US5227335A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Tungsten metallization
Assignee: Agere Systems LLC
•
Filing: 1990-04-30
•
Granted: 1993-07-13
•
Expires: 2010-04-30
Abstract
Abstract The adhesion of tungsten to an underlying dielectric layer is improved by the use of a thin glue layer of either TiN or Al.
Inventors
- 👤 Lowell H. Holschwandner
- 👤 Virendra V. S. Rana
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:39
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10P; H10P14/00; H10P14/40; H10P14/412
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
85 words
A method of fabricating an integrated circuit comprising the steps of: patterning a dielectric layer to form holes which expose the underlying material, said exposed underlying material comprises an electrically conducting material; depositing a glue layer covering said dielectric and said exposed underlying material; depositing a tungsten layer by chemical vapor deposition, said tungsten layer covering said glue layer on said dielectric and said exposed material; CHARACTERIZED IN THAT said glue layer comprises at least one member selected from the group consisting of conducting nitrides.
Claim 2
Independent Claim
85 words
A method of fabricating an integrated circuit comprising the steps of: patterning a dielectric layer to form holes which expose the underlying material, said exposed underlying material comprises an electrically conducting material; depositing a glue layer covering said dielectric and said exposed underlying material; depositing a tungsten layer by chemical vapor deposition, said tungsten layer covering said glue layer on said dielectric and said exposed material; CHARACTERIZED IN THAT said glue layer comprises at least one member selected from the group consisting of conducting nitrides.
Claim 3
Dependent Claim
15 words
A method as recited in claim 1 in which said material comprises said silicon surface.
Claim 4
Dependent Claim
15 words
A method as recited in claim 1 in which said material comprises a metallic silicide.
Claim 5
Dependent Claim
38 words
A method as recited in claim 1 further comprising etching said tungsten and said glue layer to form a planar surface of said dielectric and said tungsten in said hole, said tungsten being etched before said glue layer.
Claim 6
Dependent Claim
16 words
A method as recited in claim 4 in which said conducting nitride consists essentially of TiN.
Claim 7
Dependent Claim
14 words
A method as recited in claim 1 in which said dielectric comprises silicon dioxide.
Claim 8
Dependent Claim
20 words
A method as recited in claim 1 in which said W layer is deposited by low pressure chemical vapor deposition.
Claim 9
Dependent Claim
18 words
A method as recited in claim 7 in which said deposition uses WF 6 and H 2 .
Claim 10
Dependent Claim
16 words
A method as recited in claim 8 in which said glue layer comprises a conducting nutride.
Claim 11
Dependent Claim
14 words
A method as recited in claim 8 in which said conducting nitride comprises TiN.
Claim 12
Dependent Claim
19 words
A method as recited in claim 1 further comprising the step of patterning said tungsten and said glue layer.
References Cited (Backward Citations)
DE1955716A1
Cited
US3697343A
Cited
US4394678A
Cited
JPS57211269A
Cited
US4650696A
Cited
US4666737A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-12 | 1997-01-11 | 1997-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-12 | 2001-01-11 | 2001-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-12 | 2005-01-11 | 2005-07-13 | $7700.00 | Window Closed / Lapsed |