US5209816A
Expired / Lapsed
US
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Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing
Assignee: Round Rock Research LLC
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Filing: 1992-06-04
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Granted: 1993-05-11
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Expires: 2012-06-04
Abstract
Abstract A semiconductor processing method of chemical mechanical polishing an aluminum containing metal layer on a semiconductor substrate includes, a) providing a chemical mechanical polishing slurry comprising H 3 PO 4 at from about 0.1% to about 20% by volume; H 2 O 2 at from about 1% to about 30% by volume, H 2 O, and a solid abrasive material; and b) chemical mechanical polishing an aluminum containing metal layer on a semiconductor substrate with the slurry. Such process and slurry are also usable in chemical mechanical polishing of other layers, such as Ti, TiN and TiW materials. Such enables chemical mechanical polishing of a barrier metal/aluminum layer composite in a single polishing step, leading to increased controllability and resulting increased throughput. With respect to aluminum containing metal layers, the H 2 O 2 is understood to cause oxidation to aluminum oxide, which is subsequently removed by both chemical and mechanical action the result of the polish and slurry. Oxidizing agents other than H 2 O 2 are contemplated.
Inventors
- 👤 Chris C. Yu
- 👤 Trung T. Doan
- 👤 Alan E. Laulusa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 23:11
CPC Classifications
H; H10; H10P; H10P52/00; H10P52/40; H10P52/403
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
78 words
A semiconductor processing method of chemical mechanical polishing an aluminum containing metal layer on a semiconductor substrate comprising the following steps: providing a chemical mechanical polishing slurry comprising H 3 PO 4 at from about 0.1% to about 20% by volume; H 2 O 2 at from about 1% to about 30% by volume; H 2 O; and a solid abrasive material; and chemical mechanical polishing an aluminum containing metal layer on a semiconductor substrate with the slurry.
Claim 2
Dependent Claim
78 words
A semiconductor processing method of chemical mechanical polishing an aluminum containing metal layer on a semiconductor substrate comprising the following steps: providing a chemical mechanical polishing slurry comprising H 3 PO 4 at from about 0.1% to about 20% by volume; H 2 O 2 at from about 1% to about 30% by volume; H 2 O; and a solid abrasive material; and chemical mechanical polishing an aluminum containing metal layer on a semiconductor substrate with the slurry.
Claim 3
Dependent Claim
25 words
The chemical mechanical polishing method of claim 1 wherein the slurry comprises H 2 O 2 at from about 3% to about 9% by volume.
Claim 4
Dependent Claim
25 words
The chemical mechanical polishing method of claim 1 wherein the slurry comprises H 3 PO 4 at from about 3% to about 10% by volume.
Claim 5
Dependent Claim
39 words
The chemical mechanical polishing method of claim 1 wherein the slurry comprises H 2 O 2 at from about 3% to about 9% by volume, and H 3 PO 4 at from about 3% to about 10% by volume.
Claim 6
Dependent Claim
121 words
A semiconductor processing method of chemical mechanical polishing an aluminum containing metal layer on a semiconductor substrate comprising the following steps: providing a chemical mechanical polishing slurry comprising H 3 PO 4 at from about 0.1% to about 20% by volume; H 2 O 2 at from about 1% to about 30% by volume; H 2 O; and a solid abrasive material; applying the slurry onto an aluminum containing metal layer on a semiconductor substrate; polishing the aluminum containing metal layer having the applied slurry; reacting the aluminum of the metal layer with the H 2 O 2 of the slurry to form aluminum oxide; and chemically and mechanically removing aluminum oxide from the wafer with the slurry and polishing action.
Claim 7
Dependent Claim
121 words
A semiconductor processing method of chemical mechanical polishing an aluminum containing metal layer on a semiconductor substrate comprising the following steps: providing a chemical mechanical polishing slurry comprising H 3 PO 4 at from about 0.1% to about 20% by volume; H 2 O 2 at from about 1% to about 30% by volume; H 2 O; and a solid abrasive material; applying the slurry onto an aluminum containing metal layer on a semiconductor substrate; polishing the aluminum containing metal layer having the applied slurry; reacting the aluminum of the metal layer with the H 2 O 2 of the slurry to form aluminum oxide; and chemically and mechanically removing aluminum oxide from the wafer with the slurry and polishing action.
