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US6429086B1
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US
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Method of depositing tungsten nitride using a source gas comprising silicon
Assignee: Micron Technology Inc
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Filing: 1997-11-25
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Granted: 2002-08-06
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Expires: 2017-11-25
Abstract
Abstract A method for depositing tungsten nitride uses a source gas mixture having a silicon based gas for depositing the tungsten nitride to overlie a deposition substrate. A non-planar storage capacitor has a tungsten nitride capacitor electrode.
Inventors
- 👤 Scott Meikle
- 👤 Trung Doan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:47
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10W20/056
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
86 words
A method of fabricating an electrode of an integrated circuit non-planar capacitor, the method comprising: forming a layer of dielectric material; providing a source gas for use in a chemical vapor deposition process, wherein the source gas includes a source of tungsten, a silicon-containing gas and a nitrogen containing gas; and depositing a layer of tungsten nitride to form an electrode of the non-planar capacitor. 2 .The method of claim 1 wherein the nitrogen containing gas is ammonia and the source of tungsten is tungsten hexaflouride.
Claim 2
Dependent Claim
17 words
The method of claim 1 wherein the source of tungsten is either tungsten hexaflouride or tungsten carbonyl.
Claim 3
Dependent Claim
26 words
The method of claim 1 wherein the non-planar capacitor further includes a polysilicon second electrode separated from the tungsten nitride electrode by the layer of dielectric.
Claim 4
Dependent Claim
18 words
The method of claim 1 wherein the electrode formed from tungsten nitride is deposited on the dielectric layer.
Claim 5
Dependent Claim
12 words
The method of claim 1 wherein the dielectric layer includes tantalum oxide.
Claim 6
Dependent Claim
21 words
The method of claim 1 wherein the capacitor is selected from the group comprising a stacked capacitor and a trench capacitor.
Claim 7
Independent Claim
82 words
A method of fabricating an electrode of an integrated circuit non-planar capacitor, the method comprising: forming a polysilicon bottom capacitor electrode; forming a dielectric layer on top of the bottom electrode; providing a source gas for use in a chemical vapor deposition process, wherein the source gas includes a source of tungsten, a silicon-containing gas and a nitrogen containing gas; and depositing a layer of tungsten nitride on top of the dielectric layer to form a top electrode of the non-planar capacitor.
Claim 8
Independent Claim
82 words
A method of fabricating an electrode of an integrated circuit non-planar capacitor, the method comprising: forming a polysilicon bottom capacitor electrode; forming a dielectric layer on top of the bottom electrode; providing a source gas for use in a chemical vapor deposition process, wherein the source gas includes a source of tungsten, a silicon-containing gas and a nitrogen containing gas; and depositing a layer of tungsten nitride on top of the dielectric layer to form a top electrode of the non-planar capacitor.
Claim 9
Dependent Claim
20 words
The method of claim 8 wherein the nitrogen containing gas is ammonia and the source of tungsten is tungsten hexaflouride.
Claim 10
Dependent Claim
12 words
The method of claim 8 wherein the dielectric layer comprises tantalum oxide.
Claim 11
Independent Claim
80 words
A method of fabricating an electrode of an integrated circuit non-planar capacitor, the method comprising: providing a source gas for use in a chemical vapor deposition process, wherein the source gas includes a source of tungsten, a silicon-containing gas and a nitrogen containing gas; depositing a layer of tungsten nitride to form a bottom electrode of the non-planar capacitor; forming a dielectric layer on top of the bottom electrode; and forming a top polysilicon capacitor electrode on the dielectric layer.
Claim 12
Independent Claim
80 words
A method of fabricating an electrode of an integrated circuit non-planar capacitor, the method comprising: providing a source gas for use in a chemical vapor deposition process, wherein the source gas includes a source of tungsten, a silicon-containing gas and a nitrogen containing gas; depositing a layer of tungsten nitride to form a bottom electrode of the non-planar capacitor; forming a dielectric layer on top of the bottom electrode; and forming a top polysilicon capacitor electrode on the dielectric layer.
Claim 13
Dependent Claim
20 words
The method of claim 11 wherein the nitrogen containing gas is ammonia and the source of tungsten is tungsten hexaflouride.
Claim 14
Dependent Claim
12 words
The method of claim 11 wherein the dielectric layer includes tantalum oxide.
