US5399529A
Expired / Lapsed
US
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Process for producing semiconductor devices
Assignee: NEC Corp
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Filing: 1993-05-26
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Granted: 1995-03-21
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Expires: 2013-05-26
Abstract
Abstract Disclosed is a process for producing semiconductor devices of multilevel interconnection structure which are absolutely free from cracking in the insulator films and voids or disconnections in the aluminum wirings. After a fluorine-containing silicon oxide film 4 is formed at a temperature of 50° C. or less using an alkoxyfluorosilane vapor and a water vapor, a spin-on glass film 5 is formed thereon by baking at a temperature of 200° C. or less, which is exposed to the alkoxyfluorosilane vapor to effect condensation of the spin-on glass film at room temperature, and then an insulator film is formed thereon, using the thus treated spin-on glass film as a flattening material.
Inventors
- 👤 Tetsuya Homma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:25
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/093; H10W20/097
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
167 words
A process for producing a semiconductor device comprising the steps of: a step for forming a lower level wiring on a semiconductor substrate with an insulator film interposed therebetween; a step of forming a first insulator film primarily containing silicon oxide on the entire surface of said substrate including said lower level wiring; a step of forming a spin-on glass film by applying a coating solution of a silicon-containing compound to said first silicon oxide film, and heating the thus formed coating film, followed by exposure of the surface of said spin-on glass film to a vapor of fluorine-containing compound; a step of forming a second insulator film primarily containing silicon oxide on said spin-on glass film; a step of forming via holes at predetermined positions through said second insulator film, spin-on glass film and first insulator film; and a step of forming an upper level wiring connected to said lower level wiring through said via holes, wherein said vapor of fluorine-containing compound primarily contains an alkoxyfluorosylane.
Claim 2
Dependent Claim
167 words
A process for producing a semiconductor device comprising the steps of: a step for forming a lower level wiring on a semiconductor substrate with an insulator film interposed therebetween; a step of forming a first insulator film primarily containing silicon oxide on the entire surface of said substrate including said lower level wiring; a step of forming a spin-on glass film by applying a coating solution of a silicon-containing compound to said first silicon oxide film, and heating the thus formed coating film, followed by exposure of the surface of said spin-on glass film to a vapor of fluorine-containing compound; a step of forming a second insulator film primarily containing silicon oxide on said spin-on glass film; a step of forming via holes at predetermined positions through said second insulator film, spin-on glass film and first insulator film; and a step of forming an upper level wiring connected to said lower level wiring through said via holes, wherein said vapor of fluorine-containing compound primarily contains an alkoxyfluorosylane.
Claim 3
Dependent Claim
41 words
The process for producing a semiconductor device according to claim 1, wherein said first and second insulator films are fluorine-containing silicon oxide films formed using a vapor of alkoxyfluorosilane and a water vapor at a temperature of 50° C. or less.
Claim 4
Dependent Claim
40 words
The process for producing a semiconductor device according to claim 1, wherein the heat treatment for forming said spin-on glass film is carried out at a temperature of 200° C. or less in an oxygen gas or inert gas atmosphere.
References Cited (Backward Citations)
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