US5258333A
Expired / Lapsed
US
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Composite dielectric for a semiconductor device and method of fabrication
Assignee: Intel Corp
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Filing: 1992-08-18
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Granted: 1993-11-02
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Expires: 2012-08-18
Abstract
Abstract A high-quality, highly reliable, composite dielectric layer for a semiconductor device. The composite dielectric layer is formed by nitriding a silicon surface, forming an oxide layer on the nitrided silicon surface, and then annealing the nitrided-silicon surface and the oxide in an oxygen ambient.
Inventors
- 👤 Joseph Shappir
- 👤 Ido Rahat
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 16:56
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6519; H10P14/6522; H10P14/63; H10P14/6302; H10P14/6316; H10P14/6322; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/662; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S148/00; Y10S148/112
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
53 words
A method of forming a composite dielectric layer for a semiconductor device comprising the steps of: nitriding a silicon surface; forming an oxide layer on said nitrided silicon surface; oxidizing said oxide layer and said nitrided silicon surface to from said composite dielectric layer; and forming said device on said composite dielectric layer.
Claim 2
Independent Claim
53 words
A method of forming a composite dielectric layer for a semiconductor device comprising the steps of: nitriding a silicon surface; forming an oxide layer on said nitrided silicon surface; oxidizing said oxide layer and said nitrided silicon surface to from said composite dielectric layer; and forming said device on said composite dielectric layer.
Claim 3
Independent Claim
56 words
A method of forming a composite dielectric layer for a semiconductor device on a silicon substrate comprising the steps of: forming a silicon nitride layer on said silicon substrate; forming an oxide layer on said silicon nitride layer; oxidizing said layers to form said composite dielectric layer; and forming said device on said composite dielectric layer.
Claim 4
Independent Claim
56 words
A method of forming a composite dielectric layer for a semiconductor device on a silicon substrate comprising the steps of: forming a silicon nitride layer on said silicon substrate; forming an oxide layer on said silicon nitride layer; oxidizing said layers to form said composite dielectric layer; and forming said device on said composite dielectric layer.
Claim 5
Dependent Claim
25 words
The method of claim 2 further comprising a step of annealing said oxide layer in an N 2 ambient after formation of said oxide layer.
Claim 6
Dependent Claim
33 words
The method of claim 2 further comprising a step of growing a sacrificial oxide layer on said substrate and stripping said sacrificial oxide layer prior to said step of forming silicon nitride layer.
Claim 7
Dependent Claim
22 words
The method of claim 2 wherein said step of forming said silicon nitride layer is a thermal nitridation of said silicon substrate.
Claim 8
Dependent Claim
32 words
The method of claim 5 wherein said thermal nitridation of said silicon substrate is accomplished by exposing said silicon substrate to a pure ammonia or nitrous oxide ambient at a reduced pressure.
Claim 9
Dependent Claim
21 words
The method of claim 2 wherein said step of forming said oxide layer is a CVD deposition of SiO 2 .
Claim 10
Dependent Claim
26 words
The method of claim 7 wherein said CVD deposition of SiO 2 is a high temperature low pressure CVD deposition from nitrous oxide and dichlorosilane sources.
Claim 11
Dependent Claim
15 words
The method of claim 2 wherein said oxidizing step is a dry oxidation with TCA.
Claim 12
Independent Claim
99 words
A method of forming a high quality, highly reliable ULSI manufacturable composite dielectric layer for a semiconductor device formed on a silicon substrate comprising the steps of: thermally growing a silicon nitride layer on said silicon substrate by exposing said silicon substrate to pure ammonia at a reduced pressure; depositing a high temperature oxide layer on said silicon nitride layer by CVD; oxidizing said thermally grown silicon nitride layer and said deposited high temperature oxide layer in an ambient comprising O 2 and TCA to form said composite dielectric layer; and forming said device on said composite dielectric layer.
Claim 13
Independent Claim
99 words
A method of forming a high quality, highly reliable ULSI manufacturable composite dielectric layer for a semiconductor device formed on a silicon substrate comprising the steps of: thermally growing a silicon nitride layer on said silicon substrate by exposing said silicon substrate to pure ammonia at a reduced pressure; depositing a high temperature oxide layer on said silicon nitride layer by CVD; oxidizing said thermally grown silicon nitride layer and said deposited high temperature oxide layer in an ambient comprising O 2 and TCA to form said composite dielectric layer; and forming said device on said composite dielectric layer.
Claim 14
Dependent Claim
20 words
The method of claim 10 wherein said thermally grown silicon nitride layer is grown to less than 30 Å thick.
Claim 15
Dependent Claim
16 words
The method of claim 10 wherein said CVD deposited oxide layer is between 65-165 Å thick.
Claim 16
Dependent Claim
25 words
The method of claim 10 further comprising a step of annealing said substrate in an N 2 ambient at a temperature of approximately 920° C.
Claim 17
Dependent Claim
21 words
The method of claim 10 wherein said step of depositing said high temperature oxide layer is a low pressure CVD deposition.
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