EP0097848A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for manufacturing semiconductor device
Assignee: Toshiba Corp
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Filing: 1983-06-08
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Granted: —
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Expires: 2003-06-08
Abstract
Abstract A semiconductor device is manufactured by selectively removing an insulating film (28) which covers at least one conductive layer (24, 26, 27) to form at least one contact hole (29) partially exposing the conductive layer (24, 26, 27). Then, a layer of an inorganic conductive material having a melting point lower than the material comprising the conductive layer (24, 26, 27) is formed on a surface of the insulating film (28) and is melted to fill the contact hole (29) with the inorganic conductive material. Finally a wiring layer (32) is formed in contact with the inorganic conductive material filled in the contact hole (29).
Inventors
- 👤 Katsuya Okumura
- 👤 Toshinori Shinki
- 👤 Takashi Sato
- 👤 Masaaki Ueda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 23:54
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/059; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10W20/062
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
135 words
A method for manufacturing a semiconductor device comprising the steps of selectively removing an insulating film which covers at least one conductive layer to form at least one contact hole partially exposing said conductive layer; and forming a wiring layer which electrically contacts said conductive layer through said contact hole, characterized in that, after said contact hole (29, 55) is formed, a layer (30, 56) of an inorganic conductive material having a melting point lower than the material comprising said conductive layer (24, 26, 27, 52) is formed on a surface of said insulating film (28, 53), and is melted to fill said contact hole (29, 55) with said inorganic conductive material; and then the wiring layer (32, 57) is formed in contact with said inorganic conductive material filled in said contact hole (29, 55).
Claim 2
Independent Claim
135 words
A method for manufacturing a semiconductor device comprising the steps of selectively removing an insulating film which covers at least one conductive layer to form at least one contact hole partially exposing said conductive layer; and forming a wiring layer which electrically contacts said conductive layer through said contact hole, characterized in that, after said contact hole (29, 55) is formed, a layer (30, 56) of an inorganic conductive material having a melting point lower than the material comprising said conductive layer (24, 26, 27, 52) is formed on a surface of said insulating film (28, 53), and is melted to fill said contact hole (29, 55) with said inorganic conductive material; and then the wiring layer (32, 57) is formed in contact with said inorganic conductive material filled in said contact hole (29, 55).
Claim 3
Dependent Claim
23 words
A method according to claim 1, characterized in that said contact hole is formed by anisotropic etching and has a steep side wall.
Claim 4
Dependent Claim
19 words
A method according to claim 2, characterized in that said inorganic conductive material layer is formed by vacuum deposition.
Claim 5
Dependent Claim
51 words
A method according to claim 3, characterized in that the step (b) comprises depositing said inorganic conductive material on an entire surface of said insulating layer and selectively removing said inorganic conductive material layer to leave part thereof only over said contact hole, including a peripheral portion of said contact hole.
Claim 6
Dependent Claim
29 words
A method according to claim 4, characterized in that said part of said inorganic conductive material layer has a volume sufficient to substantially fill up said contact hole therewith.
Claim 7
Dependent Claim
32 words
A method according to claim 3, characterized in that the step (c) comprises removing said inorganic conductive material layer left on said insulating film after said inorganic conductive material layer is melted.
Claim 8
Dependent Claim
20 words
A method according to claim 3, characterized in that said inorganic conductive material layer is melted in a nonoxidizing atmosphere.
Claim 9
Dependent Claim
26 words
A method according to claim 7, characterized in that said nonoxidizing atmosphere comprises a gaseous oxidizing component at a pressure of no more than 10-7 Torr.
Claim 10
Dependent Claim
18 words
A method according to claim 7, characterized in that said inorganic conductive material comprises an aluminum-based metallic material.
Claim 11
Dependent Claim
25 words
A method according to claim 3, characterized in that said conductive layer comprises a semiconductor region formed by doping an impurity in a semiconductor substrate.
Claim 12
Dependent Claim
16 words
A method according to claim 10, characterized in that said semiconductor substrate is a silicon substrate.
Claim 13
Dependent Claim
18 words
A method according to claim 11, characterized in that said inorganic conductive material comprises an aluminum-based metallic material.
Claim 14
Dependent Claim
65 words
A method according to claim 12, characterized by further comprising forming a layer of a refractory metal selected from the group consisting of platinum, palladium, hafnium, tantalum, titanium, nickel, niobium, zirconium, vanadium, molybdenum and tungsten; an alloy thereof; or a silicide thereof on at least a surface portion of said semiconductor substrate exposed through said contact hole, before said inorganic conductive material layer is formed.
Claim 15
Dependent Claim
16 words
A method according to claim 3, characterized in that said conductive layer comprises a wiring layer.
Claim 16
Dependent Claim
26 words
A method according to claim 3, characterized in that said inorganic conductive material is selected from the group consisting of an aluminum-based metallic material and tin.
Claim 17
Independent Claim
110 words
A method for forming a wiring layer on an insulating film comprising the steps of forming an insulating film having a steep stepped portion on a conductive layer; and forming a wiring layer over said stepped portion, characterized in that, after the formation of said insulating film, a layer of an inorganic conductive material having a melting point lower than a melting point of the material comprising said conductive layer is formed; said inorganic conductive material layer is melted to cover inside corners of said stepped portion; and then the wiring layer is formed in contact with said inorganic conductive material layer covering said inside corners of said stepped portion.
Claim 18
Independent Claim
110 words
A method for forming a wiring layer on an insulating film comprising the steps of forming an insulating film having a steep stepped portion on a conductive layer; and forming a wiring layer over said stepped portion, characterized in that, after the formation of said insulating film, a layer of an inorganic conductive material having a melting point lower than a melting point of the material comprising said conductive layer is formed; said inorganic conductive material layer is melted to cover inside corners of said stepped portion; and then the wiring layer is formed in contact with said inorganic conductive material layer covering said inside corners of said stepped portion.
References Cited (Backward Citations)
US4258078A
Cited
EP0019781A2
Cited
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