Semiconductor device microstructure

Claim 2

An integrated semiconductor device comprising: a semiconductor body having a depression formed by an anisotropic etch applied to a first surface of the body, the semiconductor body comprising (100) silicon having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a thin film dielectric member comprising first and second static electric elements, the member having a predetermined configuration suspended over the depression, the predetermined configuration being oriented at a non-zero angle to the <110> direction, the member being connected to the first surface at first and second substantially opposing ends so that the predetermined configuration is bridged across the depression, the depression opening to the first surface around at least a portion of the predetermined configuration, the depression, the opening, and the member providing substantial physical and thermal isolation between the first and second elements and the semiconductor body; whereby an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the first and second elements and the semiconductor body.

Claim 3

The apparatus of claim 1 wherein the member comprises first and second member means, the first member means comprising the first static electric element, the second member means comprising the second static electric element, each member means having a predetermined configuration suspended over the depression, each member means being connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration of each member means, the two member means being connected by connecting means for connecting the first and second member means together, the connecting means being suspended over the depression and physically isolated from the semiconductor body.

Claim 4

The apparatus of claim 2 wherein each static electric element comprises a thermal-to-electric transducing element.

Claim 5

The apparatus of claim 3 wherein each thermal-to-electric transducing element comprises resistive element means.

Claim 6

The apparatus of claim 1 wherein each static electric element comprises a thermal-to-electric transducing element.

Claim 7

The apparatus of claim 5 wherein each thermal-to-electric transducing element comprises resistive element means.

Claim 8

A semiconductor device comprising: a semiconductor body having a depression formed by an anisotropic etch applied to a first surface of the body, the semiconductor body comprising (100) silicon having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a thin film dielectric member comprising first and second thermal-to-electric transducing elements, the member having a predetermined configuration suspended over the depression, the predetermined configuration being oriented at a non-zero angle to the <110> direction, the member being connected to the first surface at first and second substantialy opposing ends so that the predetermined configuration is bridged across the depression, the depression opening to the first surface around at least a portion of the predetermined configuration, the depression, the opening, and the member providing substantial physical and thermal isolation between the first and second elements and the semiconductor body; whereby an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the first and second elements and the semiconductor body.

Claim 9

A semiconductor device comprising: a semiconductor body having a depression formed by an anisotropic etch applied to a first surface of the body, the semiconductor body comprising (100) silicon having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a thin film dielectric member comprising first and second thermal-to-electric transducing elements, the member having a predetermined configuration suspended over the depression, the predetermined configuration being oriented at a non-zero angle to the <110> direction, the member being connected to the first surface at first and second substantialy opposing ends so that the predetermined configuration is bridged across the depression, the depression opening to the first surface around at least a portion of the predetermined configuration, the depression, the opening, and the member providing substantial physical and thermal isolation between the first and second elements and the semiconductor body; whereby an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the first and second elements and the semiconductor body.

Claim 10

The apparatus of claim 7 wherein the member comprises first and second member means, the first member means comprising the thermal-to-electric transducing element, the second member means comprising the second thermal-to-electric transducing element, each member means having a predetermined configuration suspended over the depression, each member means being connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of each predetermined configuration, the first and second member means being connected by connecting means for connecting the first and second member means together, the connecting means being suspended over the depression and physically isolated from the semiconductor body.

Claim 11

The apparatus of claim 8 wherein each thermal-to-electric transducing element comprises resistive element means.

Claim 12

The apparatus of claim 7 wherein each thermal-to-electric transducing element comprises resistive element means.

Claim 13

A flow sensor, comprising: a semiconductor body having a depression formed by an anisotropic etch applied to a first surface of the body, the semiconductor body comprising (100) silicon having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a thin film dielectric member comprising first and second resistive element means, the member having a predetermined configuration suspended over the depression, the predetermined configuration being oriented at a non-zero angle to the <110> direction, the member being connected to the first surface at first and second substantially opposing ends so that the predetermined configuration is bridged across the depression, the depression opening to the first surface around at least a portion of the predetermined configuration, the depression, the opening, and the member providing substantial physical and thermal isolation between the first and second resistive element means and the semiconductor body; the resistive element means when provided with current becoming heated, there being a predetermined relationship between the resistance of each resistive element means and the temperature of the respective resistive element means; the first resistive element means being adapted to provide a first signal related to the resistance of the first resistive element means, the second resistive element means being adapted to provide a second signal related to the resistance of the second resistive element means, the two signals having a predetermined relationship to the rate of air flow when air flows over the member from the first resistive element means to the second resistive element means; whereby the first and second signals may be offset so that at a predetermined rate of flow the difference between the first and second signals has a predetermined value.