Claim 15
Independent Claim
81 words
A method of fabricating an electrode of an integrated circuit non-planar capacitor, the method comprising: forming a polysilicon bottom capacitor electrode; forming a tantalum oxide dielectric layer on top of the bottom electrode; providing a source gas for use in a chemical vapor deposition process, wherein the source gas includes a source of tungsten, a silicon-containing gas and ammonia; and depositing a layer of tungsten nitride on top of the dielectric layer to form a top electrode of the non-planar capacitor.
Claim 16
Independent Claim
81 words
A method of fabricating an electrode of an integrated circuit non-planar capacitor, the method comprising: forming a polysilicon bottom capacitor electrode; forming a tantalum oxide dielectric layer on top of the bottom electrode; providing a source gas for use in a chemical vapor deposition process, wherein the source gas includes a source of tungsten, a silicon-containing gas and ammonia; and depositing a layer of tungsten nitride on top of the dielectric layer to form a top electrode of the non-planar capacitor.
Claim 17
Independent Claim
80 words
A method of fabricating an electrode of an integrated circuit non-planar capacitor, the method comprising: providing a source gas for use in a chemical vapor deposition process, wherein the source gas includes a source of tungsten, a silicon-containing gas and ammonia; depositing a layer of tungsten nitride to form a bottom electrode of the non-planar capacitor; and forming a tantalum oxide dielectric layer on top of the bottom electrode; and forming a top polysilicon capacitor electrode on the dielectric layer.
Claim 18
Independent Claim
80 words
A method of fabricating an electrode of an integrated circuit non-planar capacitor, the method comprising: providing a source gas for use in a chemical vapor deposition process, wherein the source gas includes a source of tungsten, a silicon-containing gas and ammonia; depositing a layer of tungsten nitride to form a bottom electrode of the non-planar capacitor; and forming a tantalum oxide dielectric layer on top of the bottom electrode; and forming a top polysilicon capacitor electrode on the dielectric layer.
Claim 19
Independent Claim
97 words
A method of fabricating an electrode of an integrated circuit non-planar capacitor, the method comprising: providing a source gas for use in a chemical vapor deposition process, wherein the source gas includes a source of tungsten, a silane gas and a nitrogen containing gas; depositing a first layer of tungsten nitride to form a bottom electrode of the non-planar capacitor; forming a dielectric layer on top of the bottom electrode; providing the source gas; and depositing a second layer of tungsten nitride on top of the dielectric layer to form a top electrode of the non-planar capacitor.
Claim 20
Independent Claim
97 words
A method of fabricating an electrode of an integrated circuit non-planar capacitor, the method comprising: providing a source gas for use in a chemical vapor deposition process, wherein the source gas includes a source of tungsten, a silane gas and a nitrogen containing gas; depositing a first layer of tungsten nitride to form a bottom electrode of the non-planar capacitor; forming a dielectric layer on top of the bottom electrode; providing the source gas; and depositing a second layer of tungsten nitride on top of the dielectric layer to form a top electrode of the non-planar capacitor.
Claim 21
Dependent Claim
12 words
The method of claim 16 wherein the dielectric layer is tantalum oxide.
Claim 22
Dependent Claim
12 words
The method of claim 16 wherein the nitrogen containing gas is ammonia.
Claim 23
Independent Claim
95 words
A method of fabricating an electrode of an integrated circuit non-planar capacitor, the method comprising: providing a source gas for use in a chemical vapor deposition process, wherein the source gas includes a source of tungsten, silane-type gas and ammonia; depositing a first layer of tungsten nitride to form a bottom electrode of the non-planar capacitor; forming a tantalum oxide dielectric layer on top of the bottom electrode; providing the source gas; and depositing a second layer of tungsten nitride on top of the dielectric layer to form a top electrode of the non-planar capacitor.
Claim 24
Independent Claim
95 words
A method of fabricating an electrode of an integrated circuit non-planar capacitor, the method comprising: providing a source gas for use in a chemical vapor deposition process, wherein the source gas includes a source of tungsten, silane-type gas and ammonia; depositing a first layer of tungsten nitride to form a bottom electrode of the non-planar capacitor; forming a tantalum oxide dielectric layer on top of the bottom electrode; providing the source gas; and depositing a second layer of tungsten nitride on top of the dielectric layer to form a top electrode of the non-planar capacitor.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-08-05 | 2006-02-04 | 2006-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-08-05 | 2010-02-04 | 2010-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-08-05 | 2014-02-04 | 2014-08-06 | $7700.00 | Window Closed / Lapsed |