Patent US5937323A successfully refreshed from Google Patents.
US5937323A
Expired / Lapsed
US
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Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
Assignee: Applied Materials Inc
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Filing: 1997-06-03
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Granted: 1999-08-10
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Expires: 2017-06-03
Abstract
Abstract A sequence of process steps forms a fluorinated silicon glass (FSG) layer on a substrate. This layer is much less likely to form a haze or bubbles in the layer, and is less likely to desorb water vapor during subsequent processing steps than other FSG layers. An undoped silicon glass (USG) liner protects the substrate from corrosive attack. The USG liner and FSG layers are deposited on a relatively hot wafer surface and can fill trenches on the substrate as narrow as 0.8 μm with an aspect ratio of up to 4.5:1.
Inventors
- 👤 Maciek Orczyk
- 👤 Laxman Murugesh
- 👤 Pravin Narwankar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 15:33
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/46; C23C16/463; C03; C03C; C03C3/00; C03C3/04; C03C3/06; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/455; C23C16/45557; C23C16/466; C23C16/50; C23C16/513; C23C16/52; H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6548; H10P14/66; H10P14/668; H10P14/6681; H10P95/00; C03C2201/00; C03C2201/06; C03C2201/08; C03C2201/12; C03C2203/00; C03C2203/40; C03C2203/42; C03C2203/46; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6924
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
130 words
A method for forming a film on a substrate in a deposition system chamber, the method comprising: (a) heating the substrate in the chamber to a temperature of at least about 100° C.; (b) flowing a silicon-containing process gas into the chamber under conditions suitable for depositing silicon glass; (c) forming a layer of undoped silicon glass on the substrate; (d) flowing a halogen-containing gas into the chamber at a flow rate, while the temperature of the substrate is at least about 100° C., to form a first portion of a halogen-containing silicon oxide layer on said layer of undoped silicon glass; and (e) increasing the flow rate of the halogen-containing gas and lowering the temperature of the substrate to form a second portion of the halogen-containing silicon oxide layer.
Claim 2
Independent Claim
130 words
A method for forming a film on a substrate in a deposition system chamber, the method comprising: (a) heating the substrate in the chamber to a temperature of at least about 100° C.; (b) flowing a silicon-containing process gas into the chamber under conditions suitable for depositing silicon glass; (c) forming a layer of undoped silicon glass on the substrate; (d) flowing a halogen-containing gas into the chamber at a flow rate, while the temperature of the substrate is at least about 100° C., to form a first portion of a halogen-containing silicon oxide layer on said layer of undoped silicon glass; and (e) increasing the flow rate of the halogen-containing gas and lowering the temperature of the substrate to form a second portion of the halogen-containing silicon oxide layer.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein said substrate is heated in step 1(a) with a plasma.
Claim 4
Dependent Claim
22 words
The method of claim 1 wherein said layer of undoped silicon glass is between about 300 Å and about 400 Å thick.
Claim 5
Dependent Claim
22 words
The method of claim 1 wherein said first portion of said halogen-containing silicon glass layer is less than about 300 Å thick.
Claim 6
Dependent Claim
56 words
The method of claim 4 wherein said first portion of said halogen-containing silicon glass layer includes a lower-halogen layer less than about 100 Å thick formed at an onset of said flow of said halogen-containing gas and a higher-halogen layer formed on said lower-halogen layer during a main flow of said flow of said halogen-containing gas.
Claim 7
Dependent Claim
19 words
The method of claim 1 wherein said step 1(e) occurs less than about 5 seconds after said step 1(d).
Claim 8
Dependent Claim
13 words
The method of claim 1 wherein said halogen-containing gas comprises SiF 4 .
Claim 9
Dependent Claim
38 words
The method of claim 1 further comprising the step of cooling said substrate by flowing a coolant medium adjacent to a backside of said substrate after said forming of said layer of undoped silicon glass in step 1(c).
Claim 10
Dependent Claim
12 words
The method of claim 8 wherein said coolant medium comprises helium gas.
Claim 11
Dependent Claim
22 words
The method of claim 1 wherein said layer of undoped silicon glass is between about 150 Å and about 600 Å thick.
Claim 12
Dependent Claim
20 words
The method of claim 1 wherein said undoped silicon glass layer is significantly thinner than said halogen-containing silicon oxide layer.
