Electrostatic binary switching and memory devices

Claim 3

A memory device comprising an array of electrostatically actuated binary elements electrically connected in columns and rows, each element comprising an electrostatically attractable element having at least a conductive surface and a stator member having plural electrode regions, said attractable member, when actuated, overlying said stator member and being separated therefrom by a dielectric material to thereby be capable of acting as a capacitive memory element, and means for detecting the capacitances of the elements, whereby the capacitances of each element of the array collectively indicate the information stored in the memory.

Claim 4

A memory device comprising an array of electrostatically actuated binary elements electrically connected in columns and rows, each element comprising an electrostatically attractable element having at least a conductive surface and a stator member having plural electrode regions, said attractable member, when actuated, overlying said stator member and being separated therefrom by a dielectric material to thereby be capable of acting as a capacitive memory element, and means for detecting the capacitances of the elements, whereby the capacitances of each element of the array collectively indicate the information stored in the memory.

Claim 5

The memory device of claim 2 wherein the electrostatically attractable member is a flexible flap.

Claim 6

The memory device of claim 3 wherein the flap has a permanent mechanical bias away from the stator member.

Claim 7

The memory device of claim 4 wherein the flap is biased to curl when not actuated.

Claim 8

The memory device of claims 2 or 5 wherein a first electrode region of each of the elements in a row of the array are connected together and to an input lead for that row, and a second electrode region of each of the elements in a column of the array are connected together and to an input lead for that column.

Claim 9

The memory device of claim 6 wherein a third electrode region of each of the elements in a group of elements within the array are connected together and to an input lead for that group.

Claim 10

A memory device comprising an array of elements electrically connected in columns and rows, each element in the array having at least first and second electrode regions and a memory electrode area, the first electrode region of each element in a column of the array being connected together and to an input lead for that column, the second electrode region of each element in a row of the array being connected together and to an input lead for that row, the first and second electrode regions of each element being separated by a dielectric material from the memory electrode area for that element, and means for electrically detecting the presence or absence of conductive material overlying the memory electrode area.

Claim 11

A memory device comprising an array of elements electrically connected in columns and rows, each element in the array having at least first and second electrode regions and a memory electrode area, the first electrode region of each element in a column of the array being connected together and to an input lead for that column, the second electrode region of each element in a row of the array being connected together and to an input lead for that row, the first and second electrode regions of each element being separated by a dielectric material from the memory electrode area for that element, and means for electrically detecting the presence or absence of conductive material overlying the memory electrode area.

Claim 12

The memory device of claim 8 wherein the conductive material for the electrode area comprises an electrostatically attractable member having at least a conductive surface.

Claim 13

A binary device comprising; an array of electrostatically actuated binary elements, each element comprising a stator member, an electrostatically attractable member, and a plurality of electrode regions which, when energized, electrostatically attract the attractable member toward the stator member, a first electrode region of each binary element being connected in a primary array of rows and columns, a second electrode region of each binary element being connected in a first switching array of rows and columns, and a third electrode region of each binary element being connected in a second switching array of rows and columns, each element being actuated in the primary array by the concurrence of a drive voltage for the column with a drive voltage for the row at the intersection of which the region is located, the drive voltage for the column of the primary array being controlled by the first switching array of binary elements, each region of the first switching array being actuated by the concurrence of a drive voltage for the column with a drive voltage for the row at the intersection of which the region is located, and the drive voltage for the row of the primary array being controlled by the second switching array of binary elements, each element of the second switching array being actuated by the concurrence of a drive voltage for the column with a drive voltage for the row at the intersection of which the second switching array element is located.

Claim 14

A binary device comprising; an array of electrostatically actuated binary elements, each element comprising a stator member, an electrostatically attractable member, and a plurality of electrode regions which, when energized, electrostatically attract the attractable member toward the stator member, a first electrode region of each binary element being connected in a primary array of rows and columns, a second electrode region of each binary element being connected in a first switching array of rows and columns, and a third electrode region of each binary element being connected in a second switching array of rows and columns, each element being actuated in the primary array by the concurrence of a drive voltage for the column with a drive voltage for the row at the intersection of which the region is located, the drive voltage for the column of the primary array being controlled by the first switching array of binary elements, each region of the first switching array being actuated by the concurrence of a drive voltage for the column with a drive voltage for the row at the intersection of which the region is located, and the drive voltage for the row of the primary array being controlled by the second switching array of binary elements, each element of the second switching array being actuated by the concurrence of a drive voltage for the column with a drive voltage for the row at the intersection of which the second switching array element is located.

Claim 15

The device of claim 10 wherein actuation of the elements of the primary array requires the additional concurrence of a third drive voltage, the third drive voltage being controlled by a third switching array of binary elements, each element of which is actuated by the concurrence of a drive voltage for the column with a drive voltage for the row at the intersection of which the third switching array element is located.

Claim 16

The device of claim 10 wherein the elements of the switching arrays comprise a stator member having a plurality of electrode regions and a flap member having a plurality of electrode regions, energization of certain of the electrode regions causing the flap to overlie the stator member to thereby form a capacitor through which a drive signal will pass to the primary array.