Patent US5543636A successfully refreshed from Google Patents.
US5543636A
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Insulated gate field effect transistor
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1995-06-07
•
Granted: 1996-08-06
•
Expires: 2015-06-07
Abstract
Abstract An insulated gate field effect transistor which may be of the thin film type including a non-single crystalline semiconductor layer containing hydrogen or a halogen and having an intrinsic conductivity type. The semiconductor layer is disposed over a substrate including a channel region disposed in the semiconductor layer. Source and drain regions form respective junctions with the channel region where the channel region is disposed between the source and drain regions whereby charge carriers move through the channel region between the source and drain regions in a path substantially parallel to said substrate. A gate insulating film contacts the channel region and includes silicon and nitrogen. A gate electrode contacts the gate insulating film. At least a portion of the channel region contains at least one of oxygen, nitrogen, and carbon in an amount of not exceeding 5×10 18 atoms/cm 3 .
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 20:45
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/38; H10P14/3802; H10P34/00; H10P34/40; H10P34/42; Y; Y10; Y10S; Y10S257/00; Y10S257/914
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
123 words
An insulated-gate field effect transistor comprising: a non-single crystalline semiconductor layer doped with a hydrogen or halogen and having an intrinsic conductivity type; a channel region formed in said semiconductor layer, wherein a concentration of at least one of oxygen, carbon and nitrogen contained in said semiconductor layer is not higher than 5×10 18 atoms/cm 3 ; source and drain regions forming respective junctions with said channel region whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate; a gate insulator comprising silicon nitride and directly contacting said channel region; and a gate electrode contacting said gate insulator; wherein said channel region is interposed between the gate insulator and another insulator.
Claim 2
Dependent Claim
123 words
An insulated-gate field effect transistor comprising: a non-single crystalline semiconductor layer doped with a hydrogen or halogen and having an intrinsic conductivity type; a channel region formed in said semiconductor layer, wherein a concentration of at least one of oxygen, carbon and nitrogen contained in said semiconductor layer is not higher than 5×10 18 atoms/cm 3 ; source and drain regions forming respective junctions with said channel region whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate; a gate insulator comprising silicon nitride and directly contacting said channel region; and a gate electrode contacting said gate insulator; wherein said channel region is interposed between the gate insulator and another insulator.
Claim 3
Dependent Claim
128 words
An insulated-gate field effect transistor comprising: a non-single crystalline semiconductor layer doped with a hydrogen or halogen and having an intrinsic conductivity type; a channel region formed in said semiconductor layer, wherein a concentration of at least one of oxygen, carbon and nitrogen contained in at least a portion of said channel region is not higher than 5×10 18 atoms/cm 3 ; source and drain regions forming respective junctions with said channel region whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate; a gate insulator comprising silicon nitride and directly contacting said channel region; and a gate electrode contacting said gate insulator; wherein said channel region is interposed between the gate insulator and another insulator.
Claim 4
Dependent Claim
128 words
An insulated-gate field effect transistor comprising: a non-single crystalline semiconductor layer doped with a hydrogen or halogen and having an intrinsic conductivity type; a channel region formed in said semiconductor layer, wherein a concentration of at least one of oxygen, carbon and nitrogen contained in at least a portion of said channel region is not higher than 5×10 18 atoms/cm 3 ; source and drain regions forming respective junctions with said channel region whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate; a gate insulator comprising silicon nitride and directly contacting said channel region; and a gate electrode contacting said gate insulator; wherein said channel region is interposed between the gate insulator and another insulator.
Claim 5
Dependent Claim
134 words
A thin film transistor comprising: a non-single crystalline semiconductor layer doped with a hydrogen or halogen and having an intrinsic conductivity type and having a channel region disposed in the semiconductor layer; source and drain regions forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate, a gate insulating film comprising silicon nitride and directly contacting said channel region; and a gate electrode contacting said gate insulating film; wherein at least a portion of said channel region contains oxygen in an amount not exceeding 5×10 18 atoms/cm 3 ; wherein said channel region is interposed between the gate insulating film and another insulator.