Claim 14

A flow sensor, comprising: a semiconductor body having a depression formed by an anisotropic etch applied to a first surface of the body, the semiconductor body comprising (100) silicon having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a thin film dielectric member comprising first and second resistive element means, the member having a predetermined configuration suspended over the depression, the predetermined configuration being oriented at a non-zero angle to the <110> direction, the member being connected to the first surface at first and second substantially opposing ends so that the predetermined configuration is bridged across the depression, the depression opening to the first surface around at least a portion of the predetermined configuration, the depression, the opening, and the member providing substantial physical and thermal isolation between the first and second resistive element means and the semiconductor body; the resistive element means when provided with current becoming heated, there being a predetermined relationship between the resistance of each resistive element means and the temperature of the respective resistive element means; the first resistive element means being adapted to provide a first signal related to the resistance of the first resistive element means, the second resistive element means being adapted to provide a second signal related to the resistance of the second resistive element means, the two signals having a predetermined relationship to the rate of air flow when air flows over the member from the first resistive element means to the second resistive element means; whereby the first and second signals may be offset so that at a predetermined rate of flow the difference between the first and second signals has a predetermined value.

Claim 15

The apparatus of claim 11 wherein the member comprises first and second member means, the first member means comprising the first resistive element means, the second member means comprising the second resistive element means, each member means having a predetermined configuration suspended over the depression, each member means being connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration of each member means, the two member means being connected by connecting means for connecting the first and second member means together, the connecting means being suspended over the depression and physically isolated from the semiconductor body.

Claim 16

The apparatus of claim 1, 2, 7 or 8 wherein the semiconductor body comprises an integrated circuit operating in conjunction with the elements.

Claim 17

The apparatus of claim 7 or 11 wherein the predetermined configuration comprises a substantially straight edge which is oriented at the non-zero angle.

Claim 18

The apparatus of claim 14 wherein the non-zero angle is substantially 45 degrees, whereby the member will be undercut the maximum efficiency.

Claim 19

The apparatus of claim 1, 7 or 11 wherein the predetermined configuration has an axis which is oriented at the non-zero angle.

Claim 20

The apparatus of claim 16 wherein the non-zero angle is substantially 45 degrees, whereby the member will be undercut with maximum efficiency.

Claim 21

The apparatus of claim 1, 7 or 11 wherein the non-zero angle is substantially 45 degrees, whereby the member will be undercut with maximum efficiency.

Claim 22

The apparatus of claim 1, 7 or 11 wherein the predetermined configuration has an area greater than approximately 20×10 -6 square inch.

Claim 23

The apparatus of claim 1, 7 or 11 wherein the member has a thickness in the range of approximately 0.8 microns to approximately 1.2 microns.

Claim 24

The apparatus of claim 1, 7 or 11 wherein the depression has a depth as measured between the member and the semiconductor body in the range of approximately 0.001 inch to approximately 0.010 inch.

Claim 25

The apparatus of claim 1, 7 or 11 wherein the predetermined configuration comprises a substantially straight edge which is oriented at the non-zero angle.

Claim 26

The apparatus of claim 22 wherein the non-zero angle is substantially 45 degrees, whereby the member will be undercut with maximum efficiency.

Claim 27

The apparatus of claim 1, 7 or 11 wherein the predetermined configuration has an axis which is oriented at the non-zero angle.

Claim 28

The apparatus of claim 24 wherein the non-zero angle is substantially 45 degrees, whereby the member will be undercut with maximum efficiency.

Claim 29

The apparatus of claim 1, 7 or 11 wherein the non-zero angle is substantially 45 degrees, whereby the member will be undercut with maximum efficiency.

Claim 30

The apparatus of claim 1, 7 or 11 wherein the predetermined configuration has an area greater than approximately 20×10 -6 square inch.

