Patent EP0182115A1 successfully refreshed from Google Patents.
US5872415A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Microelectronic structures including semiconductor islands
Assignee: Kobe Steel USA Inc
•
Filing: 1996-08-16
•
Granted: 1999-02-16
•
Expires: 2016-08-16
Abstract
Abstract A microelectronic structure includes a substrate, a semiconductor island on the substrate, and a filler material on the substrate and surrounding the semiconductor island. The semiconductor island includes a first semiconductor material and has a planar island surface opposite the substrate. The filler material includes a layer of a second semiconductor material having a planar single crystal surface adjacent the planar island surface opposite the substrate so that the planar island surface and the planar single crystal surface together define a smooth planar surface. The first semiconductor material can be diamond, and the second semiconductor material can be silicon. In addition, a microelectronic circuit can be provided on the filler material.
Inventors
- 👤 David L. Dreifus
- 👤 Dean M. Malta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 02:12
CPC Classifications
H; H10; H10W; H10W10/00; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3206; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3406; H10P14/38; H10W10/01
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
112 words
A microelectronic structure comprising: a substrate; a semiconductor island on said substrate, said semiconductor island comprising a first semiconductor material and having a planar island surface opposite said substrate; a filler material on said substrate and surrounding said semiconductor island, said filler material comprising a layer of a second semiconductor material having a planar single crystal surface adjacent said planar island surface opposite said substrate so that said planar island surface and said planar single crystal surface together define a smooth planar surface; a microelectronic circuit on said filler material adjacent said semiconductor island; and a layer of a piezoelectric material on said semicondcutor island; wherein said first semiconductor material comprises diamond.
Claim 2
Dependent Claim
112 words
A microelectronic structure comprising: a substrate; a semiconductor island on said substrate, said semiconductor island comprising a first semiconductor material and having a planar island surface opposite said substrate; a filler material on said substrate and surrounding said semiconductor island, said filler material comprising a layer of a second semiconductor material having a planar single crystal surface adjacent said planar island surface opposite said substrate so that said planar island surface and said planar single crystal surface together define a smooth planar surface; a microelectronic circuit on said filler material adjacent said semiconductor island; and a layer of a piezoelectric material on said semicondcutor island; wherein said first semiconductor material comprises diamond.
Claim 3
Dependent Claim
25 words
A microelectronic structure according to claim 1 wherein said layer of said second semiconductor material extends from said substrate to said planar single crystal surface.
Claim 4
Dependent Claim
24 words
A microelectronic structure according to claim 2 wherein said substrate comprises a single crystal layer of said second semiconductor material adjacent said filler material.
Claim 5
Dependent Claim
22 words
A microelectronic structure according to claim 1 wherein said substrate comprises a third material different from said first and second semiconductor materials.
Claim 6
Dependent Claim
42 words
A microelectronic structure according to claim 1 wherein said substrate comprises a third material chosen from the group consisting of titanium, molybdenum, nickel, tungsten, copper, tantalum, silicon carbide, tungsten carbide, silicon nitride, silicon aluminum oxynitride, boron nitride, silicon dioxide, and aluminum oxide.
Claim 7
Dependent Claim
14 words
A microelectronic structure according to claim 1 wherein said second semiconductor material comprises silicon.
Claim 8
Dependent Claim
27 words
A microelectronic structure according to claim 1 wherein said microelectronic circuit is chosen from the group consisting of a transistor, a capacitor, a diode, and a resistor.
Claim 9
Dependent Claim
18 words
A microelectronic structure according to claim 1 further comprising a pair of interdigitated electrodes on said piezoelectric material.
Claim 10
Dependent Claim
110 words
A microelectronic structure comprising: a substrate; a semiconductor island on said substrate, said semiconductor island comprising a first semiconductor material; a filler material on said substrate and surrounding said semiconductor island wherein said filler material is different from said first semiconductor material; a microelectronic circuit on said filler material adjacent said semiconductor island; and a piezoelectric layer on said semiconductor island; wherein said semiconductor island has a planar island surface opposite said substrate and wherein said filler material has a planar filler surface adjacent said planar island semiconductor surface opposite said substrate; and wherein said first planar semiconductor surface and said second planar surface together define a smooth planar surface.
