US4871691A
Expired / Lapsed
US
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Selective deposition process of a refractory metal silicide onto silicon areas
Assignee: Centre National de la Recherche Scientifique
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Filing: 1988-11-08
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Granted: 1989-10-03
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Expires: 2008-11-08
Abstract
Abstract A selective deposition process of a refractory metal silicide onto the silicon apparent surfaces of a wafer partially coated with SiO 2 , comprising the following steps: flowing in a cold-wall airtight chamber comprising said wafer a gaseous silane composite at a partial pressure P Si .sbsb.x H .sbsb.y and an halogenide of said metal at a partial pressure P Me ; heating the wafer to a first temperature (T1) for a first duration (t1), P Si .sbsb.x H .sbsb.y and P Me being chosen so as to allow a metal silicide deposition to be formed on the wafer, the silicon being overstoichiometric; and, heating the wafer to a second temperature (T2) lower than the first one for a second duration (t2), T2 being chosen as a function of P Si .sbsb.x H .sbsb.y and P Me so as to allow a stoichiometric metal silicide deposition to be formed on the wafer.
Inventors
- 👤 Joaquim Torres
- 👤 Roland Madar
- 👤 Claude Bernard
- 👤 Jean-Francois Million-Brodaz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:18
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/42; H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; Y; Y10; Y10S; Y10S148/00; Y10S148/147
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
145 words
A selective deposition method of a refractory metal silicide onto the apparent silicon surfaces of a wafer partially coated with SiO 2 , comprising the following steps: flowing inside a cold-wall airtight chamber comprising said wafer a gaseous silane composite at a first partial pressure P Si xHy l and an halogenide of said metal at a second partial pressure P Me ; heating the wafer to a first temperature (T1) for a first duration (t1), T1, P Si x Hyand P Me being chosen so as to allow a metal silicide deposition to be formed on the wafer, silicon being overstoichiometric; and heating the wafer to a second temperature (T2) lower than the first one for a second duration (t2), T2 being chosen as a function of P Si x H y and P Me so as to allow a stoichiometric metal silicide deposition.
Claim 2
Dependent Claim
145 words
A selective deposition method of a refractory metal silicide onto the apparent silicon surfaces of a wafer partially coated with SiO 2 , comprising the following steps: flowing inside a cold-wall airtight chamber comprising said wafer a gaseous silane composite at a first partial pressure P Si xHy l and an halogenide of said metal at a second partial pressure P Me ; heating the wafer to a first temperature (T1) for a first duration (t1), T1, P Si x Hyand P Me being chosen so as to allow a metal silicide deposition to be formed on the wafer, silicon being overstoichiometric; and heating the wafer to a second temperature (T2) lower than the first one for a second duration (t2), T2 being chosen as a function of P Si x H y and P Me so as to allow a stoichiometric metal silicide deposition.
Claim 3
Dependent Claim
14 words
A silicide selective deposition process according to claim 1, wherein the metal is titanium.
Claim 4
Dependent Claim
36 words
A silicide selective deposition process according to claim 1, wherein the partial pressures P Si x Hyand P Me are chosen so as to be located within a predetermined region of the phase charts (FIG. 4).
Claim 5
Dependent Claim
50 words
A silicide selective deposition process according to claim 1, wherein the first duration (t1) is comprised between 1 and 30 seconds, the second duration (t2) between 1/2 and a few minutes, the first temperature (T1) between 700° and 1,000° C., and the second temperature (T2) between 450° and 700° C.
Claim 6
Dependent Claim
23 words
A silicide selective deposition process according to claim 1, wherein the reactive gaseous medium is submitted to an ultraviolet radiation during the process.
Claim 7
Dependent Claim
32 words
A silicide selective deposition process, wherein, in addition to the active gases mentioned in claim 1, a neutral gas such as argon and possibly hydrogen is allowed to flow in the chamber.
Claim 8
Dependent Claim
18 words
A silicide selective deposition process according to claim 1, wherein said gaseous silane composite is SiH 4 .
Claim 9
Dependent Claim
20 words
A silicide selective deposition process according to claim 1, wherein said gaseous silane composite is Si 2 H 6 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-02 | 1993-04-03 | 1993-10-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-02 | 1997-04-03 | 1997-10-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-02 | 2001-04-03 | 2001-10-03 | $7700.00 | Window Closed / Lapsed |