Patent US6350686B1 successfully refreshed from Google Patents.
US6350686B1
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Organometallic compound mixtures in chemical vapor deposition
Assignee: Micron Technology Inc
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Filing: 2000-11-07
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Granted: 2002-02-26
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Expires: 2020-11-07
Abstract
Abstract Multi-metallic films are prepared from multi-metallic mixtures of metalloamide compounds. The mixtures are subjected to vaporization to form a multi-metallic vapor having defined and controllable stoichiometry. The multi-metallic vapor is then transferred to a chemical vapor deposition chamber, with or without the presence of a reactant gas, to form the multi-metallic film. Multi-metallic nitride, oxide, sulfide, boride, silicide, germanide, phosphide, arsenide, selenide, telluride, etc. films may be prepared by appropriate choice of metalloamide compounds and reactant gas(es).
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:14
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; C23C16/44; C23C16/448
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
105 words
A process for forming an electronic device comprising the steps of: providing a multi-metallic mixture comprising first and second metalloamide compounds, where the first metalloamide compound contains a metal that is not present in the second metalloamide compound and at least one metal in the first or second metalloamide compound is a non-Group-III metal; vaporizing the multi-metallic mixture to form a multi-metallic vapor; depositing at least a portion of the multi-metallic vapor onto a substrate to form a multi-metallic layer; and utilizing the substrate having the multi-metallic layer, or a modified version thereof, as a component in an assembly, the assembly defining the electronic device.
Claim 2
Dependent Claim
105 words
A process for forming an electronic device comprising the steps of: providing a multi-metallic mixture comprising first and second metalloamide compounds, where the first metalloamide compound contains a metal that is not present in the second metalloamide compound and at least one metal in the first or second metalloamide compound is a non-Group-III metal; vaporizing the multi-metallic mixture to form a multi-metallic vapor; depositing at least a portion of the multi-metallic vapor onto a substrate to form a multi-metallic layer; and utilizing the substrate having the multi-metallic layer, or a modified version thereof, as a component in an assembly, the assembly defining the electronic device.
Claim 3
Dependent Claim
38 words
The process of claim 1 wherein each of the first and second metalloamide compounds independently has the formula M(NR 2 ) wherein M is a metal, N is nitrogen and R is independently selected from hydrogen and carbon.
Claim 4
Dependent Claim
44 words
The process of claim 1 wherein the first metalloamide compound comprises the structural unit M 1 (NR 1 R 2 ) wherein M 1 is a metal, N is nitrogen and each of R 1 and R 2 is independently selected from hydrocarbon groups.
Claim 5
Dependent Claim
13 words
The process of claim 3 wherein the hydrocarbon group is a C1-C5alkyl group.
Claim 6
Dependent Claim
44 words
The process of claim 1 wherein the second metalloamide compound comprises the structural unit M 2 (NR 3 R 4 ) wherein M 2 is a metal, N is nitrogen, and each of R 3 and R 4 is independently selected from hydrocarbon groups.
Claim 7
Dependent Claim
39 words
The process of claim 1 wherein at least two different metals selected from the group consisting of transition metals and the metals present in Groups IA, IIA, IIIA and IVA of the Periodic Table are present in the mixture.
Claim 8
Dependent Claim
23 words
The process of claim 6 wherein the group consists of transition metals and the metals present in Group IIIA of the Periodic Table.
Claim 9
Dependent Claim
12 words
The process of claim 1 wherein the mixture comprises aluminum and titanium.
Claim 10
Dependent Claim
13 words
The process of claim 1 wherein the mixture comprises a third metalloamide compound.
Claim 11
Dependent Claim
13 words
The process of claim 1 wherein the multi-metallic layer comprises a metal alloy.
Claim 12
Dependent Claim
30 words
The process of claim 1 wherein the multi-metallic layer comprises a metal compound selected from the group consisting of metal nitrides, metal oxides, metal sulfides, metal borides, and metal silicides.
Claim 13
Dependent Claim
13 words
The process of claim 1 wherein the multi-metallic layer comprises titanium aluminum nitride.
Claim 14
Dependent Claim
12 words
The process of claim 1 wherein the substrate is a semiconductor device.
Claim 15
Dependent Claim
12 words
The process of claim 1 wherein the mixture further comprises a solvent.
Claim 16
Dependent Claim
30 words
The process of claim 14 wherein the solvent is selected from the group consisting of aliphatic hydrocarbons, aromatic hydrocarbons, ethers, polyethers, thioethers, esters, ammonia, amines, polyamines, nitrites, and silicone oils.
Claim 17
Dependent Claim
14 words
The process of claim 14 wherein the solvent is an aliphatic or aromatic hydrocarbon.
Claim 18
Dependent Claim
12 words
The process of claim 1 wherein the mixture comprises tetrakis(dimethylamino)titanium and hexakis(dimethylamino)dialuminum.
Claim 19
Dependent Claim
12 words
The process of claim 1 wherein the vaporizing is by flash vaporization.
Claim 20
Dependent Claim
86 words
A process for forming a multi-metallic layer on a semiconductor device comprising the steps of: providing a multi-metallic mixture comprising first and second metalloamide compound, where the first metalloamide compound contains a metal that is not present in the second metalloamide compound and at least one metal in the first or second metalloamide compound is a non-Group-III metal; vaporizing the multi-metallic mixture to form a multi-metallic vapor; and depositing at least a portion of the multi-metallic vapor onto a semiconductor device to form a multi-metallic layer.
Claim 21
Dependent Claim
86 words
A process for forming a multi-metallic layer on a semiconductor device comprising the steps of: providing a multi-metallic mixture comprising first and second metalloamide compound, where the first metalloamide compound contains a metal that is not present in the second metalloamide compound and at least one metal in the first or second metalloamide compound is a non-Group-III metal; vaporizing the multi-metallic mixture to form a multi-metallic vapor; and depositing at least a portion of the multi-metallic vapor onto a semiconductor device to form a multi-metallic layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-02-25 | 2005-08-27 | 2006-02-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-02-25 | 2009-08-27 | 2010-02-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-02-25 | 2013-08-27 | 2014-02-26 | $7700.00 | Window Closed / Lapsed |