Claim 11
Dependent Claim
110 words
A microelectronic structure comprising: a substrate; a semiconductor island on said substrate, said semiconductor island comprising a first semiconductor material; a filler material on said substrate and surrounding said semiconductor island wherein said filler material is different from said first semiconductor material; a microelectronic circuit on said filler material adjacent said semiconductor island; and a piezoelectric layer on said semiconductor island; wherein said semiconductor island has a planar island surface opposite said substrate and wherein said filler material has a planar filler surface adjacent said planar island semiconductor surface opposite said substrate; and wherein said first planar semiconductor surface and said second planar surface together define a smooth planar surface.
Claim 12
Dependent Claim
14 words
A microelectronic structure according to claim 9 wherein said first semiconductor material comprises diamond.
Claim 13
Dependent Claim
25 words
A microelectronic structure according to claim 9 wherein said filler material comprises a layer of a second semiconductor material extending to said planar filler surface.
Claim 14
Dependent Claim
25 words
A microelectronic structure according to claim 11 wherein said layer of said second semiconductor material comprises a single crystal layer of said second semiconductor material.
Claim 15
Dependent Claim
24 words
A microelectronic structure according to claim 11 wherein said layer of said second semiconductor material extends from said substrate to said planar filler surface.
Claim 16
Dependent Claim
22 words
A microelectronic structure according to claim 13 wherein said substrate comprises a layer of said second semiconductor material adjacent said filler material.
Claim 17
Dependent Claim
14 words
A microelectronic structure according to claim 11 wherein said second semiconductor material comprises silicon.
Claim 18
Dependent Claim
18 words
A microelectronic structure according to claim 9 wherein said substrate comprises a material different from said filler material.
Claim 19
Dependent Claim
35 words
A microelectronic structure according to claim 9 wherein said first semiconductor material is chosen from the group consisting of silicon carbide, carbon nitride, gallium nitride, aluminum nitride, boron nitride, and alloys of group III-V nitrides.
Claim 20
Dependent Claim
27 words
A microelectronic structure according to claim 9 wherein said microelectronic circuit is chosen from the group consisting of a transistor, a capacitor, a diode, and a resistor.
Claim 21
Dependent Claim
18 words
A microelectronic structure according to claim 9 further comprising a pair of interdigitated electrodes on said piezoelectric layer.
Claim 22
Dependent Claim
17 words
A microelectronic structure according to claim 9 wherein said first semiconductor material is a piezoelectric semiconductor material.
Claim 23
Dependent Claim
121 words
A piezoelectric structure comprising: a substrate; a plurality of semiconductor islands on said substrate, each of said semiconductor islands comprising a first semiconductor material, wherein an interfacial surface of each of said semiconductor islands is adjacent said substrate and a growth surface of each of said islands is opposite said substrate; a filler material on said substrate and surrounding each of said semiconductor islands wherein said filler material comprises a material different from said first semiconductor material; a piezoelectric layer on at least one of said semiconductor islands wherein at least a portion of said filler material is not covered by said piezoelectric layer; and a microelectronic circuit on said portion of said filler material not covered by said piezoelectric layer.
Claim 24
Dependent Claim
121 words
A piezoelectric structure comprising: a substrate; a plurality of semiconductor islands on said substrate, each of said semiconductor islands comprising a first semiconductor material, wherein an interfacial surface of each of said semiconductor islands is adjacent said substrate and a growth surface of each of said islands is opposite said substrate; a filler material on said substrate and surrounding each of said semiconductor islands wherein said filler material comprises a material different from said first semiconductor material; a piezoelectric layer on at least one of said semiconductor islands wherein at least a portion of said filler material is not covered by said piezoelectric layer; and a microelectronic circuit on said portion of said filler material not covered by said piezoelectric layer.
