EP0245934A2
Expired / Lapsed
EP
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Low pressure chemical vapor deposition of metal silicide
Assignee: Varian Medical Systems Inc
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Filing: 1987-03-27
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Granted: —
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Expires: 2007-03-27
Abstract
Abstract The invention relates to a process for the low pressure chemical vapor deposition (LPCVD) of metal silicide, especially molybdenum silicide, on a substrate at a low temperature. The walls of a LPCVD reactor which contains a heated pedestal for holding a substrate are cooled and the pedestal is heated so the substrate temperature reaches a desired level, depending on the metal silicide to be deposited. A metal halide and a silane or disilane are fed separately into the deposition chamber and mixed behind a small baffle plate at the entrance. The metal silicide is deposited on the substrate surface. It is preferred that the substrate be pre-treated with H2 plasma before deposition.
Inventors
- 👤 Peter J. Gaczi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 09:53
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/42; H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
114 words
A process for the low vapor deposition of a metal silicide film on a substrate at a reduced temperature, which comprises: (a) maintaining the substrate at a temperature of from about 40°C to about 500°C in a reactor whose walls are cooled, and (b) simultaneously introducing into the reactor a metal compound selected from the group consisting of MoF₆, WF₆, TaCl₄ and TiCl₄ and a silicon compound selected from the group consisting of SiH₄ and Si₂H₆, with the proviso that when the metal compound is WF₆, TaCl₄ or TiCl₄, the silicon compound is Si₂H₆, such that a metal silicide film having a silicon:metal ratio of less than about 2.3 is deposited on said substrate.
Claim 2
Dependent Claim
114 words
A process for the low vapor deposition of a metal silicide film on a substrate at a reduced temperature, which comprises: (a) maintaining the substrate at a temperature of from about 40°C to about 500°C in a reactor whose walls are cooled, and (b) simultaneously introducing into the reactor a metal compound selected from the group consisting of MoF₆, WF₆, TaCl₄ and TiCl₄ and a silicon compound selected from the group consisting of SiH₄ and Si₂H₆, with the proviso that when the metal compound is WF₆, TaCl₄ or TiCl₄, the silicon compound is Si₂H₆, such that a metal silicide film having a silicon:metal ratio of less than about 2.3 is deposited on said substrate.
Claim 3
Dependent Claim
24 words
The process as claimed in claim 1 wherein said substrate is subjected to a H₂ plasma treatment in the reactor prior to step (b).
Claim 4
Dependent Claim
29 words
A process as claimed in claim 1 or claim 2, wherein the metal compound is MoF₆ and is introduced at a flow rate of between 2 and 10 sccm.
Claim 5
Dependent Claim
31 words
A process as claimed in claim 3 wherein the temperature is between 40°c and 170°C and the silicon compound is introduced at a flow rate of between 15 and 145 sccm.
Claim 6
Dependent Claim
29 words
The process of any one of claims 1 to 4 wherein the metal compound is MoF₆, the silicon compound is SiH₄, and the temperature is from 90°C to 170°C.
Claim 7
Dependent Claim
13 words
The process of claim 5 wherein said temperature is from 120°C to 160°C.
Claim 8
Dependent Claim
29 words
The process of any one of claims 1 to 4 wherein the metal compound is MoF₆, the silicon compound is Si₂H₆, and the temperature is from 40°C to 90°C.
Claim 9
Dependent Claim
22 words
The process of claim 1 or claim 2 wherein the metal compound is WF₆ and the temperature is from 180°C to 250°C.
Claim 10
Dependent Claim
24 words
The process of claim 1 or claim 2 wherein the metal compound is TaCl₄ or TiCl₄ and the temperature is from 350°C to 500°C.
Claim 11
Dependent Claim
13 words
The process of claim 9 wherein said temperature is from 350°C to 400°C.
Claim 12
Dependent Claim
15 words
The process of any preceding claim wherein the silicon:metal ratio is from 1.7 to 2.3.
References Cited (Backward Citations)
No citation records indexed.
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