US4384301A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High performance submicron metal-oxide-semiconductor field effect transistor device structure
Assignee: Texas Instruments Inc
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Filing: 1981-10-09
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Granted: 1983-05-17
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Expires: 2001-10-09
Abstract
Abstract A novel metal-oxide-semiconductor (MOS) field effect transistor having enhanced oxide thickness at the edge of the gate electrode and having metal silicide regions in the gate electrode and source and drain areas. The enhanced oxide thickness improves interconnect-to-interconnect breakdown voltage in multilevel interconnect devices as well as minimizing gate overlap of source and drain. The metal silicide regions reduce series resistance and improve device speed and packing density.
Inventors
- 👤 Al F. Tasch, Jr.
- 👤 Pallab K. Chatterjee
- 👤 Horng-Sen Fu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 23:14
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10D64/66; H10D64/661; H10D64/662; H10D64/663; Y; Y10; Y10S; Y10S148/00; Y10S148/147; Y10T; Y10T29/00; Y10T29/21
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
146 words
A semiconductor device comprising: a semiconductor substrate having a first conductivity type; a source region and a drain region, each having a second conductivity type which is opposite to said first conductivity type, separately disposed within a surface of said substrate, said source and drain regions defining a channel region therebetween; a gate insulator layer on said channel region; a gate on said gate insulator layer, said gate including a top surface and sides; first and second insulating regions at the respective sides of said gate nearest said source and drain regions, said respective insulating regions each comprising a top surface which is approximately at the level of the top surface of said gate; first and second silicide regions, laterally extended atop said source region and said drain region respectively; and a thick oxide layer of substantially uniform thickness atop said gate and said insulating regions.
Claim 2
Dependent Claim
146 words
A semiconductor device comprising: a semiconductor substrate having a first conductivity type; a source region and a drain region, each having a second conductivity type which is opposite to said first conductivity type, separately disposed within a surface of said substrate, said source and drain regions defining a channel region therebetween; a gate insulator layer on said channel region; a gate on said gate insulator layer, said gate including a top surface and sides; first and second insulating regions at the respective sides of said gate nearest said source and drain regions, said respective insulating regions each comprising a top surface which is approximately at the level of the top surface of said gate; first and second silicide regions, laterally extended atop said source region and said drain region respectively; and a thick oxide layer of substantially uniform thickness atop said gate and said insulating regions.
Claim 3
Dependent Claim
14 words
The device of claim 1, further comprising a third silicide region atop said gate.
Claim 4
Dependent Claim
12 words
The device of claim 1, wherein said gate oxide comprises silicon dioxide.
Claim 5
Dependent Claim
21 words
The device of claim 1, wherein said first and second silicide regions laterally abut said first and second insulating regions respectively.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-05-16 | 1986-11-15 | 1987-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-05-16 | 1990-11-15 | 1991-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-05-16 | 1994-11-15 | 1995-05-17 | $7700.00 | Window Closed / Lapsed |