Process for forming low resistance aluminum plug in via electrically connected to overlying patterned metal layer for integrated circuit structures

Claim 2

A process for forming a low resistive aluminum plug in a via in an insulating layer of an integrated circuit structure and a patterned conductive layer over said insulating layer and electrically connected to said aluminum plug which comprises: a) providing an insulating layer having one or more vias therein to underlying portions of said integrated circuit structure; b) depositing sufficient aluminum over said structure to fill said one or more vias with aluminum plugs and to form an aluminum layer over said insulating layer, utilizing a deposition temperature of at least 400° C. or higher for at least a portion of the aluminum deposition; c) removing said aluminum layer from said surface of said insulating layer, while leaving said aluminum plugs in said one or more vias; and d) forming one or more patternable conductive layers over said insulating layer and said one or more vias, and electrically connected to said aluminum plugs, including depositing a layer of aluminum at a temperature of less than 350° C.

Claim 3

The process of claim 1 wherein said step of forming said one or more patternable conductive layers over said insulating layer further comprises forming at least two patternable conductive layers over said insulating layer.

Claim 4

The process of claim 1, wherein said step of forming said one or moret- patternable conductive layers over said insulating layer further comprises the steps of: (a) forming a first conductive layer over said insulating layer; (b) depositing a layer of aluminum over said first conductive layer at a deposition temperature of less than 350° C.; and (c) forming a third conductive layer over said aluminum layer.

Claim 5

The process of claim 1 wherein said step of depositing sufficient aluminum over said structure to fill said one or more vias with aluminum plugs and to form an aluminum layer over said insulating layer further comprises using an aluminum deposition temperature of at least about 450° C.; and said step of forming one or more patternable conductive layers over said insulating layer further comprises forming said one or more patternable conductive layers at a temperature less than 350° C.

Claim 6

The process of claim 1 wherein said step of forming said one or more patternable conductive layers over said insulating layer further comprises the steps of: (a) forming a first conductive layer over said insulating layer; (b) depositing a layer of aluminum over said first conductive layer at a deposition temperature of less than 350° C.; and (c) forming a third layer over said aluminum layer.

Claim 7

The process of claim 1 wherein said step of forming said one or more patternable conductive layers over said insulating layer further comprises the steps of: (a) forming a first conductive layer over said insulating layer selected from the group consisting of titanium, titanium-tungsten, and titanium nitride; (b) depositing a layer of aluminum over said first conductive layer at a deposition temperature of less than 350° C.; and (c) forming a third layer over said aluminum layer selected from the group consisting of titanium, titanium-tungsten, and titanium nitride.

Claim 8

The process of claim 1 wherein said step of depositing sufficient aluminum over said structure to fill said one or more vias with aluminum plugs and to form an aluminum layer over said insulating layer further comprises the steps of: a) first sputtering aluminum over said structure during a first deposition phase while maintaining a power level equivalent to from about 9 to about 17 kilowatts for a six inch diameter wafer; b) then sputtering aluminum over said structure during a second deposition phase while maintaining a power lever equivalent to from about 1 to about 3 kilowatts for a six inch diameter wafer; and c) then sputtering aluminum over said structure during a third deposition phase while maintaining a power level equivalent to from about 4 to about 17 kilowatts for a six inch diameter wafer.

Claim 9

The process of claim 7 wherein said first deposition phase is carried out for a period of from about 0.1 to about 3.0 minutes.

Claim 10

The process of claim 7 wherein said second deposition phase is carried out for a period of from about 0.1 to about 10 minutes.

Claim 11

A process of claim 7 wherein said third deposition phase is carried out for a period of from about 0.3 to about 0.4 minutes.

Claim 12

The process of claim 7 wherein said first deposition phase is carried out while maintaining said wafer at a temperature of less than about 200° c.

Claim 13

The process of claim 7 wherein said second and third deposition phases are carried out while maintaining said wafer at a temperature of from about 400° C. to about 600° C.

Claim 14

A process for forming a low resistance aluminum plug in a via in an insulating layer of an integrated circuit structure and a patterned conductive layer over said insulating layer and in electrical connection with said aluminum plug which comprises: a) providing an insulating layer having one or more vias therein to underlying portions of said integrated circuit structure; b) depositing sufficient aluminum over said structure to fill said one or more vias with aluminum plugs and to form an aluminum layer over said insulating layer, utilizing a deposition temperature of at least 400° C. or higher for at least a portion of the aluminum deposition; c) removing said aluminum layer from said surface of said insulating layer, while leaving said aluminum plugs in said one or more vias; and d) forming one or more patternable conductive layers over said insulating layer and said one or more vias, and in electrical connection with said aluminum plugs, including the formation of an aluminum layer at a temperature of less than 350° C.