Claim 31

The apparatus of claim 1, 7 or 11 wherein the member has a thickness in the range of approximately 0.8 microns to approximately 1.2 microns.

Claim 32

The apparatus of claim 1, 7 or 11 wherein the depression has a depth as measured between the member and the semiconductor body in the range of approximately 0.001 inch to approximately 0.010 inch.

Claim 33

The apparatus of claim 11, 6 or 10 wherein each resistive element means comprises a permalloy element.

Claim 34

The apparatus of claim 30 wherein each permalloy element has a thickness in the range of approximately 800 angstroms to approximately 1600 angstroms.

Claim 35

The apparatus of claim 31 wherein each permalloy element has a composition of approximately 80 percent nickel and approximately 20 percent iron.

Claim 36

The apparatus of claim 32 wherein each permalloy element has a resistance in the range of approximately 500 ohms to approximately 2000 ohms at 25° C.

Claim 37

The apparatus of claim 33 wherein the member means comprises a dielectric encapsulating each permalloy element.

Claim 38

The apparatus of claim 34 wherein the dielectric comprises silicon nitride.

Claim 39

The apparatus of claim 30 wherein each permalloy element has a composition of approximately 80 percent nickel and approximately 20 percent iron.

Claim 40

The apparatus of claim 36 wherein each permalloy element has a resistance in the range of approximately 500 ohms to approximately 2000 ohms at 25° C.

Claim 41

The apparatus of claim 37 wherein the member comprises a dielectric encapsulating each permalloy element.

Claim 42

The apparatus of claim 38 wherein the dielectric comprises silicon nitride.

Claim 43

The apparatus of claim 30 wherein each permalloy element has a resistance in the range of approximately 500 ohms to approximately 2000 ohms at 25° C.

Claim 44

The apparatus of claim 40 wherein the member comprises a dielectric encapsulating each permalloy element.

Claim 45

The apparatus of claim 41 wherein the dielectric comprises silicon nitride.

Claim 46

The apparatus of claim 30 wherein the member comprises a dielectric encapsulating each permalloy element.

Claim 47

The apparatus of claim 43 wherein the dielectric comprises silicon nitride.

Claim 48

The apparatus of claim 11, 6 or 10 wherein each resistive element means comprises a permalloy element.

Claim 49

The apparatus of claim 45 wherein each permalloy element has a thickness in the range of approximately 800 angstroms to approximately 1600 angstroms.

Claim 50

The apparatus of claim 45 wherein each permalloy element has a composition of approximately 80 percent nickel and approximately 20 percent iron.

Claim 51

The apparatus of claim 45 wherein each permalloy element has a resistance in the range of approximately 500 ohms to approximately 2000 ohms at 25° C.

Claim 52

The apparatus of claim 45 wherein the member comprises a dielectric encapsulating each permalloy element.

Claim 53

The apparatus of claim 49 wherein the dielectric comprises silicon nitride.

Claim 54

The apparatus of claim 2, 8 or 12 wherein each predetermined configuration comprises a substantially straight edge which is oriented at the non-zero angle.

Claim 55

The apparatus of claim 51 wherein the non-zero angle is substantially 45 degrees, whereby each member means will be undercut with maximum efficiency.

Claim 56

The apparatus of claim 2, 8 or 12 wherein each predetermined configuration has an axis which is oriented at the non-zero angle.

Claim 57

The apparatus of claim 53 wherein the non-zero angle is substantially 45 degrees, whereby each member means will be undercut with maximum efficiency.

Claim 58

The apparatus of claim 2 8 or 12 wherein the non-zero angle is substantially 45 degrees, whereby each member means will be undercut with maximum efficiency.

Claim 59

The apparatus of claim 2, 8 or 12 wherein each predetermined configuration has an area greater than approximately 10×10 -6 square inch.

Claim 60

The apparatus of claim 2, 8 or 12 wherein each member means has a thickness in the range of approximately 0.8 microns to approximately 1.2 microns.

Claim 61

The apparatus of claim 2, 8 or 12 wherein the depression has a depth as measured between each member means and the semiconductor body in the range of approximately 0.001 inch to approximately 0.010 inch.

Claim 62

The apparatus of claim 12, 4 or 9 wherein each resistive element means comprises a permalloy element.