Claim 6
Dependent Claim
134 words
A thin film transistor comprising: a non-single crystalline semiconductor layer doped with a hydrogen or halogen and having an intrinsic conductivity type and having a channel region disposed in the semiconductor layer; source and drain regions forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate, a gate insulating film comprising silicon nitride and directly contacting said channel region; and a gate electrode contacting said gate insulating film; wherein at least a portion of said channel region contains oxygen in an amount not exceeding 5×10 18 atoms/cm 3 ; wherein said channel region is interposed between the gate insulating film and another insulator.
Claim 7
Dependent Claim
134 words
A thin film transistor comprising: a non-single crystalline semiconductor layer doped with a hydrogen or halogen and having an intrinsic conductivity type and having a channel region disposed in the semiconductor layer; source and drain regions forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate, a gate insulating film comprising silicon nitride and directly contacting said channel region; and a gate electrode contacting said gate insulating film; wherein at least a portion of said channel region contains nitrogen in an amount not exceeding 5×10 18 atoms/cm 3 ; wherein said channel region is interposed between the gate insulating film and another insulator.
Claim 8
Dependent Claim
134 words
A thin film transistor comprising: a non-single crystalline semiconductor layer doped with a hydrogen or halogen and having an intrinsic conductivity type and having a channel region disposed in the semiconductor layer; source and drain regions forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate, a gate insulating film comprising silicon nitride and directly contacting said channel region; and a gate electrode contacting said gate insulating film; wherein at least a portion of said channel region contains nitrogen in an amount not exceeding 5×10 18 atoms/cm 3 ; wherein said channel region is interposed between the gate insulating film and another insulator.
Claim 9
Dependent Claim
134 words
A thin film transistor comprising: a non-single crystalline semiconductor layer doped with a hydrogen or halogen and having an intrinsic conductivity type and having a channel region disposed in the semiconductor layer; source and drain regions forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate, a gate insulating film comprising silicon nitride and directly contacting said channel region; and a gate electrode contacting said gate insulating film; wherein at least a portion of said channel region contains carbon in an amount not exceeding 5×10 18 atoms/cm 3 ; wherein said channel region is interposed between the gate insulating film and another insulator.
Claim 10
Dependent Claim
134 words
A thin film transistor comprising: a non-single crystalline semiconductor layer doped with a hydrogen or halogen and having an intrinsic conductivity type and having a channel region disposed in the semiconductor layer; source and drain regions forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate, a gate insulating film comprising silicon nitride and directly contacting said channel region; and a gate electrode contacting said gate insulating film; wherein at least a portion of said channel region contains carbon in an amount not exceeding 5×10 18 atoms/cm 3 ; wherein said channel region is interposed between the gate insulating film and another insulator.
Claim 11
Dependent Claim
121 words
An insulated-gate field effect transistor comprising: a non-single crystalline semiconductor layer of an intrinsic conductivity type containing hydrogen or a halogen, said semiconductor layer being disposed over a substrate; a channel region formed in said semiconductor layer, wherein a concentration of at least one of oxygen, carbon and nitrogen contained in at least a portion of said semiconductor layer is not higher than 5×10 18 atoms/cm 3 ; source and drain regions forming respective junctions with said channel region whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate; a gate insulator contacting said channel region and comprising silicon and nitrogen; and a gate electrode contacting said gate insulator.
Claim 12
Dependent Claim
121 words
An insulated-gate field effect transistor comprising: a non-single crystalline semiconductor layer of an intrinsic conductivity type containing hydrogen or a halogen, said semiconductor layer being disposed over a substrate; a channel region formed in said semiconductor layer, wherein a concentration of at least one of oxygen, carbon and nitrogen contained in at least a portion of said semiconductor layer is not higher than 5×10 18 atoms/cm 3 ; source and drain regions forming respective junctions with said channel region whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate; a gate insulator contacting said channel region and comprising silicon and nitrogen; and a gate electrode contacting said gate insulator.
Claim 13
Dependent Claim
121 words
An insulated-gate field effect transistor comprising: a non-single crystalline semiconductor layer of an intrinsic conductivity type containing hydrogen or a halogen, said semiconductor layer being disposed over a substrate; a channel region formed in said semiconductor layer, wherein a concentration of at least one of oxygen, carbon and nitrogen contained in at least a portion of said channel region is not higher than 5×10 18 atoms/cm 3 ; source and drain regions forming respective junctions with said channel region whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate; a gate insulator contacting said channel region and comprising silicon and nitrogen; and a gate electrode contacting said gate insulator.