Claim 8
Dependent Claim
25 words
The chemical mechanical polishing method of claim 5 wherein the slurry comprises H 2 O 2 at from about 3% to about 9% by volume.
Claim 9
Dependent Claim
25 words
The chemical mechanical polishing method of claim 5 wherein the slurry comprises H 3 PO 4 at from about 3% to about 10% by volume.
Claim 10
Dependent Claim
39 words
The chemical mechanical polishing method of claim 5 wherein the slurry comprises H 2 O 2 at from about 3% to about 9% by volume, and H 3 PO 4 at from about 3% to about 10% by volume.
Claim 11
Dependent Claim
80 words
A semiconductor processing method of chemical mechanical polishing a layer on a semiconductor substrate, the layer comprising titanium, the method comprising the following steps: providing a chemical mechanical polishing slurry comprising H 3 PO 4 at from about 0.1% to about 20% by volume; H 2 O 2 at from about 1% to about 30% by volume; H 2 O; and a solid abrasive material; and chemical mechanical polishing a titanium containing layer on a semiconductor substrate with the slurry.
Claim 12
Dependent Claim
80 words
A semiconductor processing method of chemical mechanical polishing a layer on a semiconductor substrate, the layer comprising titanium, the method comprising the following steps: providing a chemical mechanical polishing slurry comprising H 3 PO 4 at from about 0.1% to about 20% by volume; H 2 O 2 at from about 1% to about 30% by volume; H 2 O; and a solid abrasive material; and chemical mechanical polishing a titanium containing layer on a semiconductor substrate with the slurry.
Claim 13
Dependent Claim
32 words
The chemical mechanical polishing method of claim 9 wherein the form of titanium of the titanium layer is selected from the group consisting of elemental titanium, TiN and TiW, or mixtures thereof.
Claim 14
Dependent Claim
25 words
The chemical mechanical polishing method of claim 9 wherein the slurry comprises H 2 O 2 at from about 3% to about 9% by volume.
Claim 15
Dependent Claim
25 words
The chemical mechanical polishing method of claim 9 wherein the slurry comprises H 3 PO 4 at from about 3% to about 10% by volume.
Claim 16
Dependent Claim
39 words
The chemical mechanical polishing method of claim 9 wherein the slurry comprises H 2 O 2 at from about 3% to about 9% by volume, and H 3 PO 4 at from about 35 to about 10% by volume.
Claim 17
Independent Claim
94 words
A method of processing a semiconductor wafer comprising the following steps: providing a barrier layer comprising titanium atop a semiconductor wafer; providing a metal layer comprising aluminum atop the barrier layer; providing a chemical mechanical polishing slurry comprising H 3 PO 4 at from about 0.1% to about 20% by volume; H 2 O 2 at from about 1% to about 30% by volume; H 2 O; and a solid abrasive material; and chemical mechanical polishing the aluminum containing metal layer and barrier layer with the slurry in a single chemical mechanical polishing step.
Claim 18
Independent Claim
94 words
A method of processing a semiconductor wafer comprising the following steps: providing a barrier layer comprising titanium atop a semiconductor wafer; providing a metal layer comprising aluminum atop the barrier layer; providing a chemical mechanical polishing slurry comprising H 3 PO 4 at from about 0.1% to about 20% by volume; H 2 O 2 at from about 1% to about 30% by volume; H 2 O; and a solid abrasive material; and chemical mechanical polishing the aluminum containing metal layer and barrier layer with the slurry in a single chemical mechanical polishing step.
Claim 19
Dependent Claim
27 words
The method of processing a semiconductor wafer of claim 14 wherein the slurry comprises H 2 O 2 at from about 3% to about 9% by volume.
Claim 20
Dependent Claim
27 words
The method of processing a semiconductor wafer of claim 14 wherein the slurry comprises H 3 PO 4 at from about 3% to about 10% by volume.
Claim 21
Dependent Claim
41 words
The method of processing a semiconductor wafer of claim 14 wherein the slurry comprises H 2 O 2 at from about 3% to about 9% by volume, and H 3 PO 4 at from about 3% to about 10% by volume.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-05-10 | 1996-11-09 | 1997-05-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-10 | 2000-11-09 | 2001-05-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-10 | 2004-11-09 | 2005-05-11 | $7700.00 | Window Closed / Lapsed |