US5652180A
Expired / Lapsed
US
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Method of manufacturing semiconductor device with contact structure
Assignee: Kawasaki Microelectronics Inc
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Filing: 1994-06-24
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Granted: 1997-07-29
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Expires: 2014-06-24
Abstract
Abstract A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film formed on the exposed surface of the silicide film at the bottom of the contact film, a plug formed in the contact hole by a selective Al CVD, and a metal wiring formed on the insulating film such that the metal wiring is electrically connected to the diffusion region by means of the plug, anti-diffusion film and silicide film. The anti-diffusion film may be formed by nitriding the surface of the silicide film.
Inventors
- 👤 Hiroshi Shinriki
- 👤 Hiroshi Yamamoto
- 👤 Nobuyuki Takeyasu
- 👤 Takayuki Komiya
- 👤 Tomohiro Ohta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:19
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
128 words
A method of manufacturing a semiconductor device having a contact structure, the contact structure comprising a conductive region formed on at least one of a junction formed in and a gate insulating film formed over a surface of a semiconductor substrate, a silicide film of high melting point metal formed on at least a portion of the conductive region, the method comprising the steps of: forming an insulating film over the conductive region, the insulating film having a contact hole; forming an anti-diffusion film by nitriding at least a portion of the surface of the silicide film in a nitriding atmosphere; and forming a plug containing aluminum in the contact hole by selective chemical vapor deposition such that a lower end of the plug contacts the anti-diffusion film.
Claim 2
Independent Claim
128 words
A method of manufacturing a semiconductor device having a contact structure, the contact structure comprising a conductive region formed on at least one of a junction formed in and a gate insulating film formed over a surface of a semiconductor substrate, a silicide film of high melting point metal formed on at least a portion of the conductive region, the method comprising the steps of: forming an insulating film over the conductive region, the insulating film having a contact hole; forming an anti-diffusion film by nitriding at least a portion of the surface of the silicide film in a nitriding atmosphere; and forming a plug containing aluminum in the contact hole by selective chemical vapor deposition such that a lower end of the plug contacts the anti-diffusion film.
Claim 3
Dependent Claim
29 words
A method according to claim 1, further comprising the step of forming the silicide film of high melting point metal prior to the step of forming the insulating film.
Claim 4
Dependent Claim
18 words
A method according to claim 1, wherein said high melting point metal of the silicide film is Ti.
Claim 5
Dependent Claim
33 words
A method according to claim 3, wherein said step of forming the anti-diffusion film is performed such that the thickness of the anti-diffusion film within a range from 2 nm to 50 nm.
Claim 6
Dependent Claim
43 words
A method according to claim 3, wherein said step of forming the anti-diffusion film is performed by using an atmosphere containing ammonia gas at a temperature within a range from 800° C. to 900° C. for a time not longer than 60 seconds.
Claim 7
Dependent Claim
52 words
A method according to claim 1, wherein the step of forming the insulating film having the contact hole is performed prior to the step of forming the anti-diffusion film such that a surface of the insulating film is simultaneously nitrided with the silicide film during the step of forming the anti-diffusion film.
Claim 8
Dependent Claim
27 words
A method according to claim 6, wherein, when the plug is formed by the selective chemical vapor deposition, substantially no aluminum is deposited on the insulating film.
Claim 9
Dependent Claim
22 words
A method according to claim 6, wherein the step of forming the plug comprises growing the plug solely from the anti-diffusion film.
Claim 10
Dependent Claim
25 words
A method according to claim 6, wherein the step of forming the plug comprises depositing substantially no aluminum on side walls of the contact hole.
Claim 11
Dependent Claim
29 words
A method according to claim 1, wherein the step of forming the insulating film having the contact hole is performed prior to the step of forming the anti-diffusion film.
Claim 12
Dependent Claim
18 words
A method according to claim 10, wherein said high melting point metal of the silicide film is titanium.
Claim 13
Dependent Claim
82 words
A method according to claim 1, wherein said step of forming the insulating film forms an insulating film having at least two contact holes having different depths; and said step of forming the plug further comprises the steps of: forming at least two plugs in said contact holes such that the deepest contact hole is filled with a corresponding one of the at least two plugs, and removing a part of each plug which protrudes from the surface of the insulating film.
