US6140228A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low temperature metallization process
Assignee: Monterey Research LLC
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Filing: 1997-11-13
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Granted: 2000-10-31
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Expires: 2017-11-13
Abstract
Abstract The invention concerns a method of forming a layer of metal on a substrate and fill the via with high throughput. A layer of metal can be formed on a substrate using sequentially a cold deposition step, a slow hot deposition step and a rapid hot deposition step. The cold deposition step need only be performed for a time sufficient to deposit a seed layer of metal over the entire surface on which the metal layer is to be formed. In the slow hot deposition step, further metal is deposited at a low power allowing for surface diffusion of the deposited metal, which is then followed by a rapid hot deposition of metal under bulk diffusion conditions.
Inventors
- 👤 Ende Shan
- 👤 Gorley Lau
- 👤 Sam Geha
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 04:36
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; H10W20/042; H10W20/045; H10W20/056; H10W20/059
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
109 words
A method of forming a layer of metal on a substrate, comprising: i) deposing a seed layer of the metal on a first substrate surface, said seed layer being sufficient to cover said first substrate surface; ii) depositing a second amount of the metal on said seed layer at a substrate temperature of 300 to 420° C. and power of 100 to 800 W under conditions sufficient to provide a metal diffusion rate and a metal deposition rate sufficient to inhibit void formation in an opening having an aspect ratio of at least 2.0; and iii) depositing a third amount of metal on said second amount of the metal.
Claim 2
Independent Claim
109 words
A method of forming a layer of metal on a substrate, comprising: i) deposing a seed layer of the metal on a first substrate surface, said seed layer being sufficient to cover said first substrate surface; ii) depositing a second amount of the metal on said seed layer at a substrate temperature of 300 to 420° C. and power of 100 to 800 W under conditions sufficient to provide a metal diffusion rate and a metal deposition rate sufficient to inhibit void formation in an opening having an aspect ratio of at least 2.0; and iii) depositing a third amount of metal on said second amount of the metal.
Claim 3
Dependent Claim
12 words
The method of claim 1, wherein said substrate further comprises an opening.
Claim 4
Dependent Claim
17 words
The method of claim 2, further comprising, before step i) forming a barrier/liner layer in said opening.
Claim 5
Dependent Claim
37 words
The method of claim 3, wherein step ii) is conducted at a substrate temperature and power sufficient to inhibit formation of filamentous metal phases with said barrier/liner layer, having a resistivity greater than that of said metal.
Claim 6
Dependent Claim
22 words
The method of claim 1, wherein said second amount of metal is deposited at a rate of about 5 to 30 Å/sec.
Claim 7
Dependent Claim
21 words
The method of claim 1, wherein said second amount of metal is deposited at a pressure of 4 to 6 mtorr.
Claim 8
Dependent Claim
24 words
The method as in claim 1, wherein said second amount of metal is deposited to form a layer of 400 to 3,000 Å thick.
Claim 9
Dependent Claim
11 words
The method as in claim 1, wherein said metal is aluminum.
Claim 10
Dependent Claim
17 words
The method as in claim 1, said seed layer is deposited at a power of 9,000 W.
Claim 11
Dependent Claim
19 words
The method of claim 1, wherein said seed layer is deposited at a pressure of 1 to 3 mtorr.
Claim 12
Dependent Claim
19 words
The method of claim 1, wherein said seed layer is deposited at a rate of 100 to 300 Å/sec.
Claim 13
Dependent Claim
20 words
The method of claim 1, wherein said seed layer is deposited to form a layer of 500 to 4,000 Å.
Claim 14
Dependent Claim
17 words
The method of claim 1, wherein step ii) further comprises heating said substrate by backside gas flow.
Claim 15
Dependent Claim
10 words
The method of claim 13, wherein said gas is Ar.
Claim 16
Dependent Claim
17 words
The method of claim 2, wherein said opening has an aspect ratio of at least 3:1 (H/W).
Claim 17
Dependent Claim
18 words
The method of claim 2, wherein said second amount of metal deposited is sufficient to fill said opening.
Claim 18
Dependent Claim
17 words
The method of claim 2, further comprising forming a liner/wetting layer in said opening before step i).
Claim 19
Dependent Claim
17 words
The method of claim 2, wherein said opening has an aspect ratio of at least 2.5 (H/W).
Claim 20
Dependent Claim
105 words
A metallization layer formed by a process comprising: i) deposing a seed layer of the metal on a first substrate surface, said seed layer being sufficient to cover said first substrate surface; ii) depositing a second amount of the metal on said seed layer at a substrate temperature of 300 to 420° C. and power of 100 to 800 W under conditions sufficient to provide a metal diffusion rate and a metal deposition rate sufficient to inhibit void formation in an opening having an aspect ratio of at least 2.0; and iii) depositing a third amount of metal on said second amount of the metal.
Claim 21
Dependent Claim
105 words
A metallization layer formed by a process comprising: i) deposing a seed layer of the metal on a first substrate surface, said seed layer being sufficient to cover said first substrate surface; ii) depositing a second amount of the metal on said seed layer at a substrate temperature of 300 to 420° C. and power of 100 to 800 W under conditions sufficient to provide a metal diffusion rate and a metal deposition rate sufficient to inhibit void formation in an opening having an aspect ratio of at least 2.0; and iii) depositing a third amount of metal on said second amount of the metal.
Claim 22
Dependent Claim
25 words
The method of claim 1, wherein said second amount of metal is deposited at a power of at least 100 to less than 400 W.
Claim 23
Dependent Claim
25 words
The method of claim 3, wherein said barrier/liner layer comprises a material selected from the group consisting of titanium, a titanium-tungsten alloy or titanium nitride.
Claim 24
Independent Claim
124 words
A method of forming a layer of metal on a substrate, comprising: i) depositing a seed layer comprising aluminum on a barrier/liner layer comprising titanium in a first substrate opening having an aspect ratio of at least 2.0, said seed layer being sufficient to cover said first substrate surface within said opening; ii) depositing an amount of metal comprising aluminum on said seed layer at a substrate temperature of 300 to 420° C. and power of 100 to 800 W, under conditions sufficient to provide a diffusion rate and a deposition rate sufficient to inhibit void formation in an opening having an aspect ratio of at least 2.0; and iii) depositing a second amount of said metal on said first amount of said metal.
Claim 25
Independent Claim
124 words
A method of forming a layer of metal on a substrate, comprising: i) depositing a seed layer comprising aluminum on a barrier/liner layer comprising titanium in a first substrate opening having an aspect ratio of at least 2.0, said seed layer being sufficient to cover said first substrate surface within said opening; ii) depositing an amount of metal comprising aluminum on said seed layer at a substrate temperature of 300 to 420° C. and power of 100 to 800 W, under conditions sufficient to provide a diffusion rate and a deposition rate sufficient to inhibit void formation in an opening having an aspect ratio of at least 2.0; and iii) depositing a second amount of said metal on said first amount of said metal.
Claim 26
Dependent Claim
25 words
The method of claim 22, wherein said barrier/liner layer comprises a material selected from the group consisting of titanium, a titanium-tungsten alloy or titanium nitride.
Claim 27
Dependent Claim
33 words
The method of claim 1, wherein said second amount of the metal is deposited under conditions which inhibit the formation of filamentous metal phases having a resistivity greater than that of said metal.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-31 | 2004-05-01 | 2004-10-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-31 | 2008-05-01 | 2008-10-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-31 | 2012-05-01 | 2012-10-31 | $7700.00 | Window Closed / Lapsed |