Manufacturing method of semiconductor device

Abstract

Abstract PURPOSE:To obtain a contact wherein junction leak does not generate by a method wherein an insulating film is stuck on a semiconductor substrate, an opening part is bored, high melting point metal is arranged on the whole surface containing the opening part, silicide of high melting point metal is generated by heat treatment, and wiring metal is arranged on the silicide, via Ti nitride or W nitride. CONSTITUTION:An insulating film 102 is stuck on a P-type Si substrate 101 having an N<+> type diffusion layer 104; an opening part is arranged so as to correspond with the diffusion layer 104; high melting point metal 103 like Ti is stuck on the whole surface by sputtering method; Ti is stuck on the film 102 and the side wall and the bottom surface of the opening part. Next, in a nitrogen atmosphere 105, heat treatment at 700-800 deg.C is performed for about 30 seconds; thereby, a TiSi2 layer 106 is made to generate on a surface being in contact with the diffusion layer 104, and a TiN layer 107 is formed on the layer 106, the side wall, and the film 102 surface; then the layer 107 is covered with a layer 108 of TiN or TiW; wiring metal 109 is formed on the layer 107 in the opening part so as to stretch on the layer 108. Thereby, the leak in the process of heat treatment is prevented even in the case of microminiaturization.

Inventors

• 👤 Masafumi Ogita
• 👤 荻田　雅史

Bibliographic Details