Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable the reduction of the transconductance to be prevented and to enable the sheet resistance of the source-drain to be reduced by changing a desired region of the gate electrode or of the electrode and the source-drain into silicide. CONSTITUTION:A region 30 is the silicide region of the gate electrode when heat treatment is applied. A gate electrode 20 comprising a gate insulating film 2 and a polycrystalline silicon 3 is formed on a silicon substrate 1, and then with the gate electrode as a mask, e.g., P is ion-implanted, forming a low density N-type region 4. Next, e.g., platinum 21 is deposited on the silicon substrate 1, and then heat treatment is applied, changing only the polycrystalline silicon 3 into silicide. Then, the remaining platinum 21 and the gate insulating film 2 are removed, thereafter with the silicide region 30 of the gate electrode as a mask As ions are implanted, and heat treatment is applied to form a high density N-type region 5, achieving a LDD structure. Finally, a contact window is opened in the high density N-type region 5, and the electrode wiring is performed, completing the device.

Inventors

• 👤 Kiyoto Watabe
• 👤 毅代登 渡部

Bibliographic Details