Patent US3144208A successfully refreshed from Google Patents.
Patent US5478765A successfully refreshed from Google Patents.
US5478765A
Expired / Lapsed
US
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Method of making an ultra thin dielectric for electronic devices
Assignee: Intellectual Ventures Holding 40 LLC
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Filing: 1994-05-04
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Granted: 1995-12-26
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Expires: 2014-05-04
Abstract
Abstract High quality, ultra thin (<30 Å) SiO 2 /Si 3 N 4 (ON) dielectric layers have been fabricated by in situ multiprocessing and low pressure rapid-thermal N 2 O-reoxidation (LRTNO) of Si 3 N 4 films. Si 3 N 4 film was deposited on the RTN-treated polysilicon by rapid-thermal chemical vapor deposition (RT-CVD) using SiH 4 and NH 3 , followed by in situ low pressure rapid-thermal reoxidation in N 2 O (LRTNO) or in O 2 (LRTO) ambient. Results show that ultra thin (T ox ,eq =˜29Å) ON stacked film capacitors with LRTNO have excellent electrical properties and reliability.
Inventors
- 👤 Dim-Lee Kwong
- 👤 Giwan Yoon
- 👤 Jonghan Kim
- 👤 Liang-Kai Han
- 👤 Jiang Yan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:56
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6519; H10P14/6522; H10D; H10D1/00; H10D1/01; H10D1/045; H10D1/047; H10D1/60; H10D1/68; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10P14/63; H10P14/6302; H10P14/6316; H10P14/6322; H10P14/6529; H10P14/66; H10P14/662; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6922; H10P14/6927; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S438/00; Y10S438/954
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
117 words
A method of in situ forming a dielectric layer on a silicon surface of a substrate in an electronic device comprising the steps of a) exposing said silicon surface to an atmosphere of NH 3 at a first elevated temperature for a first period of time to remove native oxides and form a first Si 3 N 4 layer, b) chemical vapor depositing a second Si 3 N 4 layer on said first Si 3 N 4 layer, and c) forming an oxynitride layer on said second Si 3 N 4 layer by heating said second Si 3 N 4 layer at a second temperature for a second period of time in an atmosphere of nitrous oxide.
Claim 2
Independent Claim
117 words
A method of in situ forming a dielectric layer on a silicon surface of a substrate in an electronic device comprising the steps of a) exposing said silicon surface to an atmosphere of NH 3 at a first elevated temperature for a first period of time to remove native oxides and form a first Si 3 N 4 layer, b) chemical vapor depositing a second Si 3 N 4 layer on said first Si 3 N 4 layer, and c) forming an oxynitride layer on said second Si 3 N 4 layer by heating said second Si 3 N 4 layer at a second temperature for a second period of time in an atmosphere of nitrous oxide.
Claim 3
Dependent Claim
28 words
The method as defined by claim 1 wherein step c) is carried out at a pressure of approximately 10 Torr at approximately 1,000° C. for approximately 30 seconds.
Claim 4
Dependent Claim
32 words
The method as defined by claim 2 wherein step b) is carried out in an atmosphere of SiH 4 and NH 3 at a ratio of 1:20 diluted in N 2 .
Claim 5
Dependent Claim
28 words
The method as defined by claim 3 wherein step b) is carried out with a deposition pressure of approximately 1.5 Torr at a temperature of approximately 800° C.
Claim 6
Dependent Claim
20 words
The method as defined by claim 4 wherein step a) is carried out at a temperature of approximately 900° C.
Claim 7
Dependent Claim
32 words
The method as defined by claim 1 wherein step b) is carried out in an atmosphere of SiH 4 and NH 3 at a ratio of 1:20 diluted in N 2 .
Claim 8
Dependent Claim
28 words
The method as defined by claim 6 wherein step b) is carried out with a deposition pressure of approximately 1.5 Torr at a temperature of approximately 800° C.
Claim 9
Dependent Claim
19 words
The method as in claim 7 wherein step a) is carried out at a temperature of approximately 900° C.
Claim 10
Dependent Claim
19 words
The method as in claim 1 wherein step a) is carried out at a temperature of approximately 900° C.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-12-25 | 1999-06-26 | 1999-12-26 | $2000.00 | Window Closed / Lapsed |
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