Semiconductor device

Abstract

Abstract PURPOSE:To obtain a highly reliable semiconductor device equipped with wiring which is superior in step coverage by forming a wiring region connecting to silicide by the use of a metal silicide having a high melting point, a metal nitride having a high melting point, and an Al alloy. CONSTITUTION:A contact hole region is composed of a metal silicide layer 6 of Ti, W, Ta, Mo, Co, Zr, and the like having a high melting point, a metal nitride 8 having a high melting point, and an Al alloy 7. Layers on a layer insulation film 3 are formed by a metal 4 having a high melting point, a metal nitride 5' having a high melting point, and the Al alloy 7. Then, a wiring region directly below Al is formed in the contact region by using materials which have high barrier properties as well as superior wettability to the Al alloy 7. The formation of such a wiring region makes it possible to obtain a highly reliable semiconductor device equipped with wiring which is superior in step coverage.

Inventors

• 👤 Juri Kato
• 👤 樹理 加藤
• 👤 Kenji Yokoyama
• 👤 横山　謙二

Bibliographic Details