Claim 15

A process for forming a low resistance aluminum plug in a via in an insulating layer of an integrated circuit structure and a patterned conductive layer over said insulating layer and in electrical connection with said aluminum plug which comprises: a) providing an insulating layer having one or more vias therein to underlying portions of said integrated circuit structure; b) depositing sufficient aluminum over said structure to fill said one or more vias with aluminum plugs and to form an aluminum layer over said insulating layer, utilizing a deposition temperature of at least 400° C. or higher for at least a portion of the aluminum deposition; c) removing said aluminum layer from said surface of said insulating layer, while leaving said aluminum plugs in said one or more vias; and d) forming one or more patternable conductive layers over said insulating layer and said one or more vias, and in electrical connection with said aluminum plugs, including the formation of an aluminum layer at a temperature of less than 350° C.

Claim 16

A process for forming a low resistance aluminum plug in a via in an insulating layer of an integrated circuit structure and a patterned conductive layer over said insulating layer and in electrical communication with said aluminum plug which comprises: a) providing an insulating layer having one or more vias therein to underlying portions of said integrated circuit structure; b) depositing sufficient aluminum over said structure to fill said one or more vias with aluminum plugs and to form an aluminum layer over said insulating layer, utilizing a deposition temperature of at least 400° C. or higher for at least a portion of the aluminum deposition; c) removing said aluminum layer from said surface of said insulating layer, while leaving said aluminum plugs in said one or more vias; and d) forming a first patternable conductive layer over said insulating layer selected from the group consisting of titanium, titanium-tungsten, and titanium nitride; e) depositing a patternable layer of aluminum over said first conductive layer at a deposition temperature of less than 350° C.; and f) forming a third patternable conductive layer over said aluminum layer selected from the group consisting of titanium, titanium-tungsten, and titanium nitride.

Claim 17

A process for forming a low resistance aluminum plug in a via in an insulating layer of an integrated circuit structure and a patterned conductive layer over said insulating layer and in electrical communication with said aluminum plug which comprises: a) providing an insulating layer having one or more vias therein to underlying portions of said integrated circuit structure; b) depositing sufficient aluminum over said structure to fill said one or more vias with aluminum plugs and to form an aluminum layer over said insulating layer, utilizing a deposition temperature of at least 400° C. or higher for at least a portion of the aluminum deposition; c) removing said aluminum layer from said surface of said insulating layer, while leaving said aluminum plugs in said one or more vias; and d) forming a first patternable conductive layer over said insulating layer selected from the group consisting of titanium, titanium-tungsten, and titanium nitride; e) depositing a patternable layer of aluminum over said first conductive layer at a deposition temperature of less than 350° C.; and f) forming a third patternable conductive layer over said aluminum layer selected from the group consisting of titanium, titanium-tungsten, and titanium nitride.

Claim 18

A process for forming a low resistance aluminum plug in a via in an insulating layer of an integrated circuit structure and a patterned conductive layer over said insulating layer and electrically connected to said aluminum plug which comprises: a) providing an insulating layer having one or more vias therein to underlying portions of an integrated circuit structure; b) depositing sufficient aluminum over said structure to fill said one or more vias with aluminum plugs and to form an aluminum layer over said insulating layer by the steps of: i) sputtering aluminum over said structure during a first deposition phase of from about 0.1 to about 3.0 minutes, while maintaining a power level equivalent to from about 9 to about 17 kilowatts for a six inch diameter wafer, and while maintaining said wafer at a temperature of less than about 200° C.; ii) then sputtering aluminum over said structure during a second deposition phase of from about 0.1 to about 10 minutes, while maintaining a power level equivalent to from about 1 to about 3 kilowatts for a six inch diameter wafer, and while maintaining said wafer at a temperature of from about 400° C. to about 600° C.; iii) then sputtering aluminum over said structure during a third deposition phase of from about 0.3 to about 0.4 minutes, while maintaining a power level equivalent to from about 4 to about 17 kilowatts for a six inch diameter wafer, and while still maintaining said wafer at a temperature of from about 400° C. to about 600° C.; c) removing said aluminum layer from said surface of said insulating layer, while leaving said aluminum plugs in said one or more vias; and d) then forming one or more patternable conductive layers over said insulating layer and said one or more vias, and electrically connected to said aluminum plugs therein.

