Patent US6091152A successfully refreshed from Google Patents.
US6091152A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method for fabricating the same
Assignee: Sharp Corp
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Filing: 1998-05-05
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Granted: 2000-07-18
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Expires: 2018-05-05
Abstract
Abstract A method for fabricating a semiconductor device of the invention, the method includes the steps of: providing an oxygen concentration in a region of a silicon film of 1x1018 cm-3 or less; depositing a film including a metal on the silicon film; and reacting the silicon film with the film including a metal so as to form a metal silicide film in the region of the silicon film.
Inventors
- 👤 Hiroshi Iwata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:04
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0212; H10D30/027; H10D30/0275; H10D30/60; H10D62/00; H10D62/80; H10D62/83; H10D62/834; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/60; H10D64/62; H10D64/66; H10D64/661; H10D64/662; H10D64/663; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
27 words
A semiconductor device having a titanium silicide film including TiSi 2 -C54 crystal gains which are in contact with each other via titanium nitride between said gains.
Claim 2
Dependent Claim
27 words
A semiconductor device having a titanium silicide film including TiSi 2 -C54 crystal gains which are in contact with each other via titanium nitride between said gains.
Claim 3
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein the titanium silicide film forms an interconnection line.
Claim 4
Dependent Claim
25 words
A semiconductor device according to claim 1, comprising a self-aligned silicide transistor including the titanium silicide film and a source, a drain, and a gate.
Claim 5
Dependent Claim
36 words
A semiconductor device according to claim 1, wherein said crystal grains have a grain size and wherein at least a portion of said film has a width less than the grain size of said crystal grains.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-18 | 2004-01-17 | 2004-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-18 | 2008-01-17 | 2008-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-18 | 2012-01-17 | 2012-07-18 | $7700.00 | Window Closed / Lapsed |