US5804479A
Expired / Lapsed
US
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Method for forming semiconductor integrated circuit device having a capacitor
Assignee: Hitachi Ltd
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Filing: 1996-08-09
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Granted: 1998-09-08
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Expires: 2016-08-09
Abstract
Abstract The etch-back amount of a silicon oxide film of a memory array which is a higher altitude portion is increased when etching back and flattening the silicon oxide film by arranging a first-layer wiring on a BPSG film covering an upper electrode of an information-storing capacitative element only in a peripheral circuit but not arranging it in the memory array. Thus, a DRAM having a stacked capacitor structure is obtained such that the level difference between the memory array and peripheral circuit is decreased, and the formation of wiring and connection holes are easy.
Inventors
- 👤 Hideo Aoki
- 👤 Jun Murata
- 👤 Yoshitaka Tadaki
- 👤 Toshihiro Sekiguchi
- 👤 Keizo Kawakita
- 👤 Takashi Hayakawa
- 👤 Katsutoshi Matsunaga
- 👤 Kazuhiko Saitoh
- 👤 Michio Nishimura
- 👤 Minoru Ohtsuka
- 👤 Katsuo Yuhara
- 👤 Michio Tanaka
- 👤 Yuji Ezaki
- 👤 Toshiyuki Kaeriyama
- 👤 Songsu Cho
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:28
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/09; H10B12/30; H10B12/48; H10B12/482
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
196 words
A method of fabricating a semiconductor integrated circuit device having a DRAM provided with a memory cell constituted by arranging a bit line over the gate electrode of a memory-cell-selecting MISFET formed on a semiconductor substrate and an information-storing capacitative element on the bit line, the method comprising the steps of: (a) forming a memory-cell-selecting MISFET and a MISFET of a peripheral circuit on a semiconductor substrate and thereafter forming a bit line over the gate electrode of the memory-cell-selecting MISFET; (b) forming an information-storing capacitative element over the bit line and thereafter depositing a first insulating film covering the information-storing capacitative element; (c) forming a first-layer wiring on the first insulating film only over the peripheral circuit and thereafter depositing a second insulating film covering the first-layer wiring; (d) etching back the second insulating film over the information-storing capacitative element; (e) applying a spin-on-glass film onto the second insulating film and then depositing a third insulating film on the spin-on-glass film; and (f) forming a second-layer wiring on the third insulating film over the information-storing capacitative element and moreover forming a second-layer wiring on the third insulating film over the MISFET of the peripheral circuit.
Claim 2
Independent Claim
196 words
A method of fabricating a semiconductor integrated circuit device having a DRAM provided with a memory cell constituted by arranging a bit line over the gate electrode of a memory-cell-selecting MISFET formed on a semiconductor substrate and an information-storing capacitative element on the bit line, the method comprising the steps of: (a) forming a memory-cell-selecting MISFET and a MISFET of a peripheral circuit on a semiconductor substrate and thereafter forming a bit line over the gate electrode of the memory-cell-selecting MISFET; (b) forming an information-storing capacitative element over the bit line and thereafter depositing a first insulating film covering the information-storing capacitative element; (c) forming a first-layer wiring on the first insulating film only over the peripheral circuit and thereafter depositing a second insulating film covering the first-layer wiring; (d) etching back the second insulating film over the information-storing capacitative element; (e) applying a spin-on-glass film onto the second insulating film and then depositing a third insulating film on the spin-on-glass film; and (f) forming a second-layer wiring on the third insulating film over the information-storing capacitative element and moreover forming a second-layer wiring on the third insulating film over the MISFET of the peripheral circuit.
Claim 3
Dependent Claim
51 words
The method for fabricating a semiconductor integrated circuit device according to claim 1, wherein the second insulating film is etched back by using a photomask having an opening pattern formed by broadening a pattern for forming a lower electrode of the information-storing capacitative element up to approx. 0.5 to 1.5 μm.
Claim 4
Dependent Claim
23 words
The method for fabricating a semiconductor integrated circuit device according to claim 2, wherein the second insulating film is only partly etched back.