Claim 25
Dependent Claim
58 words
A piezoelectric structure according to claim 21 wherein each of said plurality of semiconductor islands has a planar island surface opposite said substrate, and wherein said filler material has a planar filler surface adjacent said planar island surfaces opposite said substrate so that said planar filler surface and said planar semiconductor surfaces together define a smooth planar surface.
Claim 26
Dependent Claim
26 words
A piezoelectric structure according to claim 21 further comprising at least one pair of interdigitated electrodes on said piezoelectric layer adjacent one of said semiconductor islands.
Claim 27
Dependent Claim
26 words
A piezoelectric structure according to claim 21 further comprising at least one pair of interdigitated electrodes on said piezoelectric layer opposite one of said semiconductor islands.
Claim 28
Dependent Claim
59 words
A piezoelectric structure according to claim 21 wherein said first semiconductor material comprises diamond and wherein said filler material comprises a layer of a second semiconductor material having a planar single crystal surface adjacent said planar island surface opposite said substrate so that said planar island surface and said planar single crystal surface together define a smooth planar surface.
Claim 29
Dependent Claim
19 words
A piezoelectric structure according to claim 21 wherein said filler material comprises a layer of a second semiconductor material.
Claim 30
Dependent Claim
25 words
A piezoelectric structure according to claim 26 wherein said layer of said second semiconductor material comprises a single crystal layer of said second semiconductor material.
Claim 31
Dependent Claim
26 words
A piezoelectric structure according to claim 26 wherein said layer of said second semiconductor material extends from said substrate to a surface of said filler material.
Claim 32
Dependent Claim
22 words
A piezoelectric structure according to claim 28 wherein said substrate comprises a layer of said second semiconductor material adjacent said filler material.
Claim 33
Dependent Claim
14 words
A piezoelectric structure according to claim 26 wherein said second semiconductor material comprises silicon.
Claim 34
Dependent Claim
18 words
A piezoelectric structure according to claim 21 wherein said substrate comprises a material different from said filler material.
Claim 35
Dependent Claim
35 words
A piezoelectric structure according to claim 21 wherein said first semiconductor material is chosen from the group consisting of silicon carbide, carbon nitride, gallium nitride, aluminum nitride, boron nitride, and alloys of group III-V nitrides.
Claim 36
Dependent Claim
32 words
A piezoelectric structure according to claim 21 wherein said piezoelectric layer extends across said smooth planar surface covering at least two of said semiconductor islands and portions of said filler material therebetween.
Claim 37
Dependent Claim
27 words
A piezoelectric structure according to claim 21 wherein said microelectronic circuit is chosen from the group consisting of a transistor, a capacitor, a diode, and a resistor.
References Cited (Backward Citations)
US3816194A
Cited
US3849217A
Cited
US3925078A
Cited
US3761783A
Cited
US3896473A
Cited
US4643161A
Cited
US5422302A
Cited
US5013670A
Cited
US5010033A
Cited
JPS63307778A
Cited
US5131963A
Cited
JPH01222489A
Cited
JPH01261878A
Cited
US5006914A
Cited
JPH0316412A
Cited
US5278092A
Cited
US4966862A
Cited
US5066938A
Cited
US4952832A
Cited
JPH03262175A
Cited
US5471944A
Cited
US5223115A
Cited
US5329208A
Cited
US5355568A
Cited
JPH0590862A
Cited
US5420443A
Cited
JPH0621755A
Cited
US5391895A
Cited
US5300188A
Cited
US5272104A
Cited
US5440188A
Cited
US5686760A
Cited
US5514628A
Cited
US5672240A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-15 | 2002-08-17 | 2003-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-15 | 2006-08-17 | 2007-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-15 | 2010-08-17 | 2011-02-16 | $7700.00 | Window Closed / Lapsed |