EP0259826A1
Expired / Lapsed
EP
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Semiconductor device having silicon oxynitride film with improved moisture resistance
Assignee: NEC Corp
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Filing: 1987-09-08
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Granted: —
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Expires: 2007-09-08
Abstract
Abstract Disclosed herein is a semiconductor device having an aluminum wiring formed on a semiconductor substrate and a silicon oxynitride film covering the aluminum wiring and having Si, N, O as main elements, atomic ratio of the three elements being expressed by Si x N y O z (where x + y =+ z = 1.00), a range of the atomic ratio lying on lines interconnecting the following eight points in a Si - N - O ternary system or lying inside a region bounded by these lines; (x = 0.51, y = 0.28, z = 0.21) (x = 0.47, y = 0.28, z = 0.25) (x = 0.44, y = 0.31, z = 0.25) (x = 0.41, y = 0.36, z = 0.23) (x = 0.41, y = 0.39, z = 0.20) (x = 0.44, y = 0.38, z = 0.18) (x = 0.46, y = 0.37, z = 0.17) (x = 0.51, y = 0.32, z = 0.17). Preferably, this silicon oxynitride film contains H of 5 to 18 atomic percents.
Inventors
- 👤 Kouji C/O Nec Corporation Yamazaki
- 👤 Hideki C/O Nec Corporation Gomi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 01:55
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10W20/45; H10W20/48; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
218 words
A semiconductor device comprising: a semiconductor substrate having a plurality of circuit regions therein, and insulating film covering the surface of said semiconductor substrate, a metal wiring layer formed on said insulating film, and a silicon oxynitride film covering said metal wiring layer, said silicon oxynitride film containing silicon oxynitride material consisting essentially of the composition which is represented by the formula Si x N y O z , where x, y and z represent a set of atomic ratios and x + y+ z = 1.00, and which falls within the area A - B - C - D - E - F - G - H of Fig. 2 of the drawings or on the lines connecting the vertices of said area, the sets of atomic ratios of the vertices of said area being as follows: A (x = 0.51, y = 0.28, z = 0.21) B (x = 0.47, y = 0.28, z = 0.25) C (x = 0.44, y = 0.31, z = 0.25) D (x = 0.41, y = 0.36, z = 0.23) E (x = 0.41, y = 0.39, z = 0.20) F (x = 0.44, y = 0.38, z = 0.18) G (x = 0.46, y = 0.37, z = 0.17) H (x = 0.51, y = 0.32, z = 0.17).
Claim 2
Dependent Claim
218 words
A semiconductor device comprising: a semiconductor substrate having a plurality of circuit regions therein, and insulating film covering the surface of said semiconductor substrate, a metal wiring layer formed on said insulating film, and a silicon oxynitride film covering said metal wiring layer, said silicon oxynitride film containing silicon oxynitride material consisting essentially of the composition which is represented by the formula Si x N y O z , where x, y and z represent a set of atomic ratios and x + y+ z = 1.00, and which falls within the area A - B - C - D - E - F - G - H of Fig. 2 of the drawings or on the lines connecting the vertices of said area, the sets of atomic ratios of the vertices of said area being as follows: A (x = 0.51, y = 0.28, z = 0.21) B (x = 0.47, y = 0.28, z = 0.25) C (x = 0.44, y = 0.31, z = 0.25) D (x = 0.41, y = 0.36, z = 0.23) E (x = 0.41, y = 0.39, z = 0.20) F (x = 0.44, y = 0.38, z = 0.18) G (x = 0.46, y = 0.37, z = 0.17) H (x = 0.51, y = 0.32, z = 0.17).
Claim 3
Dependent Claim
17 words
The semiconductor device as claimed in claim 1, wherein said metal wiring layer is formed of aluminum.
Claim 4
Dependent Claim
22 words
The semiconductor device as claimed in claim 2, wherein said silicon oxynitride film further contains hydrogen in 5 to 18 atomic %.
Claim 5
Dependent Claim
21 words
The semiconductor device as claimed in claim 2, wherein said metal wiring layer has a width of 2 µm or less.
