US5409735A
Expired / Lapsed
US
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Chemical vapor deposition of metal pnictogenide films using single source precursors
Assignee: Wayne State University
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Filing: 1994-07-21
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Granted: 1995-04-25
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Expires: 2014-07-21
Abstract
Abstract A process for depositing a film of metal pnictogenide. The process comprises providing a single source of a metal pnictogenide and heating said source to a temperature sufficient to sublime the single source at a pressure selected from a range of about 0.0001 to 760 torr so that a sublimate is delivered into a reaction zone. Within this reaction zone, a substrate is provided upon which deposition may occur. The reaction zone is heated to approximately 200°-800° C. The sublimate is passed through this reaction zone and over the substrate to produce a thin film of metal pnictogenide which is deposited upon the substrate.
Inventors
- 👤 Charles H. Winter
- 👤 T. Suren Lewkebandara
- 👤 Philip H. Sheridan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:13
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
94 words
A CVD process for depositing a film of a metal pnictogenide comprising the steps of: providing a single source capable of forming the metal pnictogenide; heating the single source to a temperature sufficient to sublime the single source at a pressure of about 0.0001 to 760 torr so that a sublimate is delivered into a reaction zone; providing a substrate within the reaction zone; heating the reaction zone to a temperature of about 200-800 degrees C; and passing the sublimate over the substrate to deposit a film of the metal pnictogenide on the substrate.
Claim 2
Dependent Claim
94 words
A CVD process for depositing a film of a metal pnictogenide comprising the steps of: providing a single source capable of forming the metal pnictogenide; heating the single source to a temperature sufficient to sublime the single source at a pressure of about 0.0001 to 760 torr so that a sublimate is delivered into a reaction zone; providing a substrate within the reaction zone; heating the reaction zone to a temperature of about 200-800 degrees C; and passing the sublimate over the substrate to deposit a film of the metal pnictogenide on the substrate.
Claim 3
Dependent Claim
85 words
The process of claim 1 wherein the step of providing a single source comprises providing the reaction product of MX n and a reactant selected from the group consisting of NH 3 , NHR 2 , NR 3 and mixtures thereof, wherein M is selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W, n is a number from 3 to 6, X is a halide, and R is a substituent group containing from 1 to 18 carbon atoms.
Claim 4
Dependent Claim
63 words
The process of claim 2 wherein the step of providing a single source comprises providing the reaction product of TiX 4 and a reactant selected from the group consisting of NH 3 , NHR 2 , NR 3 and mixtures thereof, wherein X is a halide, and R is a substituent selected from the group consisting of a primary, secondary, or tertiary butyl.
Claim 5
Dependent Claim
25 words
The process of claim 3 wherein the step of providing a single source comprises providing a reaction product of TiCl 4 and NH 3 .
Claim 6
Dependent Claim
28 words
The process of claim 4 wherein the step of providing a single source comprises providing the single source having the formula TiCl 4 (NH 3 ) 2 .
Claim 7
Dependent Claim
28 words
The process of claim 4 wherein the step of providing a single source comprises providing the single source having the formula TiCl 4 (NH 3 ) 4 .
Claim 8
Dependent Claim
47 words
The process of claim 3 wherein the step of providing the single source comprises providing a reaction product of TiCl 4 and NHR 2 wherein R is an alkyl group selected from the group consisting of C n H 2n+1 wherein n is from 1 to 5.
Claim 9
Dependent Claim
35 words
The process of claim 7 wherein the step of providing the single source comprises providing [TiCl 4 (NH(CH 2 CH 3 ) 2 ) 2 .(NH(CH 2 CH 3 ) 2 ) 0 .33 ].
Claim 10
Dependent Claim
26 words
The process of claim 7 wherein the step of providing the single source comprises providing [TiCl 4 (NH((CH 3 ) 2 CH) 2 ) 2 ].
Claim 11
Dependent Claim
32 words
The process of claim 1 wherein the step of heating the single source comprises heating the single source to a temperature selected from a range of about 80 to 100 degrees C.
Claim 12
Dependent Claim
28 words
The process of claim 10 wherein the step of heating the single source is performed at a pressure selected from a range of about 0.01 to 1.0 torr.
Claim 13
Dependent Claim
26 words
The process of claim 1 wherein the step of providing a substrate comprises providing a substrate selected from the group consisting of silicon, glass and steel.
Claim 14
Dependent Claim
32 words
The process of claim 1 wherein the step of heating the reaction zone comprises heating the reaction zone to a temperature selected from a range of about 400 to 800 degrees C.
Claim 15
Dependent Claim
38 words
The process of claim 1 wherein the step of passing the sublimate over the substrate further comprises passing the sublimate over the substrate so as to deposit a metal pnictogenide film from 100 Angstroms to 5 microns thick.
Claim 16
Dependent Claim
28 words
The process of claim 1, wherein the single source is TiCl 4 (NH 3 ) 2 and the metal pnictogenide of which the film is composed is TiN.
Claim 17
Dependent Claim
163 words
A CVD process for depositing a film of a metal pnictogenide comprising the steps of: providing a single source which is the reaction product of MX n and a reactant selected from the group consisting of NH 3 , NHR 2 , NR 3 and mixtures thereof, wherein M is selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W, n is a number from 3 to 6, X is a halide, and R is a substituent selected from the group consisting of a primary, secondary, or tertiary butyl; heating the single source to a temperature of about 80-100 degrees C at a pressure of about 0.01 to 1.0 torr so that a sublimate is delivered into a reaction zone; providing a substrate within the reaction zone; heating the reaction zone to a temperature of about 400-800 degrees C; and passing the sublimate over the substrate to deposit a film of the metal pnictogenide on the substrate.
Claim 18
Dependent Claim
163 words
A CVD process for depositing a film of a metal pnictogenide comprising the steps of: providing a single source which is the reaction product of MX n and a reactant selected from the group consisting of NH 3 , NHR 2 , NR 3 and mixtures thereof, wherein M is selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W, n is a number from 3 to 6, X is a halide, and R is a substituent selected from the group consisting of a primary, secondary, or tertiary butyl; heating the single source to a temperature of about 80-100 degrees C at a pressure of about 0.01 to 1.0 torr so that a sublimate is delivered into a reaction zone; providing a substrate within the reaction zone; heating the reaction zone to a temperature of about 400-800 degrees C; and passing the sublimate over the substrate to deposit a film of the metal pnictogenide on the substrate.
Claim 19
Dependent Claim
108 words
A CVD process for depositing a film of titanium nitride comprising the steps of: providing a single source capable of forming titanium nitride; heating the single source to a temperature of about 80-100 degrees C so as to sublime the single source at a pressure of about 0.01 to 1.0 torr so that a sublimate is delivered into a reaction zone; providing a substrate within the reaction zone; heating the reaction zone to a temperature of about 400 to 800 degrees C; and passing the sublimate over the substrate so as to deposit on the substrate a film of titanium nitride from 100 Angstroms to 5 microns thick.
Claim 20
Dependent Claim
108 words
A CVD process for depositing a film of titanium nitride comprising the steps of: providing a single source capable of forming titanium nitride; heating the single source to a temperature of about 80-100 degrees C so as to sublime the single source at a pressure of about 0.01 to 1.0 torr so that a sublimate is delivered into a reaction zone; providing a substrate within the reaction zone; heating the reaction zone to a temperature of about 400 to 800 degrees C; and passing the sublimate over the substrate so as to deposit on the substrate a film of titanium nitride from 100 Angstroms to 5 microns thick.
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