US4188565A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Oxygen atom containing film for a thin-film electroluminescent element
Assignee: Sharp Corp
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Filing: 1978-03-08
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Granted: 1980-02-12
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Expires: 1998-03-08
Abstract
Abstract At least one silicon-oxynitride film is deposited on an electroluminescence layer for providing a uniform and stable dielectric layer for an electroluminescence display panel. The silicon-oxynitride film is deposited using a sputtering technique by mixing a small amount (1 mol%) of nitrous oxide (N 2 O) gas into a sputtering gas such as nitrogen (N 2 ) gas. Oxygen (O 2 ) gas may be substituted for the N 2 O gas mingled within the sputtering gas in the amount of five mol%. A target for sputtering is a pure silicon or sintered Si 3 N 4 plate. An R.F. discharge is provided so that the power flux density on the target becomes several to several ten W. The silicon-oxynitride film is derived by means of the reaction between ion sputtering and the sputtering gas. A dielectric layer is further provided for establishing high reliabiltiy high dielectric properties of the electroluminescence display panel, the dielectric layer being disposed together with the silicon-oxynitride film and being one of the group consisting of Al 2 O 3 , SiO 2 , Ta 2 O 5 , Si 3 N 4 and Y 2 O 3 . The silicon-oxynitride flm which is injected by suitable ions such as P + , H + , He + , Ne + , or Ar + may be further provided as the dielectric layer.
Inventors
- 👤 Etsuo Mizukami
- 👤 Hiroshi Kishishita
- 👤 Masashi Kawaguchi
- 👤 Yoshihiro Endo
- 👤 Kinichi Isaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 12:09
CPC Classifications
H; H05; H05B; H05B33/00; H05B33/12; H05B33/22
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
65 words
A thin-film electroluminescent element comprising: a thin-film electroluminescent layer including a luminescent center; first and second dielectric layers, said electroluminescent layer being disposed between said dielectric layers, at least one of said dielectric layers containing oxygen in the atomic state which provides a bonding force between the dielectric layer and the thin-film electroluminescent layer; and first and second electrodes provided on said dielectric layers, respectively.
Claim 2
Dependent Claim
65 words
A thin-film electroluminescent element comprising: a thin-film electroluminescent layer including a luminescent center; first and second dielectric layers, said electroluminescent layer being disposed between said dielectric layers, at least one of said dielectric layers containing oxygen in the atomic state which provides a bonding force between the dielectric layer and the thin-film electroluminescent layer; and first and second electrodes provided on said dielectric layers, respectively.
Claim 3
Dependent Claim
18 words
The thin-film electroluminescent element according to claim 1, wherein at least one of said dielectric layers is silicon-oxynitride.
Claim 4
Dependent Claim
28 words
The thin-film electroluminescent element according to claim 2, wherein a further dielectric layer different from said silicon-oxynitride layer is provided on at least one of said dielectric layers.
Claim 5
Dependent Claim
37 words
The thin-film electroluminescent element according to claim 3, wherein the further dielectric layer is SiO 2 , Ta 2 O 5 , Al 2 O 3 , Si 3 N 4 or Y 2 O 3 .
Claim 6
Dependent Claim
23 words
The thin-film electroluminescent element according to claim 1, wherein at least one of said dielectric layers is formed directly on said electroluminescent layer.
Claim 7
Dependent Claim
50 words
The thin-film electroluminescent element according to claim 1, wherein at least one of said first and second dielectric layers comprises a silicon-oxynitride film containing a predetermined amount of ions selected from the group consisting of P + , H + , He + , Ne + and Ar + .
Claim 8
Dependent Claim
44 words
The thin-film electroluminescent element according to claim 1, the dielectric layer containing oxygen in the atomic state being produced by sputtering a silicon target with a sputtering gas containing nitrous oxide (N 2 O) gas, oxygen (O 2 ) gas or an oxide gas.
Claim 9
Dependent Claim
27 words
The thin-film electroluminescent element according to claim 7, wherein nitrous oxide gas is mixed within said sputtering gas in an amount of 0.1 to 2.0 mol %.
Claim 10
Dependent Claim
24 words
The thin-film electroluminescent element according to claim 7, wherein oxygen gas is mingled within said sputtering gas in an amount below 5 mol %.
Claim 11
Dependent Claim
28 words
The thin-film electroluminescent element according to claim 1, wherein at least one of said dielectric layers contains oxygen atoms in an amount of 0.1 to 10 atm %.
Claim 12
Dependent Claim
78 words
A thin-film electroluminescent element comprising: a thin-film electroluminescent layer including a luminescent center; first and second dielectric layers, said electroluminescent layer being disposed between said dielectric layers, each of said dielectric layers being composed of two stacked heterogeneous dielectric layers, at least one of said dielectric layers containing oxygen in the atomic state which provides a bonding force between the dielectric layer and the thin-film electroluminescent layer; and first and second electrodes provided on said dielectric layers, respectively.
Claim 13
Dependent Claim
78 words
A thin-film electroluminescent element comprising: a thin-film electroluminescent layer including a luminescent center; first and second dielectric layers, said electroluminescent layer being disposed between said dielectric layers, each of said dielectric layers being composed of two stacked heterogeneous dielectric layers, at least one of said dielectric layers containing oxygen in the atomic state which provides a bonding force between the dielectric layer and the thin-film electroluminescent layer; and first and second electrodes provided on said dielectric layers, respectively.
Claim 14
Dependent Claim
50 words
The thin-film electroluminescent element according to claim 11, wherein the heterogeneous dielectric layers comprise said oxygen-containing layer and a dielectric material selected from the group consisting of SiO 2 , Ta 2 O 5 , Al 2 O 3 , Si 3 N 4 and Y 2 O 3 .
Claim 15
Dependent Claim
14 words
The thin-film electroluminescent element according to claim 11, wherein said oxygen-containing layer is silicon-oxynitride.
Claim 16
Dependent Claim
39 words
The thin-film electroluminescent element according to claim 13, wherein the silicon-oxynitride layer contains a predetermined amount of ions selected from the group consisting of P + , H + , He + , Ne + and Ar + .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-02-11 | 1983-08-13 | 1984-02-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-02-11 | 1987-08-13 | 1988-02-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-02-11 | 1991-08-13 | 1992-02-12 | $7700.00 | Window Closed / Lapsed |