Claim 14
Independent Claim
172 words
A method of manufacturing a semiconductor device having a contact structure, the contact structure comprising a conductive region formed on at least one of a junction formed in a surface of a semiconductor substrate and a gate insulating film formed over a surface of a semiconductor substrate, a silicide film of high melting point metal formed on at least a portion of the conductive region, the method comprising the steps of: forming an insulating film over the conductive region, the insulating film having a contact hole; forming an anti-diffusion film by nitriding at least a portion of the surface of the silicide film in a nitriding atmosphere; and forming a plug containing aluminum in the contact hole by selective chemical vapor deposition such that a lower end of the plug contacts the anti-diffusion film, wherein, when the plug is formed by the selective chemical vapor deposition, the selectivity of the chemical vapor deposition on the anti-diffusion film is enhanced relative to an anti-diffusion film formed other than by nitriding the silicide film.
Claim 15
Independent Claim
172 words
A method of manufacturing a semiconductor device having a contact structure, the contact structure comprising a conductive region formed on at least one of a junction formed in a surface of a semiconductor substrate and a gate insulating film formed over a surface of a semiconductor substrate, a silicide film of high melting point metal formed on at least a portion of the conductive region, the method comprising the steps of: forming an insulating film over the conductive region, the insulating film having a contact hole; forming an anti-diffusion film by nitriding at least a portion of the surface of the silicide film in a nitriding atmosphere; and forming a plug containing aluminum in the contact hole by selective chemical vapor deposition such that a lower end of the plug contacts the anti-diffusion film, wherein, when the plug is formed by the selective chemical vapor deposition, the selectivity of the chemical vapor deposition on the anti-diffusion film is enhanced relative to an anti-diffusion film formed other than by nitriding the silicide film.
Claim 16
Dependent Claim
25 words
A method according to claim 13, further comprising the step of selectively forming the silicide film of high melting point metal in said contact hole.
Claim 17
Dependent Claim
43 words
A method according to claim 14, wherein said silicide film of high melting point metal is TiSi x , and said step of selectively forming the silicide film is performed by a chemical vapor deposition using TiCl 4 gas and SiH 4 gas.
Claim 18
Dependent Claim
30 words
A method according to claim 14, further comprising the step of forming a second silicide film of high melting point metal prior to the step of forming the insulating film.
Claim 19
Dependent Claim
41 words
A method according to claim 16, wherein said silicide film of high melting point metal formed selectively in the contact hole is TiSi x , and is deposited by selective chemical vapor deposition using TiCl 4 gas and SiH 4 gas.
Claim 20
Dependent Claim
91 words
A method according to claim 14, wherein said step of forming the silicide film of high melting point metal comprises the steps of: forming a film of the high melting point metal at least on the conductive region exposed at the bottom of the contact hole; forming the silicide film by reacting the film of the high melting point metal and the conductive region; and removing an unreacted portion of the film of the high melting point metal such that the silicide film remains on the bottom of the contact hole.
Claim 21
Dependent Claim
14 words
A method according to claim 18, wherein said high melting point metal is titanium.
Claim 22
Dependent Claim
18 words
A method according to claim 13, wherein said high melting point metal of the silicide film is titanium.
Claim 23
Dependent Claim
34 words
A method according to claim 20, wherein the step of forming the anti-diffusion film is performed such that a thickness of the anti-diffusion film is within a range from 2 nm to 50 nm.
Claim 24
Dependent Claim
46 words
A method according to claim 20, wherein the step of forming the anti-diffusion film comprises forming the anti-diffusion film using an ambient atmosphere containing ammonia gas at a temperature within a range from 800° C. to 900° C. for a time not longer than sixty seconds.
Claim 25
Dependent Claim
22 words
A method according to claim 13, wherein the step of forming the plug comprises growing the plug solely from the anti-diffusion film.
Claim 26
Dependent Claim
18 words
A method according to claim 23, wherein said high melting point metal of the silicide film is titanium.
Claim 27
Dependent Claim
25 words
A method according to claim 13, wherein the step of forming the plug comprises depositing substantially no aluminum on side walls of the contact hole.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-07-28 | 2001-01-27 | 2001-07-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-28 | 2005-01-27 | 2005-07-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-07-28 | 2009-01-27 | 2009-07-29 | $7700.00 | Window Closed / Lapsed |