US4293373A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making transducer
Assignee: International Standard Electric Corp
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Filing: 1980-02-26
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Granted: 1981-10-06
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Expires: 2000-02-26
Abstract
Abstract A silicon transducer including a silicon frame with one or more lands extending from a diaphragm or the like. The lands are interconnected by two thin strips formed integrally with the lands. The strips are essentially the transducer. The transducer is constructed by etching a boron doped wafer with a mixture of catechol, ethylene diamine and water.
Inventors
- 👤 John C. Greenwood
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 13:04
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/50; G; G01; G01L; G01L9/00; G01L9/0001; G01L9/0008; G01L9/0019; G01L9/0041; G01L9/0042; Y; Y10; Y10S; Y10S438/00; Y10S438/928
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
121 words
The method of making a silicon pressure transducer, said method comprising the steps of: selectively boron doping both faces of a silicon wafer; etching one face of said wafer to define a cavity within a frame forming a closed loop and two lands spaced from each other and from said frame, said diaphragm connecting said lands; and selectively etching the other face of said wafer opposite said groove so as to define a silicon diaphragm to which both of said lands are fixed, said etching steps leaving at least two filaments having a first pair of adjacent ends fixed to one land and a second pair of adjacent ends fixed to the other land in a plane spaced from said diaphragm.
Claim 2
Independent Claim
121 words
The method of making a silicon pressure transducer, said method comprising the steps of: selectively boron doping both faces of a silicon wafer; etching one face of said wafer to define a cavity within a frame forming a closed loop and two lands spaced from each other and from said frame, said diaphragm connecting said lands; and selectively etching the other face of said wafer opposite said groove so as to define a silicon diaphragm to which both of said lands are fixed, said etching steps leaving at least two filaments having a first pair of adjacent ends fixed to one land and a second pair of adjacent ends fixed to the other land in a plane spaced from said diaphragm.
Claim 3
Dependent Claim
23 words
A process as claimed in claim 1, in which said selective etching is effected with a mixture of catechol, ethylene diamine and water.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-10-05 | 1985-04-06 | 1985-10-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-10-05 | 1989-04-06 | 1989-10-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-10-05 | 1993-04-06 | 1993-10-06 | $7700.00 | Window Closed / Lapsed |