Claim 5
Dependent Claim
34 words
The method for fabricating a semiconductor integrated circuit device fabrication method according to claim 2, wherein the second insulating film and the first insulating film under the second insulating film are partly etched back.
Claim 6
Independent Claim
214 words
A method of fabricating a semiconductor integrated circuit device including a semiconductor substrate having a memory cell forming region and a peripheral circuit forming region, a memory cell having a memory-cell-selecting MISFET and an information-storing capacitative element formed in the memory cell forming region, and a plurality of peripheral-circuit MISFETs formed in the peripheral circuit forming region, the method comprising the steps of: (a) forming a plurality of memory-cell-selecting MISFETs in the memory cell forming region and a plurality of peripheral-circuit MISFETs in the peripheral circuit forming region and forming a plurality of information-storing capacitative elements over the semiconductor substrate in the memory cell forming region; (b) forming a first insulating film on the information-storing capacitative element formed in the memory cell forming region and on the peripheral-circuit MISFETs in the peripheral circuit forming region; (c) forming a plurality of first wirings on the first insulating film only in the peripheral circuit forming region; (d) forming a second insulating film in the memory cell forming region and peripheral circuit forming region; (e) removing the second insulating film in the memory cell forming region up to a predetermined thickness while masking the peripheral circuit forming region; and (f) forming a plurality of second wirings in the memory cell forming region and peripheral circuit forming region.
Claim 7
Independent Claim
214 words
A method of fabricating a semiconductor integrated circuit device including a semiconductor substrate having a memory cell forming region and a peripheral circuit forming region, a memory cell having a memory-cell-selecting MISFET and an information-storing capacitative element formed in the memory cell forming region, and a plurality of peripheral-circuit MISFETs formed in the peripheral circuit forming region, the method comprising the steps of: (a) forming a plurality of memory-cell-selecting MISFETs in the memory cell forming region and a plurality of peripheral-circuit MISFETs in the peripheral circuit forming region and forming a plurality of information-storing capacitative elements over the semiconductor substrate in the memory cell forming region; (b) forming a first insulating film on the information-storing capacitative element formed in the memory cell forming region and on the peripheral-circuit MISFETs in the peripheral circuit forming region; (c) forming a plurality of first wirings on the first insulating film only in the peripheral circuit forming region; (d) forming a second insulating film in the memory cell forming region and peripheral circuit forming region; (e) removing the second insulating film in the memory cell forming region up to a predetermined thickness while masking the peripheral circuit forming region; and (f) forming a plurality of second wirings in the memory cell forming region and peripheral circuit forming region.
Claim 8
Dependent Claim
30 words
The method for fabricating a semiconductor integrated circuit device according to claim 5, wherein the mask has a pattern for completely exposing the lower electrode of the information-storing capacitative element.
Claim 9
Dependent Claim
35 words
The method for fabricating a semiconductor integrated circuit device according to claim 5, wherein the mask is formed so as to cover the first wirings connected to the upper electrode of the information-storing capacitative element.
Claim 10
Dependent Claim
59 words
The method for fabricating a semiconductor integrated circuit device according to claim 5, wherein the step of forming a bit line electrically connected to the memory-cell-selecting MISFET is further included, the bit line is provided on the gate electrode of the memory-cell selecting MISFET, and the lower electrode of the information-storing capacitative element is superposed on the bit line.
Claim 11
Dependent Claim
36 words
The method for fabricating a semiconductor integrated circuit device according to claim 5, wherein a third insulating film is further formed in the memory cell forming region and peripheral circuit forming region after the step (e).
Claim 12
Dependent Claim
45 words
The method for fabricating a semiconductor integrated circuit device according to claim 5, wherein at the step (e), the second insulating film of the portion exposed from the mask is completely removed and the first insulating film is also removed up to a predetermined thickness.
