US5484749A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacturing method of semiconductor device
Assignee: Alcan Tech Co Inc
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Filing: 1995-04-04
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Granted: 1996-01-16
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Expires: 2015-04-04
Abstract
Abstract The present invention provides a method of manufacturing a semiconductor device, characterized in that, after a surface of a substrate is reformed by high frequency plasma irradiation while the substrate is heated, an organic silane and ozone are reacted to form a silicon oxide film on the substrate under normal pressure or reduced pressure. The present invention also provides a method of manufacturing a semiconductor device, characterized in that, after a surface of a substrate is reformed by high frequency plasma irradiation while heating the substrate, organic silane, gas containing dopants such as phosphorus or boron and ozone are mixed, and a PSG film, a BSG film, a BPSG film or the like is formed on the substrate under normal pressure or reduced pressure.
Inventors
- 👤 Kazuo Maeda
- 👤 Noboru Tokumasu
- 👤 Yuko Nishimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:24
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6502; H10P14/6512; H10P14/6514; H10P14/6336; H10P14/69215; Y; Y10; Y10S; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
100 words
A method of manufacturing a semiconductor device comprising the steps of: (a) providing a substrate having a surface, a portion of said surface being an exposed portion of a layer of hydrophilic thermally oxidized silicon; (b) contacting the substrate surface with a high frequency nitrogen plasma at 150° to 400° C. to convert the exposed portion of said layer of hydrophilic thermally oxidized silicon from hydrophilic SiO 2 to hydrophobic SiO 2 ; and (c) reacting a gaseous mixture containing an organic silane and ozone to deposit an insulating film having a smooth surface over the substrate surface by CVD.
Claim 2
Independent Claim
100 words
A method of manufacturing a semiconductor device comprising the steps of: (a) providing a substrate having a surface, a portion of said surface being an exposed portion of a layer of hydrophilic thermally oxidized silicon; (b) contacting the substrate surface with a high frequency nitrogen plasma at 150° to 400° C. to convert the exposed portion of said layer of hydrophilic thermally oxidized silicon from hydrophilic SiO 2 to hydrophobic SiO 2 ; and (c) reacting a gaseous mixture containing an organic silane and ozone to deposit an insulating film having a smooth surface over the substrate surface by CVD.
Claim 3
Dependent Claim
42 words
A method of manufacturing a semiconductor device according to claim 1, wherein the substrate comprises the hydrophilic thermally oxidized silicon layer on a silicon layer and a discontinuous layer of poly-Si partially covering the surface of said hydrophilic thermally oxidized silicon layer.
Claim 4
Dependent Claim
32 words
A method of manufacturing a semiconductor device according to claim 1, wherein the insulating film is a film selected from the group consisting of SiO 2 , PSG, BSG and BPSG films.
Claim 5
Dependent Claim
31 words
A method of manufacturing a semiconductor device according to claim 1 further comprising regulating the amplitude of electric power forming the plasma to avoid film formation and etching of the substrate.
Claim 6
Independent Claim
98 words
A method of manufacturing a semiconductor device comprising the steps of: (a) irradiating a substrate having a surface, formed in part by at least one surface area of an exposed portion of a layer of hydrophilic, thermally oxidized silicon, with a high frequency nitrogen plasma at from 250° to 400° C. for about 1 to 60 minutes, whereby the hydrophilic thermally oxidized silicon in the surface area is converted from hydrophilic SiO 2 to hydrophobic SiO 2 ; and (b) reacting an organic silane and ozone to provide on the converted surface a smooth CVD silicon oxide film.
Claim 7
Independent Claim
98 words
A method of manufacturing a semiconductor device comprising the steps of: (a) irradiating a substrate having a surface, formed in part by at least one surface area of an exposed portion of a layer of hydrophilic, thermally oxidized silicon, with a high frequency nitrogen plasma at from 250° to 400° C. for about 1 to 60 minutes, whereby the hydrophilic thermally oxidized silicon in the surface area is converted from hydrophilic SiO 2 to hydrophobic SiO 2 ; and (b) reacting an organic silane and ozone to provide on the converted surface a smooth CVD silicon oxide film.
Claim 8
Dependent Claim
31 words
A method of manufacturing a semiconductor device according to claim 5 further comprising regulating the amplitude of electric power forming the plasma to avoid film formation and etching of the substrate.
Claim 9
Independent Claim
105 words
A method of manufacturing a semiconductor device comprising the steps of: (a) providing a substrate having a surface, a portion of said surface being an exposed layer of hydrophilic thermally oxidized silicon; (b) contacting the substrate surface with a high frequency plasma of a gas selected from the group consisting of O 2 , Ar and He, to convert the exposed surface of said layer of thermally oxidized silicon from hydrophilic SiO 2 to hydrophobic SiO 2 ; and (c) reacting a gaseous mixture containing an organic silane and ozone to deposit an insulating film having a smooth surface over the substrate surface by CVD.
Claim 10
Independent Claim
105 words
A method of manufacturing a semiconductor device comprising the steps of: (a) providing a substrate having a surface, a portion of said surface being an exposed layer of hydrophilic thermally oxidized silicon; (b) contacting the substrate surface with a high frequency plasma of a gas selected from the group consisting of O 2 , Ar and He, to convert the exposed surface of said layer of thermally oxidized silicon from hydrophilic SiO 2 to hydrophobic SiO 2 ; and (c) reacting a gaseous mixture containing an organic silane and ozone to deposit an insulating film having a smooth surface over the substrate surface by CVD.
Claim 11
Dependent Claim
37 words
A method of manufacturing a semiconductor device according to claim 7, wherein the substrate comprises the thermally oxidized silicon on a silicon layer and a discontinuous layer of poly-Si partially covering the surface of thermally oxidized silicon.
Claim 12
Dependent Claim
31 words
A method of manufacturing a semiconductor device according to claim 7 further comprising regulating the amplitude of electric power forming the plasma to avoid film formation and etching of the substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-01-15 | 1999-07-17 | 2000-01-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-15 | 2003-07-17 | 2004-01-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-15 | 2007-07-17 | 2008-01-16 | $7700.00 | Window Closed / Lapsed |