US5041311A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Chemical vapor deposition method using a plasma self-cleaning
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1990-03-09
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Granted: 1991-08-20
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Expires: 2010-03-09
Abstract
Abstract A CVD method comprises the steps of making a plasma self-cleaning within a chamber using a gas which includes fluorine, coating an inside of the chamber by a first layer of a material which includes silicon and nitrogen, and forming a second layer on a predetermined surface within the chamber by a chemical vapor deposition. The second layer is made of a material which includes a quantity of nitrogen smaller than a quantity of nitrogen included in the first layer.
Inventors
- 👤 Atsuhiro Tsukune
- 👤 Kenji Koyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 15:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; C; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4405; C23C16/4404; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923; H10P70/00; H10P70/20; H10P70/23
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
115 words
A chemical vapor deposition method comprising the steps of: self-cleaning the inside of a chemical vapor deposition chamber with a plasma produced from a flourine-containing gas coating the inside of the chemical vapor deposition chamber with a first layer which is made of a material selected from the group consisting of SiN, SiON and SiBN, said first layer being coated to at least 1000 Å; placing a substrate within the chemical vapor deposition chamber; and forming a second layer on a predetermined surface of the substrate within the chemical vapor deposition chamber by a chemical vapor deposition, said second layer being made of an oxygen and silicon containing a material which includes substantially no nitrogen.
Claim 2
Dependent Claim
115 words
A chemical vapor deposition method comprising the steps of: self-cleaning the inside of a chemical vapor deposition chamber with a plasma produced from a flourine-containing gas coating the inside of the chemical vapor deposition chamber with a first layer which is made of a material selected from the group consisting of SiN, SiON and SiBN, said first layer being coated to at least 1000 Å; placing a substrate within the chemical vapor deposition chamber; and forming a second layer on a predetermined surface of the substrate within the chemical vapor deposition chamber by a chemical vapor deposition, said second layer being made of an oxygen and silicon containing a material which includes substantially no nitrogen.
Claim 3
Dependent Claim
23 words
The chemical vapor deposition method as claimed in claim 1, wherein said step of making the plasma self-cleaning uses a NF 3 gas.
Claim 4
Dependent Claim
34 words
The chemical vapor deposition method as claimed in claim 1 wherein said second layer is made from a material selected from the group consisting of silicon dioxide (SiO 2 ) and phospho-silicate glass (PSG).
Claim 5
Dependent Claim
19 words
The chemical vapor deposition method as claimed in claim 3 wherein said predetermined surface is made of silicon (Si).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-19 | 1995-02-18 | 1995-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-19 | 1999-02-18 | 1999-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-19 | 2003-02-18 | 2003-08-20 | $7700.00 | Window Closed / Lapsed |