Semiconductor device having an interlayer insulating film of high crack resistance

Claim 1

A semiconductor device, comprising: a semiconductor substrate; a pattern of conductive material formed on a surface above said semiconductor substrate; a first silicon oxide film having excellent crack resistance covering the surface of said pattern and exposed portions of the surface on which the pattern is formed, said first silicon oxide film being formed by plasma chemical vapor deposition; a second silicon oxide film having superior step coverage deposited on said first silicon oxide film and filling recessed portions existing on the surface of said first silicon oxide film, said second silicon oxide film being formed by atmospheric chemical vapor deposition using ozone and organic silicon; a third silicon oxide film being superior in filling of recesses filling in recessed portions existing on the surface of said second silicon oxide film to provide a flattened surface, said third silicon oxide film being formed by applying a spin on glass film; and a fourth silicon oxide film formed on said second silicon oxide film and said third silicon oxide film, said fourth silicon oxide film being formed by a technique selected from the group consisting of (i) plasma chemical vapor deposition, (ii) atmospheric pressure chemical vapor deposition using organic silicon, and (iii) atmospheric pressure chemical vapor deposition using SiH 4 , PH 3 and O 2 .