Claim 63

The apparatus of claim 59 wherein each permalloy element has a thickness in the range of approximately 800 angstroms to approximately 1600 angstroms.

Claim 64

The apparatus of claim 59 wherein each permalloy element has a composition of approximately 80 percent nickel and approximately 20 percent iron.

Claim 65

The apparatus of claim 59 wherein each permalloy element has a resistance in the range of approximately 500 ohms to approximately 2000 ohms at 25° C.

Claim 66

The apparatus of claim 59 wherein each member means comprises a dielectric encapsulating the respective permalloy element.

Claim 67

The apparatus of claim 63 wherein the dielectric comprises silicon nitride.

Claim 68

The apparatus of claim 12, 4 or 9 wherein the first and second member means are substantially identical, the first and second member means comprising substantially identical first and second resistive element means.

Claim 69

The apparatus of claim 11 or 12 wherein the first and second resistive element means comprise a circuit for offsetting the first and second signals.

Claim 70

The apparatus of claim 66 wherein the circuit is integrated on the semiconductor body.

Claim 71

The apparatus of claim 66 wherein the difference between the first and second signals is substantially zero at a substantially zero flow rate.

Claim 72

An integrated semiconductor device comprising: a semiconductor body having a depression formed into a first surface of the body, the semiconductor body comprising (100) silicon having a (100) plane and <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a thin film member comprising first and second static electric elements, the member having a predetermined configuration suspended over the depression, the predetermined configuration being oriented at a non-zero angle to the <110> direction, the member being connected to the first surface so that the predetermined configuration is cantilevered over the depression, the depression opening to the first surface around at least a portion of the predetermined configuration, the depression providing substantial physical and thermal isolation between the first and second elements and the semiconductor body; whereby an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the first and second element and the semiconductor body.

Claim 73

An integrated semiconductor device comprising: a semiconductor body having a depression formed into a first surface of the body, the semiconductor body comprising (100) silicon having a (100) plane and <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a thin film member comprising first and second static electric elements, the member having a predetermined configuration suspended over the depression, the predetermined configuration being oriented at a non-zero angle to the <110> direction, the member being connected to the first surface so that the predetermined configuration is cantilevered over the depression, the depression opening to the first surface around at least a portion of the predetermined configuration, the depression providing substantial physical and thermal isolation between the first and second elements and the semiconductor body; whereby an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the first and second element and the semiconductor body.

Claim 74

A semiconductor device comprising: a semiconductor body having a depression formed into a first surface of the body, the semiconductor body comprising (100) silicon having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a thin film member comprising first and second thermal-to-electric transducing elements, the member having a predetermined configuration suspended over the depression, the predetermined configuration being oriented at a non-zero angle to the <110> direction, the member being connected to the first surface so that the predetermined configuration is cantilevered over the depression, the depression opening to the first surface around at least a portion of the predetermined configuration, the depression providing substantial physical and thermal isolation between the first and second elements and the semiconductor body; and whereby an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the first and second elements and the semiconductor body.

Claim 75

A semiconductor device comprising: a semiconductor body having a depression formed into a first surface of the body, the semiconductor body comprising (100) silicon having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a thin film member comprising first and second thermal-to-electric transducing elements, the member having a predetermined configuration suspended over the depression, the predetermined configuration being oriented at a non-zero angle to the <110> direction, the member being connected to the first surface so that the predetermined configuration is cantilevered over the depression, the depression opening to the first surface around at least a portion of the predetermined configuration, the depression providing substantial physical and thermal isolation between the first and second elements and the semiconductor body; and whereby an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the first and second elements and the semiconductor body.

Claim 76

A flow sensor comprising: a semiconductor body having a depression formed into a first surface of the body, the semiconductor body comprising (100) silicon having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a thin film member comprising first and second resistive element means, the member having a predetermined configuration suspended over the depression, the predetermined configuration being oriented at a non-zero angle to the <110> direction, the member being connected to the first surface so that the predetermined configuration is cantilevered over the depression, the depression opening to the first surface around at least a portion of the predetermined configuration, the depression providing substantial physical and thermal isolation between the first and second resistive element means and the semiconductor body; the resistive element means when provided with current becoming heated, there being a predetermined relationship between the resistance of each resistive element means and the temperature of the respective resistive element means; the first and second resistive element means being adapted to provide a first signal related to the resistance of the first resistive element means, the second resistive element means being adapted to provide a second signal related to the resistance of the second resistive element means, the two signals having a predetermined relationship to the rate of air flow when air flows over the member from the first resistive element means to the second resistive element means; and whereby the first and second signals may be offset so that at a predetermined rate of flow the difference between the first and second signals has a predetermined value.

