US5600182A
Expired / Lapsed
US
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Barrier metal technology for tungsten plug interconnection
Assignee: Bell Semiconductor LLC
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Filing: 1995-01-24
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Granted: 1997-02-04
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Expires: 2015-01-24
Abstract
Abstract A method for producing a relatively thin titanium nitride barrier layer in an integrated circuit is presented. The titanium nitride layer may be utilized in a tungsten plug interconnection by providing a semiconductor wafer with a conducting layer covered by an insulating layer. The insulating layer is patterned and etched to form contact holes or vias. A layer of titanium is deposited on the surface of the wafer including the sidewalls and bottom of the via. A relatively thin titanium nitride layer is then formed on the titanium layer. The formation of the titanium nitride layer includes growing titanium nitride by a reaction of a nitrogen-bearing species with the titanium layer. The titanium nitride layer prevents the underlying titanium layer from reacting with the subsequent tungsten layer which is deposited on the wafer to fill the via. The tungsten layer is then etched so that the tungsten remaining forms a plug interconnection between conducting layers.
Inventors
- 👤 Richard D. Schinella
- 👤 Gobi R. Padmanabhan
- 👤 Joseph M. Zelayeta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 07:37
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/42; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24942; Y10T428/2495; Y10T428/24967; Y10T428/24975; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265; Y10T428/31504; Y10T428/31678
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
55 words
An integrated circuit device, comprising: a first conducting layer having a top surface; a titanium layer on said first conducting layer, said titanium layer having a top surface; a titanium nitride layer in a range of 20 to 50 Angstroms thick on said titanium layer; and a second conducting layer on said titanium nitride layer.
Claim 2
Dependent Claim
55 words
An integrated circuit device, comprising: a first conducting layer having a top surface; a titanium layer on said first conducting layer, said titanium layer having a top surface; a titanium nitride layer in a range of 20 to 50 Angstroms thick on said titanium layer; and a second conducting layer on said titanium nitride layer.
Claim 3
Dependent Claim
17 words
The integrated circuit device of claim 1, wherein said titanium nitride layer is approximately 40 Angstroms thick.
Claim 4
Dependent Claim
21 words
The integrated circuit device of claim 1, wherein said titanium layer is in a range of 30 to 50 Angstroms thick.
Claim 5
Dependent Claim
25 words
The integrated circuit device of claim 1, wherein said titanium nitride layer is grown by a reaction of a nitrogen-bearing species with said titanium layer.
Claim 6
Dependent Claim
19 words
The integrated circuit of claim 1, wherein said titanium layer and said titanium nitride layer have a same thickness.
Claim 7
Dependent Claim
54 words
The integrated circuit device of claim 1, further comprising an insulating layer over said first conducting layer, said insulating layer having an opening to said top surface of said first conducting layer, said opening having side and bottom surfaces, and said titanium layer is located on said side and bottom surfaces of said opening.
Claim 8
Dependent Claim
55 words
The integrated circuit device of claim 1, further comprising an insulating layer over said titanium layer, said insulating layer having an opening to said top surface of said titanium layer, said opening having side and bottom surfaces, and said titanium nitride layer is located on said titanium layer on said bottom surface of said opening.
Claim 9
Dependent Claim
15 words
The integrated circuit of claim 1, wherein said titanium nitride layer is a single layer.
Claim 10
Dependent Claim
97 words
An interconnection in an integrated circuit device, said integrated circuit device formed within and on a semiconductor substrate, said interconnection comprising: a first conducting layer having a top surface; an insulating layer on said first conducting layer, said insulating layer having a top surface and an opening having side and bottom surfaces; a titanium layer on said first conducting layer at said bottom surface of said opening; a titanium nitride layer in a range of 20 to 50 Angstroms thick on said titanium layer; and a second conducting layer in said opening on said titanium nitride layer.
