Non-volatile memory device including a micro-mechanical storage element

Claim 2

A memory device for storing digital electronic signals comprising at least one micromechanical memory element, said memory element comprising a support having a recess defined therein, and a curved mechanical component bridging said recess and having first and second stable positions corresponding to first and second digital logic values, said first stable position being concave down towards said support and said second stable position being convex up away from said support, a conductive barrier layer located on a surface of said support under said mechanical component, writing means for creating an attractive force between said mechanical component and said barrier layer to cause said mechanical component to occupy said first stable position and for creating a repulsive force between said mechanical component and said barrier layer to cause said mechanical component to occupy said second stable position, and electronic reading circuitry including a field effect transistor coupled to said micromechanical memory element for electronically detecting the one of said first and second stable positions that said mechanical component is in, and for producing an electronic output signal indicative thereof and corresponding to one of said digital logic values.

Claim 3

The memory device of claim 1, wherein said mechanical component is made of a metal.

Claim 4

The memory device of claim 1, wherein said mechanical component comprises an insulating base layer and at least one metallic layer.

Claim 5

A memory device for storing digital electronic signals comprising: at least one micromechanical memory element, said memory element comprising a support having a recess defined therein, and a curved mechanical component bridging said recess and having first and second stable positions corresponding to first and second digital logic values, said first stable position being concave down towards said support and the said second stable position being convex up away from said support, a conductive barrier layer located on a surface of said support under said mechanical component, writing means for creating an attractive force between said mechanical component and said barrier layer to cause said mechanical component to occupy said first stable position and for creating a repulsive force between said mechanical component and said barrier layer to cause said mechanical component to occupy said second stable position, said writing means comprising a first MOSFET which acts as switch between said mechanical component and a first input line and a second MOSFET which acts as a switch between said barrier layer and a second input line, and electronic reading circuitry coupled to said micromechanical memory element for electronically detecting the one of said first and second stable positions that said mechanical components is in, and for producing an electronic output signal indicative thereof and corresponding to one of said digital logic values.

Claim 6

A memory device for storing digital electronic signals comprising: at least one micromechanical memory element, said memory element comprising a support having a recess defined therein, and a curved mechanical component bridging said recess and having first and second stable positions corresponding to first and second digital logic values, said first stable position being concave down towards said support and the said second stable position being convex up away from said support, a conductive barrier layer located on a surface of said support under said mechanical component, writing means for creating an attractive force between said mechanical component and said barrier layer to cause said mechanical component to occupy said first stable position and for creating a repulsive force between said mechanical component and said barrier layer to cause said mechanical component to occupy said second stable position, said writing means comprising a first MOSFET which acts as switch between said mechanical component and a first input line and a second MOSFET which acts as a switch between said barrier layer and a second input line, and electronic reading circuitry coupled to said micromechanical memory element for electronically detecting the one of said first and second stable positions that said mechanical components is in, and for producing an electronic output signal indicative thereof and corresponding to one of said digital logic values.

Claim 7

The device of claim 4 wherein said mechanical component is operable for closing an electrical switch comprising part of said electronic reading circuitry in one of said stable positions, whereby the stable position of said mechanical component can be determined.

Claim 8

The memory device of claim 25 wherein said electronic reading circuitry for detecting the position of said mechanical component comprises a field effect transistor having source and drain regions formed in said support.

Claim 9

The memory device of claim 6 wherein a gate of said field effect transistor forms a portion of said mechanical component, whereby the conductivity of said field effect transistor is determined by whether said mechanical component is in said first stable position or said second stable position.

Claim 10

The memory device of claim 1 or claim 4 wherein said attractive and repulsive forces are electrostatic forces created by electrostatic charges on said barrier layer and said mechanical component.

Claim 11

The memory device of claim 1 or claim 4 wherein said attractive and repulsive forces are electromagnetic forces created by electric currents flowing in said mechanical component and said barrier layer.

Claim 12

The memory device of claim 1, 4, 8 or 9 wherein said barrier layer and said mechanical component form a capacitor whose capacitance value is indicative of whether said mechanical component is in said first or second stable position and wherein said electronic reading circuitry for detecting the position of said mechanical component detects the position of said mechanical component based on said capacitance value of said capacitor.