Method of making a semiconductor memory device with improved capacitor

Claim 1

A method of manufacturing a semiconductor device, comprising the steps of: depositing first conductive members to be connected to a semiconductor substrate in a plurality of openings formed in a first insulating film formed on a major surface of said semiconductor substrate; depositing a storage electrode film on said first insulating film; etching said storage electrode film to form a plurality of storage electrodes having shapes at positions respectively corresponding to said first conductive members; sequentially depositing a high-permittivity film and a first counter electrode on said plurality of storage electrodes having the shapes and said first insulating film; processing said high-permittivity film and said first counter electrode to form a plurality of high-permittivity films having shapes and a plurality of first conductive electrodes having shapes on said plurality of storage electrodes; burying a second insulating film between a plurality of convex multi-layered structures, said plurality of convex multi-layered structures being adjacent each other and consisting of said storage electrodes, said high-permittivity films, and said first counter electrodes, and said second insulating film having a permittivity much lower than a permittivity of each of said high-permittivity films; and forming a second counter electrode on upper surfaces of said second insulating film and said plurality of first counter electrodes so as to connect upper surfaces of said first counter electrodes exposed on a surface of said second insulating film.

Claim 2

A method of manufacturing a semiconductor device, comprising the steps of: depositing first conductive members to be connected to a semiconductor substrate in a plurality of openings formed in a first insulating film formed on a major surface of said semiconductor substrate; depositing a storage electrode film on said first insulating film; etching said storage electrode film to form a plurality of storage electrodes having shapes at positions respectively corresponding to said first conductive members; sequentially depositing a high-permittivity film and a first counter electrode on said plurality of storage electrodes having the shapes and said first insulating film; processing said high-permittivity film and said first counter electrode to form a plurality of high-permittivity films having shapes and a plurality of first conductive electrodes having shapes on said plurality of storage electrodes; burying a second insulating film between a plurality of convex multi-layered structures, said plurality of convex multi-layered structures being adjacent each other and consisting of said storage electrodes, said high-permittivity films, and said first counter electrodes, and said second insulating film having a permittivity much lower than a permittivity of each of said high-permittivity films; and forming a second counter electrode on upper surfaces of said second insulating film and said plurality of first counter electrodes so as to connect upper surfaces of said first counter electrodes exposed on a surface of said second insulating film.

Claim 3

A method of manufacturing a semiconductor device, comprising the steps of: depositing first conductive members to be connected to a semiconductor substrate in a plurality of openings formed in a first insulating film formed on a major surface of said semiconductor substrate; sequentially depositing a storage electrode film, a high-permittivity film, and a first counter electrode film on said first insulating film and said first conductive members; sequentially etching said first counter electrode film, said high-permittivity film, and said storage electrode film to form a plurality of first counter electrodes having shapes, a plurality of storage electrodes having shapes, and a plurality of high-permittivity films having shapes; burying a second insulating film between a plurality of convex multi-layered structures, said plurality of convex multi-layered structures being adjacent each other and consisting of said storage electrodes, said high-permittivity films, and said first counter electrodes, and said second insulating film having a permittivity much lower than a permittivity of each of said high-permittivity films; and forming a second counter electrode on upper surfaces of said second insulating film and said plurality of first counter electrodes so as to connect upper surfaces of said first counter electrodes exposed on a surface of said second insulating film.

Claim 4

A method of manufacturing a semiconductor device, comprising the steps of: depositing first conductive members to be connected to a semiconductor substrate in a plurality of openings formed in a first insulating film formed on a major surface of said semiconductor substrate; sequentially depositing a storage electrode film, a high-permittivity film, and a first counter electrode film on said first insulating film and said first conductive members; sequentially etching said first counter electrode film, said high-permittivity film, and said storage electrode film to form a plurality of first counter electrodes having shapes, a plurality of storage electrodes having shapes, and a plurality of high-permittivity films having shapes; burying a second insulating film between a plurality of convex multi-layered structures, said plurality of convex multi-layered structures being adjacent each other and consisting of said storage electrodes, said high-permittivity films, and said first counter electrodes, and said second insulating film having a permittivity much lower than a permittivity of each of said high-permittivity films; and forming a second counter electrode on upper surfaces of said second insulating film and said plurality of first counter electrodes so as to connect upper surfaces of said first counter electrodes exposed on a surface of said second insulating film.

Claim 5

A method of manufacturing a semiconductor device, comprising the steps of: depositing first conductive members to be connected to a semiconductor substrate in a plurality of openings formed in a first insulating film formed on a major surface of said semiconductor substrate; depositing a storage electrode film on said first insulating film; etching said storage electrode film to form a plurality of storage electrodes having shapes at positions respectively corresponding to said first conductive members; forming a high-permittivity film on said first insulating film and said plurality of storage electrodes so as to contact upper and side surfaces of said storage electrodes, and further forming a first counter electrode film on said high-permittivity film; sequentially etching said first counter electrode film and said high-permittivity film to form a plurality of high-permittivity films having shape and a plurality of first counter electrodes having shapes on said plurality of storage electrodes; burying a second insulating film between a plurality of convex multi-layered structures, said plurality of convex multi-layered structures being adjacent each other and consisting of said storage electrodes, said high-permittivity films, and said first counter electrodes, and said second insulating film having a permittivity much lower than a permittivity of each of said high-permittivity films; and forming a second counter electrode on upper surfaces of said second insulating film and said plurality of first counter electrodes so as to connect upper surfaces of said first counter electrodes exposed on a surface of said second insulating film.

Claim 6

A method of manufacturing a semiconductor device, comprising the steps of: depositing first conductive members to be connected to a semiconductor substrate in a plurality of openings formed in a first insulating film formed on a major surface of said semiconductor substrate; depositing a storage electrode film on said first insulating film; etching said storage electrode film to form a plurality of storage electrodes having shapes at positions respectively corresponding to said first conductive members; forming a high-permittivity film on said first insulating film and said plurality of storage electrodes so as to contact upper and side surfaces of said storage electrodes, and further forming a first counter electrode film on said high-permittivity film; sequentially etching said first counter electrode film and said high-permittivity film to form a plurality of high-permittivity films having shape and a plurality of first counter electrodes having shapes on said plurality of storage electrodes; burying a second insulating film between a plurality of convex multi-layered structures, said plurality of convex multi-layered structures being adjacent each other and consisting of said storage electrodes, said high-permittivity films, and said first counter electrodes, and said second insulating film having a permittivity much lower than a permittivity of each of said high-permittivity films; and forming a second counter electrode on upper surfaces of said second insulating film and said plurality of first counter electrodes so as to connect upper surfaces of said first counter electrodes exposed on a surface of said second insulating film.