Claim 13
Independent Claim
277 words
A method of fabricating a semiconductor integrated circuit device including a semiconductor substrate having a memory cell forming region and a peripheral circuit forming region, with each memory cell having a memory-cell-selecting MISFET and an information-storing capacitor element, having upper and lower electrodes, formed in the memory cell forming region, and with a plurality of peripheral-circuit MISFETs formed in the peripheral circuit forming region, the method comprising the steps of: (a) forming a plurality of memory-cell-selecting MISFETs in the memory cell forming region, forming the plurality of peripheral-circuit MISFETs in the peripheral circuit forming region, and forming a plurality of information-storing capacitor elements over the semiconductor substrate in the memory cell forming region; (b) forming a first insulating film over the information-storing capacitor elements formed in the memory cell forming region and over the peripheral circuit MISFETs in the peripheral circuit forming region, said first insulating film having a through-hole over one of source and drain regions of the peripheral-circuit MISFETs in the peripheral circuit forming region; (c) forming a plurality of first wirings on the first insulating film only in the peripheral circuit forming region, with first wirings being electrically connected to said one of source and drain regions of the peripheral-circuit MISFETs; (d) forming a second insulating film in the memory cell forming region and peripheral circuit forming region; (e) removing said second insulating film in the memory cell forming region while masking the peripheral circuit forming region with a mask and exposing a portion over the information-storing capacitor elements in the memory cell forming region; and (f) forming a plurality of second wirings in the memory cell forming region and peripheral circuit forming region.
Claim 14
Independent Claim
277 words
A method of fabricating a semiconductor integrated circuit device including a semiconductor substrate having a memory cell forming region and a peripheral circuit forming region, with each memory cell having a memory-cell-selecting MISFET and an information-storing capacitor element, having upper and lower electrodes, formed in the memory cell forming region, and with a plurality of peripheral-circuit MISFETs formed in the peripheral circuit forming region, the method comprising the steps of: (a) forming a plurality of memory-cell-selecting MISFETs in the memory cell forming region, forming the plurality of peripheral-circuit MISFETs in the peripheral circuit forming region, and forming a plurality of information-storing capacitor elements over the semiconductor substrate in the memory cell forming region; (b) forming a first insulating film over the information-storing capacitor elements formed in the memory cell forming region and over the peripheral circuit MISFETs in the peripheral circuit forming region, said first insulating film having a through-hole over one of source and drain regions of the peripheral-circuit MISFETs in the peripheral circuit forming region; (c) forming a plurality of first wirings on the first insulating film only in the peripheral circuit forming region, with first wirings being electrically connected to said one of source and drain regions of the peripheral-circuit MISFETs; (d) forming a second insulating film in the memory cell forming region and peripheral circuit forming region; (e) removing said second insulating film in the memory cell forming region while masking the peripheral circuit forming region with a mask and exposing a portion over the information-storing capacitor elements in the memory cell forming region; and (f) forming a plurality of second wirings in the memory cell forming region and peripheral circuit forming region.
Claim 15
Dependent Claim
29 words
A method of fabricating a semiconductor integrated circuit device according to claim 11, wherein the mask does not overlie at all the lower electrodes of the information-storing capacitor elements.
Claim 16
Dependent Claim
51 words
A method of fabricating a semiconductor integrated circuit device according to claim 11, wherein other first wirings are connected to the upper electrodes of the information-storing capacitor elements, and wherein the mask is formed so as to cover the first wirings connected to the upper electrode of the information-storing capacitor elements.
Claim 17
Dependent Claim
56 words
A method of fabricating a semiconductor integrated circuit device according to claim 11, further comprising the step of: forming a bit line electrically connected to the memory-cell-selecting MISFET, said bit line being provided over a gate electrode of the memory-cell-selecting MISFET, and the lower electrode of the information-storing capacitor element being superposed on the bit line.
Claim 18
Dependent Claim
43 words
A method of fabricating a semiconductor integrated circuit device according to claim 11, wherein said mask overlies end portions of the upper electrodes of the information-storing capacitor elements, and does not overlie end portions of the lower electrodes of the information-storing capacitor elements.
