US6150706A
Expired / Lapsed
US
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Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
Assignee: Round Rock Research LLC
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Filing: 1998-02-27
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Granted: 2000-11-21
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Expires: 2018-02-27
Abstract
Abstract A semiconductor structure includes a dielectric layer having first and second opposing sides. A conductive layer is adjacent to the first side of the dielectric layer and is coupled to a first terminal, and a conductive barrier layer is adjacent to the second side of the dielectric layer and is coupled to a second terminal. The conductive barrier layer may be formed from tungsten nitride, tungsten silicon nitride, titanium silicon nitride or other barrier materials.
Inventors
- 👤 Randhir P. S. Thakur
- 👤 Garry A. Mercaldi
- 👤 Michael Nuttall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:00
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/404; G11C17/00; G11C17/14; G11C17/16; H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10P; H10P14/00; H10P14/40; H10P14/418; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/065
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
86 words
A capacitor, comprising: a silicon nitride dielectric having first and second opposite sides; a first semi-conductive electrode having a layer of silicon germanium having a first side adjacent to the first side of the silicon nitride dielectric and a second side adjacent to a layer of polysilicon; a first conductive barrier layer having a first side adjacent to the second side of the silicon nitride dielectric and having a second opposing side; and a second electrode adjacent to the second side of the first barrier layer.
Claim 2
Dependent Claim
86 words
A capacitor, comprising: a silicon nitride dielectric having first and second opposite sides; a first semi-conductive electrode having a layer of silicon germanium having a first side adjacent to the first side of the silicon nitride dielectric and a second side adjacent to a layer of polysilicon; a first conductive barrier layer having a first side adjacent to the second side of the silicon nitride dielectric and having a second opposing side; and a second electrode adjacent to the second side of the first barrier layer.
Claim 3
Dependent Claim
27 words
The capacitor of claim 1, further comprising a second conductive barrier layer disposed between the first semi-conductive electrode and the first side of the silicon nitride dielectric.
Claim 4
Dependent Claim
11 words
The capacitor of claim 1 wherein the second electrode comprises polysilicon.
Claim 5
Dependent Claim
12 words
The capacitor of claim 1 wherein the second electrode comprises silicon germanium.
Claim 6
Dependent Claim
14 words
The capacitor of claim 1 wherein the first conductive barrier layer comprises tungsten nitride.
Claim 7
Dependent Claim
15 words
The capacitor of claim 1 wherein the first conductive barrier layer comprises tungsten silicon nitride.
Claim 8
Dependent Claim
15 words
The capacitor of claim 1 wherein the first conductive barrier layer comprises titanium silicon nitride.
Claim 9
Dependent Claim
12 words
The capacitor of claim 1 wherein the second electrode comprises hemispherical-silicon-grain polysilicon.
Claim 10
Dependent Claim
21 words
The capacitor of claim 1 wherein a silicide layer is disposed between the first conductive barrier layer and the second electrode.
Claim 11
Dependent Claim
106 words
A capacitor, comprising: a silicon nitride dielectric having first and second opposite sides; a first semi-conductive electrode adjacent to the first side of the silicon nitride dielectric; a first conductive barrier layer having a first side adjacent to the second side of the silicon nitride dielectric and having a second opposing side; and a second electrode having a layer of silicon germanium having a first side that is adjacent to the second side of the first barrier layer and having a second opposite side, the second electrode further having a layer of polysilicon that is adjacent to the second side of the layer of silicon germanium.
Claim 12
Dependent Claim
106 words
A capacitor, comprising: a silicon nitride dielectric having first and second opposite sides; a first semi-conductive electrode adjacent to the first side of the silicon nitride dielectric; a first conductive barrier layer having a first side adjacent to the second side of the silicon nitride dielectric and having a second opposing side; and a second electrode having a layer of silicon germanium having a first side that is adjacent to the second side of the first barrier layer and having a second opposite side, the second electrode further having a layer of polysilicon that is adjacent to the second side of the layer of silicon germanium.
Claim 13
Dependent Claim
27 words
The capacitor of claim 10, further comprising a second conductive barrier layer disposed between the first semi-conductive electrode and the first side of the silicon nitride dielectric.
Claim 14
Dependent Claim
12 words
The capacitor of claim 10 wherein the first semi-conductive electrode comprises polysilicon.
Claim 15
Dependent Claim
13 words
The capacitor of claim 10 wherein the first semi-conductive electrode comprises silicon germanium.