Claim 6
Independent Claim
169 words
A method of manufacturing a semiconductor device comprising steps of: forming selectively an aluminum wiring layer on a semiconductor substrate covered with an insulating film, and depositing on said aluminum wiring layer, by plasma chemical vapor deposition, a silicon oxynitride film containing Si x N y O z composition (where x, y and z are atomic ratios and x + y + z = 1.00), a range of said atomic ratios lying on line interconnecting the following eight points in a Si - N - O ternary system or lying inside a region bounded by said lines; (x = 0.51, y = 0.28, z = 0.21) (x = 0.47, y = 0.28, z = 0.25) (x = 0.44, y = 0.31, z = 0.25) (x = 0.41, y = 0.36, z = 0.23) (x = 0.41, y = 0.39, z = 0.20) (x = 0.44, y = 0.38, z = 0.18) (x = 0.46, y = 0.37, z = 0.17) (x = 0.51, y = 0.32, z = 0.17).
Claim 7
Independent Claim
169 words
A method of manufacturing a semiconductor device comprising steps of: forming selectively an aluminum wiring layer on a semiconductor substrate covered with an insulating film, and depositing on said aluminum wiring layer, by plasma chemical vapor deposition, a silicon oxynitride film containing Si x N y O z composition (where x, y and z are atomic ratios and x + y + z = 1.00), a range of said atomic ratios lying on line interconnecting the following eight points in a Si - N - O ternary system or lying inside a region bounded by said lines; (x = 0.51, y = 0.28, z = 0.21) (x = 0.47, y = 0.28, z = 0.25) (x = 0.44, y = 0.31, z = 0.25) (x = 0.41, y = 0.36, z = 0.23) (x = 0.41, y = 0.39, z = 0.20) (x = 0.44, y = 0.38, z = 0.18) (x = 0.46, y = 0.37, z = 0.17) (x = 0.51, y = 0.32, z = 0.17).
Claim 8
Dependent Claim
34 words
The method of manufacturing a semiconductor device as claimed in claim 5, wherein SiH₄, NH₃ and N₂O are used as source gases for depositing said silicon oxynitride film by said plasma chemical vapor deposition.
Claim 9
Dependent Claim
182 words
Silicon oxynitride consisting essentially of the Si x N y O z composition and hydrogen, x, y and z representing a set of atomic ratios and x + y + z = 1.00, said Si x N y O z composition falling within the area A - B - C - D - E - F - G - H of Fig. 2 of the drawing or on the lines connecting vertices of said area, the sets of atomic ratios of the vertices of said area being as follows: A (x = 0.51, y = 0.28, z = 0.21) B (x = 0.47, y = 0.28, z = 0.25) C (x = 0.44, y = 0.31, z = 0.25) D (x = 0.41, y = 0.36, z = 0.23) E (x = 0.41, y = 0.39, z = 0.20) F (x = 0.44, y = 0.38, z = 0.18) G (x = 0.46, y = 0.36, z = 0.17) H (x = 0.51, y = 0.32, z = 0.17) and the content of said hydrogen ranging from 5 to 18 atomic %.
Claim 10
Dependent Claim
182 words
Silicon oxynitride consisting essentially of the Si x N y O z composition and hydrogen, x, y and z representing a set of atomic ratios and x + y + z = 1.00, said Si x N y O z composition falling within the area A - B - C - D - E - F - G - H of Fig. 2 of the drawing or on the lines connecting vertices of said area, the sets of atomic ratios of the vertices of said area being as follows: A (x = 0.51, y = 0.28, z = 0.21) B (x = 0.47, y = 0.28, z = 0.25) C (x = 0.44, y = 0.31, z = 0.25) D (x = 0.41, y = 0.36, z = 0.23) E (x = 0.41, y = 0.39, z = 0.20) F (x = 0.44, y = 0.38, z = 0.18) G (x = 0.46, y = 0.36, z = 0.17) H (x = 0.51, y = 0.32, z = 0.17) and the content of said hydrogen ranging from 5 to 18 atomic %.
References Cited (Backward Citations)
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