US4371861A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ni-fe thin-film temperature sensor
Assignee: Honeywell Inc
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Filing: 1980-12-11
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Granted: 1983-02-01
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Expires: 2000-12-11
Abstract
Abstract A permalloy thin film temperature sensing element in which the NiFe film material is deposited on a substrate in very narrow lines less than about 15 μm wide and in film thicknesses in excess of about 400A° preferably in the range of 1600°-3200A°.
Inventors
- 👤 Mona Abdelrahman
- 👤 Ralph W. Fuchs
- 👤 James O. Holman
- 👤 Robert G. Johnson
- 👤 M. Walter Scott
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 16:54
CPC Classifications
G; G01; G01K; G01K7/00; G01K7/16; G01K7/18; G01K7/183
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
96 words
A temperature sensing element comprising: an insulating substrate; an isolating layer on the surface of said substrate; a long narrow thin film resistive path of NiFe deposited on the surface of said isolating layer, said resistive path having a narrow width of less than about 15 μm and said resistive path having a thickness in excess of about 400 A°, said NiFe path having a desired temperature coefficient of resistance and by reason of said narrow width and said deposition thickness being relatively insensitive to magnetic field intensity; and, a passivating layer overlaying the resistive material.
Claim 2
Dependent Claim
96 words
A temperature sensing element comprising: an insulating substrate; an isolating layer on the surface of said substrate; a long narrow thin film resistive path of NiFe deposited on the surface of said isolating layer, said resistive path having a narrow width of less than about 15 μm and said resistive path having a thickness in excess of about 400 A°, said NiFe path having a desired temperature coefficient of resistance and by reason of said narrow width and said deposition thickness being relatively insensitive to magnetic field intensity; and, a passivating layer overlaying the resistive material.
Claim 3
Dependent Claim
12 words
The element according to claim 1 wherein said isolating layer is SiO.
Claim 4
Dependent Claim
13 words
The element according to claim 1 wherein said isolating layer is silicon nitride.
Claim 5
Dependent Claim
32 words
The element according to claim 1 wherein said NiFe path has a width of about 7 μm and a deposition thickness in the range from about 1600 A° to about 3200 A°.
Claim 6
Dependent Claim
15 words
The element according to claim 1 wherein the width is less than about 10 μm.
Claim 7
Dependent Claim
15 words
The element according to claim 1 wherein the width is less than about 7 μm.
Claim 8
Dependent Claim
22 words
The element according to claim 1 wherein the width is in the range of from about 7 μm to about 15 μm.
Claim 9
Dependent Claim
23 words
The element according to claim 1 wherein the resistive path thickness is in the range of about 400 A° to about 3200 A°.
Claim 10
Dependent Claim
18 words
The element according to claim 1 wherein the resistive path thickness is in excess of about 1600 A°.
Claim 11
Dependent Claim
11 words
The element according to claim 1 wherein said substrate is silicon.
Claim 12
Dependent Claim
13 words
The element according to claim 1 wherein said passivating layer is silicon nitride.
Claim 13
Dependent Claim
83 words
A temperature sensing element comprising: an insulating substrate; and, a long narrow thin-film resistive path of the NiFe deposited on the surface of a said substrate, said resistive path having a narrow width in the range of less than about 15 μm and said resistive path having a thickness in excess of about 400 A°, said NiFe path having a desired temperature coefficient of resistance and by reason of said narrow width and said deposition thickness being relatively insensitive to magnetic field intensity.
Claim 14
Dependent Claim
83 words
A temperature sensing element comprising: an insulating substrate; and, a long narrow thin-film resistive path of the NiFe deposited on the surface of a said substrate, said resistive path having a narrow width in the range of less than about 15 μm and said resistive path having a thickness in excess of about 400 A°, said NiFe path having a desired temperature coefficient of resistance and by reason of said narrow width and said deposition thickness being relatively insensitive to magnetic field intensity.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-31 | 1986-08-02 | 1987-02-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-31 | 1990-08-02 | 1991-02-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-31 | 1994-08-02 | 1995-02-01 | $7700.00 | Window Closed / Lapsed |