EP0448276A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Integrated circuit interconnection
Assignee: AT&T Inc
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Filing: 1991-03-13
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Granted: —
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Expires: 2011-03-13
Abstract
Abstract An integrated circuit and method of fabrication are disclosed. The invention provides an etch-stop layer between a plug formed in a via and an overlying runner. The etch stop layer serves a variety of functions, including protecting the plug during the etching process which defines the runner.
Inventors
- 👤 Ajit Singh Manocha
- 👤 Virendra Vir Singh Rana
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 02:23
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/037; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10W20/056; H10W20/063; H10W20/0633; H10W20/069; H10W20/0693; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
113 words
A method of integrated circuit fabrication comprising the steps of: forming a patterned dielectric layer (e.g., 21) having at least one opening (e.g., 13); at least partially filling said opening (e.g., 13) with a a first material (e.g., 31 ); forming a second material layer (e.g., 41) in contact with said first material layer (e.g., 31 ) and with said dielectric layer (e.g., 21 ); forming a third material layer (e.g., 51 ) on top of said second material layer (e.g., 41); patterning, by a process which includes etching, said third material layer (e.g., 51), said second material layer (e.g., 41) serving as an etch stop; patterning said second material layer (e.g., 41).
Claim 2
Dependent Claim
25 words
The method of claim 1 wherein said patterned third material layer (e.g., 51) serves to define the pattern of said second material layer (e.g., 41).
Claim 3
Dependent Claim
22 words
The method of claim 1 in which said opening (e.g., 13) is substantially completely filled by said first material (e. g., 31).
Claim 4
Dependent Claim
32 words
The method of claim 1 in which said first material (e.g., 31 ) is chosen from the group consisting of tungsten, aluminum, aluminum-rich mixtures, aluminum-rich alloys, copper, copper-rich mixtures, and copper-rich alloys.
Claim 5
Dependent Claim
27 words
The method of claim 1 in which said second material (e.g., 41 ) is chosen from the group consisting of tungsten silicide, titanium tungsten and titanium nitride.
Claim 6
Dependent Claim
35 words
The method of claim 1 in which said third material (e.g., 51) is chosen from the group consisting of tungsten, tungsten-rich mixtures, tungsten-rich alloys, aluminum, aluminum-rich mixtures, aluminum-rich alloys, copper, copper-rich mixtures, and copper-rich alloys.
Claim 7
Dependent Claim
35 words
The method of claim 1 in which said third material layer is patterned to form at least two runners (e.g., 155, 157) and said second material (e.g., 413) is patterned to connect both said runners.
References Cited (Backward Citations)
No citation records indexed.
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