Claim 11
Dependent Claim
97 words
An interconnection in an integrated circuit device, said integrated circuit device formed within and on a semiconductor substrate, said interconnection comprising: a first conducting layer having a top surface; an insulating layer on said first conducting layer, said insulating layer having a top surface and an opening having side and bottom surfaces; a titanium layer on said first conducting layer at said bottom surface of said opening; a titanium nitride layer in a range of 20 to 50 Angstroms thick on said titanium layer; and a second conducting layer in said opening on said titanium nitride layer.
Claim 12
Dependent Claim
15 words
The interconnection of claim 9, wherein said titanium nitride layer is approximately 40 Angstroms thick.
Claim 13
Dependent Claim
19 words
The interconnection of claim 9, wherein said titanium layer is in a range of 30 to 50 Angstroms thick.
Claim 14
Dependent Claim
23 words
The interconnection of claim 9, wherein said titanium nitride layer is grown by a reaction of a nitrogen-bearing species with said titanium layer.
Claim 15
Dependent Claim
18 words
The interconnection of claim 9, wherein said titanium layer and said titanium nitride layer have a same thickness.
Claim 16
Dependent Claim
18 words
The interconnection of claim 9, wherein said titanium layer is on said top surface of said insulating layer.
Claim 17
Dependent Claim
12 words
The interconnection of claim 9, wherein said second conducting layer is tungsten.
Claim 18
Dependent Claim
14 words
The interconnection of claim 9, wherein said titanium nitride layer is a single layer.
Claim 19
Dependent Claim
19 words
The interconnection of claim 9, wherein said titanium layer is in a range of 30 to 700 Angstroms thick.
Claim 20
Dependent Claim
94 words
An interconnection in an integrated circuit device, said integrated circuit device formed within and on a semiconductor substrate, said interconnection comprising: a first conducting layer having a top surface; an insulating layer on said first conducting layer, said insulating layer having a top surface and an opening having side and bottom surfaces; a titanium layer on said side and bottom surfaces of said opening; a titanium nitride layer in a range of 20 to 200 Angstroms thick on said titanium layer; and a second conducting layer in said opening on said titanium nitride layer.
Claim 21
Dependent Claim
94 words
An interconnection in an integrated circuit device, said integrated circuit device formed within and on a semiconductor substrate, said interconnection comprising: a first conducting layer having a top surface; an insulating layer on said first conducting layer, said insulating layer having a top surface and an opening having side and bottom surfaces; a titanium layer on said side and bottom surfaces of said opening; a titanium nitride layer in a range of 20 to 200 Angstroms thick on said titanium layer; and a second conducting layer in said opening on said titanium nitride layer.
Claim 22
Dependent Claim
15 words
The interconnection of claim 18, wherein said titanium nitride layer is approximately 40 Angstroms thick.
Claim 23
Dependent Claim
15 words
The interconnection of claim 18, wherein said titanium nitride layer is approximately 100 Angstroms thick.
Claim 24
Dependent Claim
14 words
The interconnection of claim 17, wherein said titanium layer is approximately 100 Angstroms thick.
Claim 25
Dependent Claim
23 words
The interconnection of claim 18, wherein said titanium nitride layer is grown by a reaction of a nitrogen-bearing species with said titanium layer.
Claim 26
Dependent Claim
18 words
The interconnection of claim 18, wherein said titanium layer and said titanium nitride layer have a same thickness.
Claim 27
Dependent Claim
18 words
The interconnection of claim 18, wherein said titanium layer is on said top surface of said insulating layer.
Claim 28
Dependent Claim
12 words
The interconnection of claim 18, wherein said second conducting layer is tungsten.
Claim 29
Dependent Claim
14 words
The interconnection of claim 18, wherein said titanium nitride layer is a single layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-02-04 | 2000-08-05 | 2001-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-04 | 2004-08-05 | 2005-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-04 | 2008-08-05 | 2009-02-04 | $7700.00 | Window Closed / Lapsed |