Claim 19
Independent Claim
268 words
A method of fabricating a semiconductor integrated circuit device including a semiconductor substrate having a memory cell forming region and a peripheral circuit forming region, with each memory cell having a memory-cell-selecting MISFET and an information-storing capacitor element, having upper and lower electrodes, formed in the memory cell forming region, and with a plurality of peripheral-circuit MISFETs formed in the peripheral circuit forming region, the method comprising the steps of: (a) forming a plurality of memory-cell-selecting MISFETs in the memory cell forming region, forming the plurality of peripheral-circuit MISFETs in the peripheral circuit forming region, and forming a plurality of information-storing capacitor elements over the semiconductor substrate in the memory cell forming region; (b) forming a first insulating film over the information-storing capacitor elements formed in the memory cell forming region and over the peripheral-circuit MISFETs in the peripheral circuit forming region, said first insulating film having a through-hole over one of source and drain regions of the peripheral-circuit MISFETs in the peripheral circuit forming region; (c) forming a plurality of first wirings on the first insulating film except said memory cell forming region, with first wirings being electrically connected to said one of source and drain regions of the peripheral-circuit MISFETs; (d) forming a second insulating film in the memory cell forming region and peripheral circuit forming region; (e) removing said second insulating film in the memory cell forming region using a mask which exposes a portion over said information-storing capacitor elements in the memory cell forming region; and (f) forming a plurality of second wirings in the memory cell forming region and peripheral circuit forming region.
Claim 20
Independent Claim
268 words
A method of fabricating a semiconductor integrated circuit device including a semiconductor substrate having a memory cell forming region and a peripheral circuit forming region, with each memory cell having a memory-cell-selecting MISFET and an information-storing capacitor element, having upper and lower electrodes, formed in the memory cell forming region, and with a plurality of peripheral-circuit MISFETs formed in the peripheral circuit forming region, the method comprising the steps of: (a) forming a plurality of memory-cell-selecting MISFETs in the memory cell forming region, forming the plurality of peripheral-circuit MISFETs in the peripheral circuit forming region, and forming a plurality of information-storing capacitor elements over the semiconductor substrate in the memory cell forming region; (b) forming a first insulating film over the information-storing capacitor elements formed in the memory cell forming region and over the peripheral-circuit MISFETs in the peripheral circuit forming region, said first insulating film having a through-hole over one of source and drain regions of the peripheral-circuit MISFETs in the peripheral circuit forming region; (c) forming a plurality of first wirings on the first insulating film except said memory cell forming region, with first wirings being electrically connected to said one of source and drain regions of the peripheral-circuit MISFETs; (d) forming a second insulating film in the memory cell forming region and peripheral circuit forming region; (e) removing said second insulating film in the memory cell forming region using a mask which exposes a portion over said information-storing capacitor elements in the memory cell forming region; and (f) forming a plurality of second wirings in the memory cell forming region and peripheral circuit forming region.
Claim 21
Dependent Claim
29 words
A method of fabricating a semiconductor integrated circuit device according to claim 16, wherein the mask does not overlie at all the lower electrodes of the information-storing capacitor elements.
Claim 22
Dependent Claim
51 words
A method of fabricating a semiconductor integrated circuit device according to claim 16, wherein other first wirings are connected to the upper electrodes of the information-storing capacitor elements, and wherein the mask is formed so as to cover the first wirings connected to the upper electrodes of the information-storing capacitor elements.
Claim 23
Dependent Claim
56 words
A method of fabricating a semiconductor integrated circuit device according to claim 16, further comprising the step of: forming a bit line electrically connected to the memory-cell-selecting MISFET, said bit line being provided over a gate electrode of the memory-cell-selecting MISFET, and the lower electrode of the information-storing capacitor element being superposed on the bit line.
Claim 24
Dependent Claim
43 words
A method of fabricating a semiconductor integrated circuit device according to claim 16, wherein said mask overlies end portions of the upper electrodes of the information-storing capacitor elements, and does not overlie end portions of the lower electrodes of the information-storing capacitor elements.
