EP0299249A1
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EP
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Processing apparatus and method
Assignee: Texas Instruments Inc
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Filing: 1988-06-23
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Granted: —
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Expires: 2008-06-23
Abstract
Abstract A process for deposition of silicon oxide films which utilizes the combination of remote (1326) and in situ plasma (1314, 1312) in a low pressure process module (1300) and the plasma is generated form a mixture of Helium, a source of oxygen, for example, O₂, N₂O, CO₂ and NO₂, and monosilane, for example, SiH₂Cl₂ or SiH₄.
Inventors
- 👤 Lee M. Loewestein
- 👤 Dean W. Freeman
- 👤 Cecil J. Davis
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 15:31
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32357; C; C23; C23C; C23C16/00; C23C16/44; C23C16/48; C23C16/482; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/50; C23C16/517; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
78 words
A process for deposition of a silicon dioxide film onto a workpiece comprising the steps of: (a) disposing said workpiece into a low pressure process chamber; (b) generating remote plasma from a gas comprised of a mixture of Helium and a source of oxygen; (c) introducing said remote plasma into said chamber and to a face of said workpiece; and (d) generating an in situ plasma within said chamber from a gas mixture of Helium, O₂ and monosilane.
Claim 2
Dependent Claim
78 words
A process for deposition of a silicon dioxide film onto a workpiece comprising the steps of: (a) disposing said workpiece into a low pressure process chamber; (b) generating remote plasma from a gas comprised of a mixture of Helium and a source of oxygen; (c) introducing said remote plasma into said chamber and to a face of said workpiece; and (d) generating an in situ plasma within said chamber from a gas mixture of Helium, O₂ and monosilane.
Claim 3
Dependent Claim
20 words
The method as set forth in claim 1 wherein said monosilane are taken from the group of SiH₄ and SiH₂Cl₂.
Claim 4
Dependent Claim
24 words
The process as set forth in claim 1 wherein the source of oxygen is taken from the group of O₂, N₂O, CO₂, and NO₂.
Claim 5
Dependent Claim
18 words
The process as set forth in claim 1 wherein said remote and in situ plasmas are generated simultaneously.
Claim 6
Dependent Claim
17 words
The process as set forth in claim 1 wherein the process is carried out at ambient temperature.
Claim 7
Dependent Claim
15 words
The process as set forth in claim 1 wherein the low pressure is 1 Torr.
Claim 8
Dependent Claim
36 words
The process as set forth in claim 1 wherein the mixture for the in situ and remote plasmas has a flow comprised of Helium at 1000 sccm, O₂ at 100 sccm, and SiH₄ at 50 sccm.
Claim 9
Dependent Claim
40 words
The process as set forth in claim 1 wherein the power utilized for generating the remote plasma is 400 watts at a frequency of 2450 MHz and the in situ plasma is 100 watts at a frequency of 13.56 MHz.
Claim 10
Independent Claim
55 words
A method for depositing silicon dioxide on a workpiece comprising: (a) generating free radicals from an oxygen containing gas in a plasma generating chamber remote from a process chamber; (b) introducing the free radicals into the chamber and to a face of the workpiece; and (c) providing a silicon source gas to the process chamber.
Claim 11
Independent Claim
55 words
A method for depositing silicon dioxide on a workpiece comprising: (a) generating free radicals from an oxygen containing gas in a plasma generating chamber remote from a process chamber; (b) introducing the free radicals into the chamber and to a face of the workpiece; and (c) providing a silicon source gas to the process chamber.
Claim 12
Dependent Claim
17 words
The process as set forth in claim 9 wherein the face to be processed is facing downward.
Claim 13
Dependent Claim
16 words
The process as set forth in claim 9 further including illuminating the workpiece with ultraviolet energy.
Claim 14
Dependent Claim
36 words
The process as set forth in claim 11 wherein said ultraviolet energy is generated using an ultraviolet energy source within the process chamber wherein said ultraviolet energy source is in fluid communication with said process chamber.
Claim 15
Dependent Claim
23 words
The process as set forth in claim 11 wherein said ultraviolet energy is generated using an ultraviolet energy source outside said process chamber.
References Cited (Backward Citations)
GB2173822A
Cited
EP0198361A2
Cited
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