US5356722A
Expired / Lapsed
US
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Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity
Assignee: Applied Materials Inc
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Filing: 1992-06-10
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Granted: 1994-10-18
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Expires: 2012-06-10
Abstract
Abstract A process for depositing void-free silicon oxide layers over stepped topography comprising depositing a first silicon oxide seed layer which is doped with nitrogen from a plasma of tetraethoxysilane and a nitrogen-containing gas, and depositing thereover a silicon oxide layer from a mixture of tetraethoxysilane, ozone and oxygen at low temperatures to produce a silicon oxide layer having improved properties.
Inventors
- 👤 Bang Nguyen
- 👤 Ellie Yieh
- 👤 Maria Galiano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:16
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/44; C23C16/448; C23C16/452; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
65 words
A method of depositing a dielectric planarizing layer over metal lines over a silicon oxide layer on a silicon wafer comprising: a) depositing a first silicon oxide layer on said wafer by generating a plasma from tetraethoxysilane and a nitrogen-containing gas, and b) depositing a second silicon oxide layer on said first silicon oxide layer by thermal chemical vapor deposition of tetraethoxysilane, ozone and oxygen.
Claim 2
Independent Claim
65 words
A method of depositing a dielectric planarizing layer over metal lines over a silicon oxide layer on a silicon wafer comprising: a) depositing a first silicon oxide layer on said wafer by generating a plasma from tetraethoxysilane and a nitrogen-containing gas, and b) depositing a second silicon oxide layer on said first silicon oxide layer by thermal chemical vapor deposition of tetraethoxysilane, ozone and oxygen.
Claim 3
Dependent Claim
17 words
A method according to claim 1 wherein said metal lines are 1 micron in width or less.
Claim 4
Dependent Claim
20 words
A method according to claim 1 wherein both process steps are carried out at a temperature below about 500° C.
Claim 5
Dependent Claim
21 words
A method according to claim 1 wherein both process steps are carried out at a temperature of from about 350-450° C.
Claim 6
Dependent Claim
17 words
A method according to claim 1 wherein both process steps are carried out in the same reactor.
Claim 7
Dependent Claim
31 words
A method according to claim 1 wherein the first process step is carried out in a PECVD reactor and the second process step is carried out in a thermal CVD reactor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-10-17 | 1998-04-18 | 1998-10-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-17 | 2002-04-18 | 2002-10-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-17 | 2006-04-18 | 2006-10-18 | $7700.00 | Window Closed / Lapsed |