US5271972A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity
Assignee: Applied Materials Inc
•
Filing: 1992-08-17
•
Granted: 1993-12-21
•
Expires: 2012-08-17
Abstract
Abstract A method of depositing good quality thermal CVD silicon oxide layers over a PECVD TEOS/oxygen silicon oxide layer comprising forming an interstitial layer by ramping down the power in the last few seconds of the PECVD deposition.
Inventors
- 👤 Kurt Kwok
- 👤 Robert Robertson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/662; H10W; H10W20/00; H10W20/01; H10W20/071; H10P14/6336
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
135 words
A process for depositing a plasma enhanced CVD (PECVD) silicon oxide layer on a substrate in a reactor comprising: a) depositing a PECVD silicon oxide layer from a plasma of tenaethylorthosilane (TEOS) and oxygen at a power level of about 5-10 watts per square centimeter on a semiconductor substrate, b) reducing the power while maintaining the TEOS and oxygen gas flows in the reactor, thereby forming an intermediate PECVD silicon oxide layer on the PECVD silicon oxide layer and c) depositing a thermal CVD silicon oxide layer on the intermediate PECVD silicon oxide layer by a thermal chemical vapor deposition process from a precursor gas mixture of TEOS, ozone and oxygen, so that the overlying thermal CVD silicon oxide layer has less surface sensitivity due to the presence of the intermediate PECVD silicon oxide layer.
Claim 2
Dependent Claim
135 words
A process for depositing a plasma enhanced CVD (PECVD) silicon oxide layer on a substrate in a reactor comprising: a) depositing a PECVD silicon oxide layer from a plasma of tenaethylorthosilane (TEOS) and oxygen at a power level of about 5-10 watts per square centimeter on a semiconductor substrate, b) reducing the power while maintaining the TEOS and oxygen gas flows in the reactor, thereby forming an intermediate PECVD silicon oxide layer on the PECVD silicon oxide layer and c) depositing a thermal CVD silicon oxide layer on the intermediate PECVD silicon oxide layer by a thermal chemical vapor deposition process from a precursor gas mixture of TEOS, ozone and oxygen, so that the overlying thermal CVD silicon oxide layer has less surface sensitivity due to the presence of the intermediate PECVD silicon oxide layer.
Claim 3
Dependent Claim
36 words
A process according to claim 1 wherein the power used in step a) is reduced in a first stage to about 80-55% of said power and in a second stage to about 45-10% of said power.
Claim 4
Dependent Claim
46 words
A process according to claim 1 wherein the power used in step a) is reduced in a first stage to about 80-65% of said power, in a second stage to about 50-35% of said power and in a final stage to about 30-10% of said power.
Claim 5
Dependent Claim
18 words
A process according to claim 1 wherein step b) is continued for a maximum of about 8 seconds.
Claim 6
Dependent Claim
16 words
A process according to claim 3 wherein each stage is carried out for about 2 seconds.
References Cited (Backward Citations)
US4987005A
Cited
US4872947A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-12-20 | 1997-06-21 | 1997-12-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-12-20 | 2001-06-21 | 2001-12-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-12-20 | 2005-06-21 | 2005-12-21 | $7700.00 | Window Closed / Lapsed |