Claim 77

A flow sensor comprising: a semiconductor body having a depression formed into a first surface of the body, the semiconductor body comprising (100) silicon having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a thin film member comprising first and second resistive element means, the member having a predetermined configuration suspended over the depression, the predetermined configuration being oriented at a non-zero angle to the <110> direction, the member being connected to the first surface so that the predetermined configuration is cantilevered over the depression, the depression opening to the first surface around at least a portion of the predetermined configuration, the depression providing substantial physical and thermal isolation between the first and second resistive element means and the semiconductor body; the resistive element means when provided with current becoming heated, there being a predetermined relationship between the resistance of each resistive element means and the temperature of the respective resistive element means; the first and second resistive element means being adapted to provide a first signal related to the resistance of the first resistive element means, the second resistive element means being adapted to provide a second signal related to the resistance of the second resistive element means, the two signals having a predetermined relationship to the rate of air flow when air flows over the member from the first resistive element means to the second resistive element means; and whereby the first and second signals may be offset so that at a predetermined rate of flow the difference between the first and second signals has a predetermined value.

Claim 78

The apparatus of claim 69, 70 or 71 wherein the predetermined configuration comprises a substantially straight edge which is oriented at the non-zero angle.

Claim 79

The apparatus of claim 72 wherein the non-zero angle is substantially 45 degrees, whereby the member means will be undercut with maximum efficiency.

Claim 80

The apparatus of claim 69, 70 or 71 wherein the predetermined configuration has an axis which is oriented at the non-zero angle.

Claim 81

The apparatus of claim 59 wherein the non-zero angle is substantially 45 degrees, whereby the member will be undercut with maximum efficiency.

Claim 82

The apparatus of claim 69, 70 or 71 wherein the non-zero angle is substantially 45 degrees, whereby the member will be undercut with maximum efficiency.

Claim 83

The apparatus of claim 69, 70 or 71 wherein the predetermined configuration has an area greater than approximately 20×10 -6 square inch.

Claim 84

The apparatus of claim 69, 70 or 71 wherein the member has a thickness in the range of approximately 0.8 microns to approximately 1.2 microns.

Claim 85

The apparatus of claim 69, 70 or 71 wherein the depression has a depth as measured between the member and the semiconductor body in the range of approximately 0.001 inch to approximately 0.010 inch.

Claim 86

The apparatus of claim 71 wherein each resistive element means comprises a permalloy element.

Claim 87

The apparatus of claim 80 wherein each permalloy element has a thickness in the range of approximately 800 angstroms to approximately 1600 angstroms.

Claim 88

The apparatus of claim 80 wherein each permalloy element has a composition of approximately 80 percent nickel and approximately 20 percent iron.

Claim 89

The apparatus of claim 80 wherein each permalloy element has a resistance in the range of approximately 500 ohms to approximately 2000 ohms at 25° C.

Claim 90

The apparatus of claim 80 wherein the member comprises a dielectric encapsulating each permalloy element.

Claim 91

The apparatus of claim 84 wherein the dielectric comprises silicon nitride.

Claim 92

An integrated semiconductor device comprising: a semiconductor body having a depression formed by an anisotropic etch applied to a first surface of the body, the semiconductor body comprising (100) silicon having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a thin film dielectric member comprising first and second static electric elements, the member having a predetermined configuration suspended over the depression, the predetermined configuration being oriented at a non-zero angle to the <110> direction, the member being connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration, the depression, the opening, and the member providing substantial physical and thermal isolation between the first and second elements and the semiconductor body; whereby an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the first and second elements and the semiconductor body.