Claim 25
Independent Claim
240 words
A method of fabricating a semiconductor integrated circuit device including a semiconductor substrate having a memory cell forming region and a peripheral circuit forming region, with each memory cell having a memory-cell-selecting MISFET and an information-storing capacitor element, having upper and lower electrodes, formed in the memory cell forming region, and with a plurality of peripheral-circuit MISFETs formed in the peripheral circuit forming region, the method comprising the steps of: (a) forming a plurality of memory-cell-selecting MISFETs in the memory cell forming region, forming the plurality of peripheral-circuit MISFETs in the peripheral circuit forming region, and forming a plurality of information-storing capacitor elements over said the memory-cell-selecting MISFET in the memory cell forming region; (b) forming a first insulating film over the information-storing capacitor elements formed in the memory cell forming region and over the peripheral-circuit MISFETs in the peripheral circuit forming region; (c) forming first wirings over the first insulating film in the peripheral circuit forming region except in the memory cell forming region; (d) forming a second insulating film over the first insulating film in the memory cell forming region and over said first wirings in the peripheral circuit forming region; (e) etching the second insulating film in the memory cell forming region using a mask covering the peripheral circuit region and exposing the memory cell forming region; and (f) forming a plurality of second wirings in the memory cell forming region and the peripheral circuit forming region.
Claim 26
Independent Claim
240 words
A method of fabricating a semiconductor integrated circuit device including a semiconductor substrate having a memory cell forming region and a peripheral circuit forming region, with each memory cell having a memory-cell-selecting MISFET and an information-storing capacitor element, having upper and lower electrodes, formed in the memory cell forming region, and with a plurality of peripheral-circuit MISFETs formed in the peripheral circuit forming region, the method comprising the steps of: (a) forming a plurality of memory-cell-selecting MISFETs in the memory cell forming region, forming the plurality of peripheral-circuit MISFETs in the peripheral circuit forming region, and forming a plurality of information-storing capacitor elements over said the memory-cell-selecting MISFET in the memory cell forming region; (b) forming a first insulating film over the information-storing capacitor elements formed in the memory cell forming region and over the peripheral-circuit MISFETs in the peripheral circuit forming region; (c) forming first wirings over the first insulating film in the peripheral circuit forming region except in the memory cell forming region; (d) forming a second insulating film over the first insulating film in the memory cell forming region and over said first wirings in the peripheral circuit forming region; (e) etching the second insulating film in the memory cell forming region using a mask covering the peripheral circuit region and exposing the memory cell forming region; and (f) forming a plurality of second wirings in the memory cell forming region and the peripheral circuit forming region.
Claim 27
Dependent Claim
29 words
A method of fabricating a semiconductor integrated circuit device according to claim 21, wherein said mask does not overlie at all the lower electrodes of the information-storing capacitive elements.
Claim 28
Dependent Claim
51 words
A method of fabricating a semiconductor integrated circuit device according to claim 21, wherein other first wiring are connected to the upper electrodes of the information-storing capacitor elements, and wherein said mask is formed so as to cover the first wirings connected to the upper electrodes of the information-storing capacitor elements.
Claim 29
Dependent Claim
51 words
A method of fabricating a semiconductor integrated circuit device according to claim 21, further comprising the step of forming a bit line electrically connected to the memory-cell-selecting MISFET, said bit line being formed over a gate electrode of the memory-cell-selecting MISFET, and said information-storing capacitor element is over said bit line.
Claim 30
Dependent Claim
43 words
A method of fabricating a semiconductor integrated circuit device according to claim 11, wherein said mask overlies end portions of the upper electrodes of the information-storing capacitor elements, and does not overlie end portions of the lower electrodes of the information-storing capacitor elements.
References Cited (Backward Citations)
US5389558A
Cited
US5405800A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-07 | 2002-03-09 | 2002-09-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-07 | 2006-03-09 | 2006-09-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-07 | 2010-03-09 | 2010-09-08 | $7700.00 | Window Closed / Lapsed |