Claim 13
Independent Claim
124 words
A method for forming a film on a substrate in a chamber comprising the steps of: (a) forming and maintaining a plasma in the chamber at an RF power level and at a first chamber pressure for a sufficient time to heat the substrate to a temperature of at least 100° C.; (b) flowing a process gas into the chamber to form a first portion of the film; (c) flowing a halogen-containing gas into the chamber to form a second portion of the film, wherein said second portion is a halogen-doped silicon oxide; (d) thereafter, reducing said RF power level, thereby reducing said heating of said substrate, and forming a third portion of the film, wherein said third portion is a halogen-doped silicon oxide.
Claim 14
Independent Claim
124 words
A method for forming a film on a substrate in a chamber comprising the steps of: (a) forming and maintaining a plasma in the chamber at an RF power level and at a first chamber pressure for a sufficient time to heat the substrate to a temperature of at least 100° C.; (b) flowing a process gas into the chamber to form a first portion of the film; (c) flowing a halogen-containing gas into the chamber to form a second portion of the film, wherein said second portion is a halogen-doped silicon oxide; (d) thereafter, reducing said RF power level, thereby reducing said heating of said substrate, and forming a third portion of the film, wherein said third portion is a halogen-doped silicon oxide.
Claim 15
Dependent Claim
13 words
The method of claim 12 wherein said halogen-containing gas is SiF 4 .
Claim 16
Dependent Claim
35 words
The method of claim 12 wherein said substrate is cooled by flowing a coolant medium adjacent to a backside of said substrate after said forming of said first portion of the film in step (b).
Claim 17
Dependent Claim
12 words
The method of claim 14 wherein said coolant medium comprises helium gas.
Claim 18
Dependent Claim
19 words
The method of claim 12 further comprising, after step (d), increasing a rate of flow of said halogen-containing gas.
Claim 19
Dependent Claim
13 words
The method of claim 12 wherein said plasma is a high density plasma.
Claim 20
Dependent Claim
23 words
The method of claim 12 wherein said first portion of said film is deposited from a process gas comprising silicon and oxygen atoms.
Claim 21
Independent Claim
154 words
A method for forming a film on a substrate in a high density plasma CVD chamber, the method comprising: (a) forming a plasma from an inert gas flowed into the chamber to heat the substrate to a temperature between about 100° C. and 450° C. wherein said plasma is formed by application of RF energy at a first RF power level to a coil; (b) flowing a non-halogen-containing source gas into the chamber to form a layer of undoped silicon glass on the substrate; (c) flowing a coolant medium adjacent to a backside of the substrate; (d) flowing a halogen-containing gas into the chamber to form a first portion of a halogen-doped silicon glass layer on the layer of said undoped silicon glass while said substrate is at a second temperature above about 100° C.; (e) thereafter, reducing said first RF power level, and forming a second portion of the halogen-doped silicon glass layer.
Claim 22
Independent Claim
154 words
A method for forming a film on a substrate in a high density plasma CVD chamber, the method comprising: (a) forming a plasma from an inert gas flowed into the chamber to heat the substrate to a temperature between about 100° C. and 450° C. wherein said plasma is formed by application of RF energy at a first RF power level to a coil; (b) flowing a non-halogen-containing source gas into the chamber to form a layer of undoped silicon glass on the substrate; (c) flowing a coolant medium adjacent to a backside of the substrate; (d) flowing a halogen-containing gas into the chamber to form a first portion of a halogen-doped silicon glass layer on the layer of said undoped silicon glass while said substrate is at a second temperature above about 100° C.; (e) thereafter, reducing said first RF power level, and forming a second portion of the halogen-doped silicon glass layer.
Claim 23
Dependent Claim
17 words
The method of claim 14 wherein said non-halogen containing source gas comprises silane and an oxygen-containing source.
Claim 24
Dependent Claim
12 words
The method of claim 20 wherein said halogen-containing gas comprises fluorine atoms.
Claim 25
Dependent Claim
21 words
The method of claim 19 wherein said layer of undoped silicon glass is significantly thinner than said halogen-doped silicon glass layer.
Claim 26
Dependent Claim
28 words
The method of claim 22 wherein said first portion of said halogen-doped silicon glass layer is significantly thinner than said second portion of said halogen-doped silicon glass layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-08-09 | 2003-02-08 | 2003-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-09 | 2007-02-08 | 2007-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-09 | 2011-02-08 | 2011-08-10 | $7700.00 | Window Closed / Lapsed |