EP0305741A2
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EP
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Semiconductor device with floating gate
Assignee: Toshiba Corp
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Filing: 1988-07-29
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Granted: —
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Expires: 2008-07-29
Abstract
Abstract A semiconductor device is disclosed, which comprises source and drain regions (21a, 21b) formed in a spaced-apart relation to each other on an isolated semiconductor substrate surface (21), a first conductive layer (24) formed over a channel region between the source and drain regions (21a, 21b) via a gate insulating film (23) and serving as a floating gate electrode, a two-layer insulating film (25, 26) formed on the first conductive layer (24) and consisting of a silicon oxynitride film and a silicon oxide film, and a second conductive layer (27) formed on the two-layer insulating film (25, 26) and serving as a control gate electrode. In the semiconductor device of this structure, the silicon oxynitride film traps less electrons, and electrons are difficultly trapped at the time of data erasing, so that data-erasing characteristics can be improved. Further, since less electrons are trapped, unlike the prior art insulating film utilizing a silicon nitride film, there is no need of providing any silicon oxide film on each side, and with the two-layer structure consisting of the silicon oxynitride film and a silicon oxide film it is possible to obtain sufficient insulation and film thickness reduction.
Inventors
- 👤 Yohichi C/O Patent Division Ohshima
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 17:37
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/40; H10B41/42; H10B41/43; H10B41/48; H10B41/46; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/685; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01346
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
72 words
A semiconductor device, in which a first conductive layer (24) and a second conductive layer (27) are formed above a semiconductor substrate (21) via source and drain regions (21a, 21b) and a gate insulating film (23) formed on the surface of said semiconductor substrate (21), characterized in that a two-layer insulating film consisting of first and second insulating films (25, 26) is formed between said first and second conductive layers (24, 27).
Claim 2
Dependent Claim
72 words
A semiconductor device, in which a first conductive layer (24) and a second conductive layer (27) are formed above a semiconductor substrate (21) via source and drain regions (21a, 21b) and a gate insulating film (23) formed on the surface of said semiconductor substrate (21), characterized in that a two-layer insulating film consisting of first and second insulating films (25, 26) is formed between said first and second conductive layers (24, 27).
Claim 3
Dependent Claim
47 words
The semiconductor device according to claim 1, characterized in that of said two-layer insulating film said first insulating film (25) is formed on said second insulating film (26) and consists of a silicon oxynitride film, and said second insulating film (26) consists of a silicon oxide film.
Claim 4
Dependent Claim
46 words
The semiconductor device according to claim 1, characterized in that of said two-layer insulating film said first insulating film (25) is formed on said second insulating film (26) and consists of silicon oxynitride film, and said second insulating film (26) consists of a silicon oxide film.
Claim 5
Dependent Claim
138 words
A semiconductor device, in which a first transistor as a memory cell transistor and a second transistor as a peripheral circuit transistor are formed on a common semiconductor substrate (21), said first transistor having a structure having a floating gate electrode (24) and a control gate electrode (27), these gate electrodes being formed on a first gate insulating film (23), said second transistor having a structure having a gate electrode (27) formed on a second gate insulating film (26), characterized in that a two-layer insulating film consisting of first and second insulating films (25, 26) is formed between said floating and control gate electrodes (24, 27) of said first transistor, and that said first or second insulating film (25 or 26) and said second gate insulating film (26) of said second transistor are made of the same material.
Claim 6
Dependent Claim
138 words
A semiconductor device, in which a first transistor as a memory cell transistor and a second transistor as a peripheral circuit transistor are formed on a common semiconductor substrate (21), said first transistor having a structure having a floating gate electrode (24) and a control gate electrode (27), these gate electrodes being formed on a first gate insulating film (23), said second transistor having a structure having a gate electrode (27) formed on a second gate insulating film (26), characterized in that a two-layer insulating film consisting of first and second insulating films (25, 26) is formed between said floating and control gate electrodes (24, 27) of said first transistor, and that said first or second insulating film (25 or 26) and said second gate insulating film (26) of said second transistor are made of the same material.
Claim 7
Dependent Claim
21 words
The semiconductor device according to claim 3, characterized in that said first insulating film (25) consists of a silicon oxide film.
Claim 8
Dependent Claim
21 words
The semiconductor device according to claim 3, characterized in that said second insulating film (26) consists of a silicon oxynitride film.
Claim 9
Dependent Claim
134 words
A semiconductor device, in which a first transistor as a memory cell transistor and a second transistor as a peripheral circuit transistor are formed on a common semiconductor substrate, said first transistor having a structure having a floating gate electrode (24) and a control gate electrode (27), these gate electrodes being formed on a a first gate insulating film (23), said second transistor having a structure having a gate electrode (27) formed on a second gate insulating film (25, 26), characterized in that a two-layer insulating film consisting of first and second insulating films (25, 26) is formed between said floating and control gate electrodes (24, 27) of said first transistor, and that said two-layer insulating film and the gate insulating film (25, 26) of said first transistor are made of the same material.
Claim 10
Dependent Claim
134 words
A semiconductor device, in which a first transistor as a memory cell transistor and a second transistor as a peripheral circuit transistor are formed on a common semiconductor substrate, said first transistor having a structure having a floating gate electrode (24) and a control gate electrode (27), these gate electrodes being formed on a a first gate insulating film (23), said second transistor having a structure having a gate electrode (27) formed on a second gate insulating film (25, 26), characterized in that a two-layer insulating film consisting of first and second insulating films (25, 26) is formed between said floating and control gate electrodes (24, 27) of said first transistor, and that said two-layer insulating film and the gate insulating film (25, 26) of said first transistor are made of the same material.
Claim 11
Dependent Claim
49 words
The semiconductor device according to claim 5, characterized in that of said two-layer insulating film said first insulating film (25) is formed under said second insulating film (26) and consists of a silicon oxynitride film, and that said second insulating film (26) is made of a silicon oxide film.
Claim 12
Dependent Claim
47 words
The semiconductor device according to claim 5, characterized in that of said two-layer insulating film said first insulating film (25) is formed on said second insulating film (26) and consists of a silicon nitride film, and said second insulating film (26) consists of a silicon oxide film.
References Cited (Backward Citations)
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