Claim 14
Dependent Claim
121 words
An insulated-gate field effect transistor comprising: a non-single crystalline semiconductor layer of an intrinsic conductivity type containing hydrogen or a halogen, said semiconductor layer being disposed over a substrate; a channel region formed in said semiconductor layer, wherein a concentration of at least one of oxygen, carbon and nitrogen contained in at least a portion of said channel region is not higher than 5×10 18 atoms/cm 3 ; source and drain regions forming respective junctions with said channel region whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate; a gate insulator contacting said channel region and comprising silicon and nitrogen; and a gate electrode contacting said gate insulator.
Claim 15
Dependent Claim
127 words
A thin film transistor comprising: a non-single crystalline semiconductor layer containing hydrogen or a halogen and having an intrinsic conductivity type, said semiconductor layer being disposed over a substrate including a channel region disposed in the semiconductor layer; source and drain region forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate, a gate insulating film contacting said channel region and comprising silicon and nitrogen; and a gate electrode contacting said gate insulating film; wherein at least a portion of said channel region contains oxygen in an amount of not exceeding 5×10 18 atoms/cm 3 .
Claim 16
Dependent Claim
127 words
A thin film transistor comprising: a non-single crystalline semiconductor layer containing hydrogen or a halogen and having an intrinsic conductivity type, said semiconductor layer being disposed over a substrate including a channel region disposed in the semiconductor layer; source and drain region forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate, a gate insulating film contacting said channel region and comprising silicon and nitrogen; and a gate electrode contacting said gate insulating film; wherein at least a portion of said channel region contains oxygen in an amount of not exceeding 5×10 18 atoms/cm 3 .
Claim 17
Dependent Claim
127 words
A thin film transistor comprising: a non-single crystalline semiconductor layer containing hydrogen or a halogen and having an intrinsic conductivity type, said semiconductor layer being disposed over a substrate including a channel region disposed in the semiconductor layer; source and drain region forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate, a gate insulating film contacting said channel region and comprising silicon and nitrogen; and a gate electrode contacting said gate insulating film; wherein at least a portion of said channel region contains nitrogen in an amount of not exceeding 5×10 18 atoms/cm 3 .
Claim 18
Dependent Claim
127 words
A thin film transistor comprising: a non-single crystalline semiconductor layer containing hydrogen or a halogen and having an intrinsic conductivity type, said semiconductor layer being disposed over a substrate including a channel region disposed in the semiconductor layer; source and drain region forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate, a gate insulating film contacting said channel region and comprising silicon and nitrogen; and a gate electrode contacting said gate insulating film; wherein at least a portion of said channel region contains nitrogen in an amount of not exceeding 5×10 18 atoms/cm 3 .
Claim 19
Dependent Claim
127 words
A thin film transistor comprising: a non-single crystalline semiconductor layer containing hydrogen or a halogen and having an intrinsic conductivity type, said semiconductor layer being disposed over a substrate including a channel region disposed in the semiconductor layer; source and drain region forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate, a gate insulating film contacting said channel region; and a gate electrode contacting said gate insulating film and comprising silicon and nitrogen; wherein at least a portion of said channel region contains carbon in an amount of not exceeding 5×10 18 atoms/cm 3 .
Claim 20
Dependent Claim
127 words
A thin film transistor comprising: a non-single crystalline semiconductor layer containing hydrogen or a halogen and having an intrinsic conductivity type, said semiconductor layer being disposed over a substrate including a channel region disposed in the semiconductor layer; source and drain region forming respective junctions with said channel region where the channel region is disposed between said source and drain regions whereby charge carriers move through said channel region between said source and drain regions in a path substantially parallel to said substrate, a gate insulating film contacting said channel region; and a gate electrode contacting said gate insulating film and comprising silicon and nitrogen; wherein at least a portion of said channel region contains carbon in an amount of not exceeding 5×10 18 atoms/cm 3 .
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| 3.5 Years (Year 4) | 1999-08-06 | 2000-02-05 | 2000-08-06 | $2000.00 | Window Closed / Lapsed |
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