US5525543A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a semiconductor device using a titanium-rich silicide film
Assignee: Lapis Semiconductor Co Ltd
•
Filing: 1995-04-17
•
Granted: 1996-06-11
•
Expires: 2015-04-17
Abstract
Abstract In a method of forming an adhesive layer for a blanket layer filling a contact hole in a semiconductor device, a Ti film, Ti-rich TiN film or a TiSi x (x being 1.1 to 1.8) film is formed, and then a TiN (stoichiometric) film is formed. The Ti film, Ti-rich TiN film or TiSi x is annealed to be converted into TiSi 2 film. The formation of the Ti film, Ti-rich TiN film or a TiSi x is performed by a continuous CVD process.
Inventors
- 👤 Shih-Chang Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 05:04
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/033; H10W20/056; Y; Y10; Y10S; Y10S148/00; Y10S148/019; Y10S148/02
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
114 words
A method of making a semiconductor device comprising the steps of: forming a Ti-rich TiSi x film in a contact hole formed on a silicon substrate at an area where an implanted layer is formed, wherein x is between about 1.1 and 1.8; subsequently forming a TiN film in the contact hole on the Ti-rich TiSi x film; forming a blanket film in the contact hole on the TiN film; and conducting a heat treatment for forming an ohmic contact before or after the formation of the blanket film so that the Ti-rich TiSi x film consumes silicon in a junction area underlying the contact hole and is converted into a TiSi 2 film.
Claim 2
Independent Claim
114 words
A method of making a semiconductor device comprising the steps of: forming a Ti-rich TiSi x film in a contact hole formed on a silicon substrate at an area where an implanted layer is formed, wherein x is between about 1.1 and 1.8; subsequently forming a TiN film in the contact hole on the Ti-rich TiSi x film; forming a blanket film in the contact hole on the TiN film; and conducting a heat treatment for forming an ohmic contact before or after the formation of the blanket film so that the Ti-rich TiSi x film consumes silicon in a junction area underlying the contact hole and is converted into a TiSi 2 film.
Claim 3
Dependent Claim
32 words
The method of claim 1, wherein the formation of the Ti-rich TiSi x film and the formation of the TiN film are conducted by CVD using the same film-forming chamber and continuously.
Claim 4
Dependent Claim
63 words
The method of claim 1, wherein the formation of the Ti-rich TiSi x film and the formation of the TiN film are conducted using a gas containing Ti as a first source gas, and initially using SiH 4 as a second source gas to form the TiSi x film, and changing the second source gas to NH 3 to form the TiN film.
Claim 5
Dependent Claim
49 words
The method of claim 1, wherein the Ti-containing gas is TiCl 4 , and the flow ratio between SiH 4 gas and TiCl 4 gas is about 1.5 to about 3.0, and the flow ratio between NH 3 gas and TiCl 4 gas is about 1/10 to about 1/20.
Claim 6
Dependent Claim
25 words
The method of claim 1, wherein said blanket layer is formed of a refractory metal selected from the group consisting of tungsten, molybdenum and chromium.
References Cited (Backward Citations)
US4803127A
Cited
US4570328A
Cited
US4663191A
Cited
US4960732A
Cited
JPS63227019A
Cited
US4897709A
Cited
JPH0245958A
Cited
JPH02119129A
Cited
US5049975A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-06-11 | 1999-12-11 | 2000-06-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-11 | 2003-12-11 | 2004-06-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-11 | 2007-12-11 | 2008-06-11 | $7700.00 | Window Closed / Lapsed |