Claim 16
Dependent Claim
56 words
The capacitor of claim 10 wherein the first semi-conductive electrode comprises: a layer of silicon germanium having a first side that is adjacent to the first side of the silicon nitride dielectric and having a second opposite side; and a layer of polysilicon that is adjacent to the second side of the layer of silicon germanium.
Claim 17
Dependent Claim
14 words
The capacitor of claim 10 wherein the first conductive barrier layer comprises tungsten nitride.
Claim 18
Dependent Claim
15 words
The capacitor of claim 10 wherein the first conductive barrier layer comprises tungsten silicon nitride.
Claim 19
Dependent Claim
15 words
The capacitor of claim 10 wherein the first conductive barrier layer comprises titanium silicon nitride.
Claim 20
Dependent Claim
20 words
The capacitor of claim 10 wherein a silicide layer is disposed between the conductive barrier layer and the second electrode.
Claim 21
Dependent Claim
84 words
A capacitor, comprising: a silicon nitride dielectric having first and second opposite sides; a first semiconductor electrode having a layer of silicon germanium having a first side adjacent to the first side of the dielectric and a second side adjacent to a layer of polysilicon; a first tungsten nitride barrier layer having a first side adjacent to the second side of the dielectric and having a second opposing side; and a second semiconductor electrode adjacent to the second side of the first barrier layer.
Claim 22
Dependent Claim
84 words
A capacitor, comprising: a silicon nitride dielectric having first and second opposite sides; a first semiconductor electrode having a layer of silicon germanium having a first side adjacent to the first side of the dielectric and a second side adjacent to a layer of polysilicon; a first tungsten nitride barrier layer having a first side adjacent to the second side of the dielectric and having a second opposing side; and a second semiconductor electrode adjacent to the second side of the first barrier layer.
Claim 23
Dependent Claim
25 words
The capacitor of claim 19, further comprising a second tungsten nitride barrier layer disposed between the first electrode and the first side of the dielectric.
Claim 24
Dependent Claim
12 words
The capacitor of claim 19 wherein the second semiconductor electrode comprises polysilicon.
Claim 25
Dependent Claim
13 words
The capacitor of claim 19 wherein the second semiconductor electrode comprises silicon germanium.
Claim 26
Dependent Claim
13 words
The capacitor of claim 19 wherein the second semiconductor electrode comprises hemispherical-silicon-grain polysilicon.
Claim 27
Dependent Claim
23 words
The capacitor of claim 19 wherein a silicide layer is disposed between the first tungsten nitride barrier layer and the second semiconductor electrode.
Claim 28
Dependent Claim
105 words
A capacitor, comprising: a silicon nitride dielectric having first and second opposite sides; a first semiconductor electrode adjacent to the first side of the dielectric; a first tungsten nitride barrier layer having a first side adjacent to the second side of the dielectric and having a second opposing side; and a second semiconductor electrode having a layer of silicon germanium having a first side that is adjacent to the second side of the first barrier layer and having a second opposite side, the second semiconductor electrode further having a layer of polysilicon that is adjacent to the second side of the layer of silicon germanium.
Claim 29
Dependent Claim
105 words
A capacitor, comprising: a silicon nitride dielectric having first and second opposite sides; a first semiconductor electrode adjacent to the first side of the dielectric; a first tungsten nitride barrier layer having a first side adjacent to the second side of the dielectric and having a second opposing side; and a second semiconductor electrode having a layer of silicon germanium having a first side that is adjacent to the second side of the first barrier layer and having a second opposite side, the second semiconductor electrode further having a layer of polysilicon that is adjacent to the second side of the layer of silicon germanium.
Claim 30
Dependent Claim
12 words
The capacitor of claim 25 wherein the first semiconductor electrode comprises polysilicon.
Claim 31
Dependent Claim
13 words
The capacitor of claim 25 wherein the first semiconductor electrode comprises silicon germanium.
Claim 32
Dependent Claim
54 words
The capacitor of claim 25 wherein the first semiconductor electrode comprises: a layer of silicon germanium having a first side that is adjacent to the first side of the dielectric and having a second opposite side; and a layer of polysilicon that is adjacent to the second side of the layer of silicon germanium.
Claim 33
Dependent Claim
23 words
The capacitor of claim 25 wherein a silicide layer is disposed between the first tungsten nitride barrier layer and the second semiconductor electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-21 | 2004-05-22 | 2004-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-21 | 2008-05-22 | 2008-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-21 | 2012-05-22 | 2012-11-21 | $7700.00 | Window Closed / Lapsed |