Claim 19

A process for forming a low resistance aluminum plug in a via in an insulating layer of an integrated circuit structure and a patterned conductive layer over said insulating layer and electrically connected to said aluminum plug which comprises: a) providing an insulating layer having one or more vias therein to underlying portions of an integrated circuit structure; b) depositing sufficient aluminum over said structure to fill said one or more vias with aluminum plugs and to form an aluminum layer over said insulating layer by the steps of: i) sputtering aluminum over said structure during a first deposition phase of from about 0.1 to about 3.0 minutes, while maintaining a power level equivalent to from about 9 to about 17 kilowatts for a six inch diameter wafer, and while maintaining said wafer at a temperature of less than about 200° C.; ii) then sputtering aluminum over said structure during a second deposition phase of from about 0.1 to about 10 minutes, while maintaining a power level equivalent to from about 1 to about 3 kilowatts for a six inch diameter wafer, and while maintaining said wafer at a temperature of from about 400° C. to about 600° C.; iii) then sputtering aluminum over said structure during a third deposition phase of from about 0.3 to about 0.4 minutes, while maintaining a power level equivalent to from about 4 to about 17 kilowatts for a six inch diameter wafer, and while still maintaining said wafer at a temperature of from about 400° C. to about 600° C.; c) removing said aluminum layer from said surface of said insulating layer, while leaving said aluminum plugs in said one or more vias; and d) then forming one or more patternable conductive layers over said insulating layer and said one or more vias, and electrically connected to said aluminum plugs therein.

Claim 20

A process for forming a low resistance aluminum plug in a via in an insulating layer of an integrated circuit structure and a patterned conductive layer over said insulating layer and in electrical connection with said aluminum plug which comprises: a) providing an insulating layer having one or more vias therein to underlying portions of an integrated circuit structure; b) depositing sufficient aluminum over said structure to fill said one or more vias with aluminum plugs and to form an aluminum layer over said insulating layer at an aluminum deposition temperature of at least about 400° C. during a portion of said deposition; c) removing said aluminum layer from said surface of said insulating layer, while leaving said aluminum plugs in said one or more vias; and d) forming, at a temperature of less than about 350° C., one or more conductive layers, including at least one patternable layer of aluminum, over said insulating layer and said one or more vias, and electrically connected to said aluminum plugs therein.

Claim 21

A process for forming a low resistance aluminum plug in a via in an insulating layer of an integrated circuit structure and a patterned conductive layer over said insulating layer and in electrical connection with said aluminum plug which comprises: a) providing an insulating layer having one or more vias therein to underlying portions of an integrated circuit structure; b) depositing sufficient aluminum over said structure to fill said one or more vias with aluminum plugs and to form an aluminum layer over said insulating layer at an aluminum deposition temperature of at least about 400° C. during a portion of said deposition; c) removing said aluminum layer from said surface of said insulating layer, while leaving said aluminum plugs in said one or more vias; and d) forming, at a temperature of less than about 350° C., one or more conductive layers, including at least one patternable layer of aluminum, over said insulating layer and said one or more vias, and electrically connected to said aluminum plugs therein.

Claim 22

A process for forming a low resistance aluminum plug in a via in an insulating layer of an integrated circuit structure and a patterned conductive layer over said insulating layer and in electrical connection with said aluminum plug which comprises: a) providing an insulating layer having one or more vias therein to underlying portions of an integrated circuit structure; b) depositing, in more than one deposition phase, sufficient aluminum over said structure to fill said one or more vias with aluminum plugs and to form an aluminum layer over said insulating layer, said deposition phases including at least one deposition phase having an aluminum deposition temperature of at least about 400° C.; c) removing said aluminum layer from said surface of said insulating layer, while leaving said aluminum plugs in said one or more vias; and d) forming, at a temperature of less than about 350° C., at least one patternable layer of aluminum over said insulating layer and said one or more vias, and electrically connected to said aluminum plugs therein.

Claim 23

A process for forming a low resistance aluminum plug in a via in an insulating layer of an integrated circuit structure and a patterned conductive layer over said insulating layer and in electrical connection with said aluminum plug which comprises: a) providing an insulating layer having one or more vias therein to underlying portions of an integrated circuit structure; b) depositing, in more than one deposition phase, sufficient aluminum over said structure to fill said one or more vias with aluminum plugs and to form an aluminum layer over said insulating layer, said deposition phases including at least one deposition phase having an aluminum deposition temperature of at least about 400° C.; c) removing said aluminum layer from said surface of said insulating layer, while leaving said aluminum plugs in said one or more vias; and d) forming, at a temperature of less than about 350° C., at least one patternable layer of aluminum over said insulating layer and said one or more vias, and electrically connected to said aluminum plugs therein.