Claim 93

An integrated semiconductor device comprising: a semiconductor body having a depression formed by an anisotropic etch applied to a first surface of the body, the semiconductor body comprising (100) silicon having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a thin film dielectric member comprising first and second static electric elements, the member having a predetermined configuration suspended over the depression, the predetermined configuration being oriented at a non-zero angle to the <110> direction, the member being connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration, the depression, the opening, and the member providing substantial physical and thermal isolation between the first and second elements and the semiconductor body; whereby an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the first and second elements and the semiconductor body.

Claim 94

A semiconductor device comprising: a semiconductor body having a depression formed by an anisotropic etch applied to a first surface of the body, the semiconductor body comprising (100) silicon having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a thin film dielectric member comprising first and second thermal-to-electric transducing elements, the member having a predetermined configuration suspended over the depression, the predetermined configuration being oriented at a non-zero angle to the <110> direction, the member being connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration, the depression, the opening, and the member providing substantial physical and thermal isolation between the first and second elements and the semiconductor body; whereby an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the first and second elements and the semiconductor body.

Claim 95

A semiconductor device comprising: a semiconductor body having a depression formed by an anisotropic etch applied to a first surface of the body, the semiconductor body comprising (100) silicon having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a thin film dielectric member comprising first and second thermal-to-electric transducing elements, the member having a predetermined configuration suspended over the depression, the predetermined configuration being oriented at a non-zero angle to the <110> direction, the member being connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration, the depression, the opening, and the member providing substantial physical and thermal isolation between the first and second elements and the semiconductor body; whereby an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the first and second elements and the semiconductor body.

Claim 96

A flow, sensor, comprising: a semiconductor body having a depression formed by an anisotropic etch applied to a first surface of the body, the semiconductor body comprising (100) silicon having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a thin film dielectric member comprising first and second resistive element means, the member having a predetermined configuration suspended over the depression, the predetermined configuration being oriented at a non-zero angle to the <110> direction, the member being connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration, the depression, the opening, and the member providing substantial physical and thermal isolation between the first and second resistive element means and the semiconductor body; the resistive element means when provided with current becoming heated, there being a predetermined relationship between the resistance of each resistive element means and the temperature of the respective resistive element means; the first resistive element means being adapted to provide a first signal related to the resistance of the first resistive element means, the second resistive element means being adapted to provide a second signal related to the resistance of the second resistive element means, the two signals having a predetermined relationship to the rate of air flow when air flows over the member from the first resistive element means to the second resistive element means; whereby the first and second signals may be offset so that at a predetermined rate of flow the difference between the first and second signals has a predetermined value.

Claim 97

A flow, sensor, comprising: a semiconductor body having a depression formed by an anisotropic etch applied to a first surface of the body, the semiconductor body comprising (100) silicon having a (100) plane and a <110> direction, the first surface of the semiconductor body being substantially parallel to the (100) plane; a thin film dielectric member comprising first and second resistive element means, the member having a predetermined configuration suspended over the depression, the predetermined configuration being oriented at a non-zero angle to the <110> direction, the member being connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration, the depression, the opening, and the member providing substantial physical and thermal isolation between the first and second resistive element means and the semiconductor body; the resistive element means when provided with current becoming heated, there being a predetermined relationship between the resistance of each resistive element means and the temperature of the respective resistive element means; the first resistive element means being adapted to provide a first signal related to the resistance of the first resistive element means, the second resistive element means being adapted to provide a second signal related to the resistance of the second resistive element means, the two signals having a predetermined relationship to the rate of air flow when air flows over the member from the first resistive element means to the second resistive element means; whereby the first and second signals may be offset so that at a predetermined rate of flow the difference between the first and second signals has a predetermined value.

Claim 98

The apparatus of claim 86, 87 or 88 wherein the predetermined configuration comprises a substantially straight edge which is oriented at the non-zero angle.

Claim 99

The apparatus of claim 89 wherein the non-zero angle is substantially 45 degrees, whereby the member will be undercut with maximum efficiency.

Claim 100

The apparatus of claim 86, 87 or 88 wherein the predetermined configuration has an axis which is oriented at the non-zero angle.

Claim 101

The apparatus of claim 91 wherein the non-zero angle is substantially 45 degrees, whereby the member means will be undercut with maximum efficiency.

Claim 102

The apparatus of claim 86, 87 or 88 wherein the non-zero angle is substantially 45 degrees, whereby the member means will be undercut with maximum efficiency.