Micromechanical switch with insulated switch contact

Claim 2

An insulated micromechanical switch comprising: a substrate; a source contact mounted on said substrate; a gate contact mounted on said substrate; a drain contact having a first drain electrode and a second drain electrode, said drain contact mounted on said substrate; a deflectable beam comprising: a conductive beam body having a first end and a second end, said first end of said beam body attached to said source contact, said second end of said beam body overhanging said gate contact; a beam contact overhanging said drain contact; and an insulator joining and electrically insulating said second end of said beam body and said beam contact; and wherein said beam is deflectable between a first position in which said beam contact is in electrical communication with said drain contact in response to an electrical field of a first strength established between said gate electrode and said conductive beam body, to a second position in which said beam contact is isolated from said drain contact in response to an electrical field of a second strength established between said gate electrode and said conductive beam body.

Claim 3

The insulated micromechanical switch of claim 1, wherein said substrate comprises silicon or glass.

Claim 4

The insulated micromechanical switch of claim 1, wherein said beam body comprises nickel, gold, chrome, chromium, copper or iron.

Claim 5

The insulated micromechanical switch of claim 1, wherein said insulator comprises polyimide, PMMA, silicon nitride or silicon oxide.

Claim 6

The insulated micromechanical switch of claim 1, wherein said contacts comprise platinum, palladium, titanium/tungsten, rhodium or gold.

Claim 7

The insulated micromechanical switch of claim 1, wherein said beam has a length of between 5 μm and 20 μm.

Claim 8

The insulated micromechanical switch of claim 1, wherein said insulated micromechanical switch is incorporated into an electrical circuit.

Claim 9

An insulated micromechanical switch, comprising: a substrate; a source electrode mounted on said substrate; a gate contact comprising a first gate electrode and a second gate electrode, said gate contact mounted on said substrate adjacent said source electrode, said first gate electrode and said second gate electrode separated by a channel; a drain contact comprising a first drain electrode and a second drain electrode mounted on said substrate adjacent said gate contact; a non-conductive deflectable beam mounted on said source electrode and overhanging said gate contact and said drain electrodes, said beam comprising an upper electrode layer and an upper contact layer, said upper electrode layer positioned on said beam over said gate contact and said upper contact layer positioned on said beam over said drain contact, said beam electrically insulating said upper contact layer from said upper electrode layer; and wherein said beam is deflectable between a first position wherein said upper contact layer is in electrical communication with said drain electrodes in response to an electrical field of a first strength established between said first gate electrode and said second gate electrode, to a second position wherein said upper contact layer is isolated from said drain electrodes in response to an electrical field of a second strength established between said first gate electrode and said second gate electrode.

Claim 10

An insulated micromechanical switch, comprising: a substrate; a source electrode mounted on said substrate; a gate contact comprising a first gate electrode and a second gate electrode, said gate contact mounted on said substrate adjacent said source electrode, said first gate electrode and said second gate electrode separated by a channel; a drain contact comprising a first drain electrode and a second drain electrode mounted on said substrate adjacent said gate contact; a non-conductive deflectable beam mounted on said source electrode and overhanging said gate contact and said drain electrodes, said beam comprising an upper electrode layer and an upper contact layer, said upper electrode layer positioned on said beam over said gate contact and said upper contact layer positioned on said beam over said drain contact, said beam electrically insulating said upper contact layer from said upper electrode layer; and wherein said beam is deflectable between a first position wherein said upper contact layer is in electrical communication with said drain electrodes in response to an electrical field of a first strength established between said first gate electrode and said second gate electrode, to a second position wherein said upper contact layer is isolated from said drain electrodes in response to an electrical field of a second strength established between said first gate electrode and said second gate electrode.

Claim 11

The insulated micromechanical switch of claim 8, wherein said substrate comprises silicon or glass.

Claim 12

The insulated micromechanical switch of claim 8, wherein said beam body comprises nickel, gold, chrome, chromium, copper or iron.

Claim 13

The insulated micromechanical switch of claim 8, wherein said insulator comprises polyimide, PMMA, silicon nitride or silicon oxide.

Claim 14

The insulated micromechanical switch of claim 8, wherein said contacts comprise platinum, palladium, titanium/tungsten, rhodium or gold.

Claim 15

The insulated micromechanical switch of claim 8, wherein said beam has a length of between 5 μm and 20 μm.

Claim 16

The insulated micromechanical switch of claim 8, wherein said insulated micromechanical switch is incorporated into an electrical circuit.