Patent US5198387A successfully refreshed from Google Patents.
US5198387A
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Method and apparatus for in-situ doping of deposited silicon
Assignee: Texas Instruments Inc
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Filing: 1991-08-05
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Granted: 1993-03-30
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Expires: 2011-08-05
Abstract
Abstract A method and apparatus for deposition of an in-situ doped silicon film are disclosed. The deposition may be carried out in an LPCVD reactor, with the temperature of the chamber during deposition preferably closely above the decomposition temperature of silane gas. The preferred dopant source is tertiary butyl phosphine, since the deposition rate of in-situ doped silicon using this source is much greater than that using phosphine as the source, which allows low temperature deposition at reasonable rates. At a temperature of about 560 DEG Celsius, the phosphorous is better incorporated into the deposited film than in films deposited at higher temperatures, which allows the ratio of dopant gas to silane in the chamber to be lower; a low dopant ratio allows improved deposition thickness uniformity. The LPCVD reactor preferably has an injector tube therein which travels a distance within the reactor before its opening, through which the tertiary butyl phosphine passes. This allows the tertiary butyl phosphine to be fully heated, and therefore fully decomposed, prior to its introduction into the chamber. Such full decomposition of the dopant source gas further improves the uniformity of the thickness of the deposited film.
Inventors
- 👤 Thomas E. Tang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 23:54
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10B12/0383; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/455; C23C16/45563; C23C16/45578; H10D; H10D1/00; H10D1/01; H10D1/045; H10D1/047; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2924; H10P14/2925; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/40; H10P14/416; H10P72/00; H10P72/04; H10P72/0431; H10P72/0436; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
111 words
A method for the deposition of a doped a silicon film on a surface, comprising the steps of: a) placing said substrate in a reaction chamber of a reactor; b) heating said substrate to a temperature between about 550 degrees C. and 600 degrees C.; c) introducing silane into said reaction chamber and into contact with said substrate; d) separately preheating a vaporous dopant source above the temperature at which it begins to decompose; and e) then separately introducing the preheated dopant source into said reaction chamber, whereby the dopant mixes with the silane and passes into contact with said substrate, and a doped silicon film is deposited on the substrate.
Claim 2
Independent Claim
111 words
A method for the deposition of a doped a silicon film on a surface, comprising the steps of: a) placing said substrate in a reaction chamber of a reactor; b) heating said substrate to a temperature between about 550 degrees C. and 600 degrees C.; c) introducing silane into said reaction chamber and into contact with said substrate; d) separately preheating a vaporous dopant source above the temperature at which it begins to decompose; and e) then separately introducing the preheated dopant source into said reaction chamber, whereby the dopant mixes with the silane and passes into contact with said substrate, and a doped silicon film is deposited on the substrate.
Claim 3
Independent Claim
125 words
A method for the deposition of a doped a silicon film on a surface, comprising the steps of: a) placing said substrate in a reaction chamber of a reactor; b) heating said reaction chamber and substrate to a temperature between about 550 degrees C. and 600 degrees C.; c) introducing silane into said reaction chamber and in contact with said substrate; d) separately passing a vaporous dopant source through a tube located within said reaction chamber, at a rate slow enough to cause preheating of said dopant source above the temperature at which it begins to decompose; and e) then passing said preheated dopant source into said reaction chamber and into contact with said substrate, whereby a doped silicon film is deposited on the substrate.
Claim 4
Independent Claim
125 words
A method for the deposition of a doped a silicon film on a surface, comprising the steps of: a) placing said substrate in a reaction chamber of a reactor; b) heating said reaction chamber and substrate to a temperature between about 550 degrees C. and 600 degrees C.; c) introducing silane into said reaction chamber and in contact with said substrate; d) separately passing a vaporous dopant source through a tube located within said reaction chamber, at a rate slow enough to cause preheating of said dopant source above the temperature at which it begins to decompose; and e) then passing said preheated dopant source into said reaction chamber and into contact with said substrate, whereby a doped silicon film is deposited on the substrate.
Claim 5
Dependent Claim
31 words
A method as in claim 1 wherein the preheating of said dopant source is continued for a time sufficient to cause substantially complete decomposition thereof prior to contact with said substrate.
Claim 6
Dependent Claim
49 words
A method as in claim 2 further including the step of controlling the flow rate of said dopant source within said tube to ensure that said source is substantially fully decomposed prior to the step of passing the source into the reaction chamber and into contact with the substrate.
Claim 7
Dependent Claim
14 words
A method as in claim 1 wherein said dopant source is tertiary butyl phosphine.
Claim 8
Dependent Claim
18 words
A method as in claim 1 wherein the ratio of dopant source to silane is less than 1%.
Claim 9
Dependent Claim
14 words
A method as in claim 2 wherein said dopant source is tertiary butyl phosphine.
Claim 10
Dependent Claim
18 words
A method as in claim 2 wherein the ratio of dopant source to silane is less than 1%.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-03-29 | 1996-09-28 | 1997-03-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-03-29 | 2000-09-28 | 2001-03-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-03-29 | 2004-09-28 | 2005-03-30 | $7700.00 | Window Closed / Lapsed |