US6149987A
Expired / Lapsed
US
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Method for depositing low dielectric constant oxide films
Assignee: Applied Materials Inc
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Filing: 1998-04-07
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Granted: 2000-11-21
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Expires: 2018-04-07
Abstract
Abstract A composite silicon dioxide layer with a reduced dielectric constant is formed by enhancing the surface sensitivity of a PECVD liner layer with activated oxygen. Pores form in an SACVD layer of silicon dioxide deposited from a TEOS precursor over the sensitized PECVD layer. The pores reduce the dielectric constant of the composite layer. Activated oxygen is provided to the PECVD layer in the form of ozone or an oxygen-based plasma.
Inventors
- 👤 Dung-Ching Perng
- 👤 Peter Wai-Man Lee
- 👤 Thomas E. Deacon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 07:30
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/56; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6512; H10P14/6514; H10P14/6516; H10P14/6548; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/665; H10P14/69215
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
92 words
A method for reducing a dielectric constant of a film of silicon oxide on a substrate, the method comprising: (a) forming a first layer of silicon oxide on the substrate in a chamber using a plasma-enhanced chemical vapor deposition process; (b) thereafter, enhancing a surface sensitivity of a surface of the first layer by exposing the surface to activated oxygen to form a sensitized surface; and (c) thereafter, forming a second layer of porous silicon oxide on the sensitized surface from a hydrophobic silicon source using a subatmospheric chemical vapor deposition process.
Claim 2
Independent Claim
92 words
A method for reducing a dielectric constant of a film of silicon oxide on a substrate, the method comprising: (a) forming a first layer of silicon oxide on the substrate in a chamber using a plasma-enhanced chemical vapor deposition process; (b) thereafter, enhancing a surface sensitivity of a surface of the first layer by exposing the surface to activated oxygen to form a sensitized surface; and (c) thereafter, forming a second layer of porous silicon oxide on the sensitized surface from a hydrophobic silicon source using a subatmospheric chemical vapor deposition process.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein the hydrophobic silicon source comprises tetraethylorthosilane.
Claim 4
Dependent Claim
11 words
The method of claim 1 wherein the activated oxygen comprises ozone.
Claim 5
Dependent Claim
15 words
The method of claim 1 wherein the activated oxygen is formed in an oxygen-based plasma.
Claim 6
Dependent Claim
18 words
The method of claim 4 wherein the oxygen-based plasma is maintained at a pressure above about 2 Torr.
Claim 7
Dependent Claim
27 words
The method of claim 4 wherein the oxygen-based plasma is maintained at a power level above about 5 W/square inch of a surface area of the substrate.
Claim 8
Dependent Claim
12 words
The method of claim 1 wherein the first layer further includes fluorine.
Claim 9
Dependent Claim
33 words
The method of claim 1 further comprising after forming said second layer: (d) forming a capping layer over the second layer, the capping layer being formed by a plasma-enhanced chemical vapor deposition process.
Claim 10
Independent Claim
65 words
A method of forming a multilayer silicon oxide dielectric film over a substrate, said method comprising: (a) forming a first layer of silicon oxide over the substrate using a plasma CVD process; (b) thereafter, exposing a surface of the first silicon oxide layer to activated oxygen; and (c) thereafter, forming a second layer of silicon oxide on the first layer using a thermal CVD process.
Claim 11
Independent Claim
65 words
A method of forming a multilayer silicon oxide dielectric film over a substrate, said method comprising: (a) forming a first layer of silicon oxide over the substrate using a plasma CVD process; (b) thereafter, exposing a surface of the first silicon oxide layer to activated oxygen; and (c) thereafter, forming a second layer of silicon oxide on the first layer using a thermal CVD process.
Claim 12
Dependent Claim
23 words
The method of claim 9 wherein said first layer of silicon oxide is formed from a process gas comprising TEOS and diatomic oxygen.
Claim 13
Dependent Claim
22 words
The method of claim 10 wherein said second layer of silicon oxide is formed from a process gas comprising TEOS and ozone.
Claim 14
Dependent Claim
32 words
The method of claim 9 wherein said surface of the first silicon oxide layer is exposed to activated oxygen for between 10 seconds and 10 minutes before said second layer is formed.
Claim 15
Dependent Claim
29 words
The method of claim 9 wherein the exposing step exposes the surface of the first silicon oxide layer to a plasma formed from a gas consisting essentially of oxygen.
Claim 16
Dependent Claim
30 words
The method of claim 9 wherein the exposing step exposes the surface of the first silicon oxide layer to a gas comprising between 1-20 weight percent ozone in diatomic oxygen.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-21 | 2004-05-22 | 2004-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-21 | 2008-05-22 | 2008-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-21 | 2012-05-22 | 2012-11-21 | $7700.00 | Window Closed / Lapsed |