Patent US311324A successfully refreshed from Google Patents.
US4882299A
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Deposition of polysilicon using a remote plasma and in situ generation of UV light.
Assignee: Texas Instruments Inc
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Filing: 1987-11-05
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Granted: 1989-11-21
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Expires: 2007-11-05
Abstract
Abstract A processing apparatus and method for depositing doped or undoped polysilicon on a wafer utilizing a single process chamber to heat the wafer, provide a silicon comtaining gas, and if desired, an appropriate dopant gas to the chamber with the excitation energy being provided by either or both of a remotely generated plasma form and illumination of the wafer with an in situ generated ultraviolet energy.
Inventors
- 👤 Dean W. Freeman
- 👤 James B. Burris
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 14:01
CPC Classifications
B; B05; B05D; B05D1/00; B05D1/62; C; C23; C23C; C23C16/00; C23C16/44; C23C16/448; C23C16/48; C23C16/482; C23C16/50; C23C16/517; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S438/00; Y10S438/905
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
129 words
A method for depositing polysilicon on a wafer comprising; (a) disposing a wafer into a process chamber of a process module; (b) purging the process vacuum process chamber with an appropriate gas; (c) applying a pressure to said chamber less than ambient to maintain said chamber at less than ambient; (d) heating the chamber; (e) generating a remote plasma from a silicon containing and a dopant gas; (f) presenting said remote plasma to a face of said wafer in said chamber; (g) providing a separate flow, within said chamber, of a gas suitable for the production of ultraviolet light; (h) generating an RF power discharge within said separate flow to release ultraviolet energy; and (i) illuminating said face of said wafer with said ultraviolet energy generated inside said module.
Claim 2
Independent Claim
129 words
A method for depositing polysilicon on a wafer comprising; (a) disposing a wafer into a process chamber of a process module; (b) purging the process vacuum process chamber with an appropriate gas; (c) applying a pressure to said chamber less than ambient to maintain said chamber at less than ambient; (d) heating the chamber; (e) generating a remote plasma from a silicon containing and a dopant gas; (f) presenting said remote plasma to a face of said wafer in said chamber; (g) providing a separate flow, within said chamber, of a gas suitable for the production of ultraviolet light; (h) generating an RF power discharge within said separate flow to release ultraviolet energy; and (i) illuminating said face of said wafer with said ultraviolet energy generated inside said module.
Claim 3
Dependent Claim
29 words
The process as set forth in claim 1 wherein the dopant gas is a phosphorous containing gas taken from the group containing; phosphine, phosphorous trichloride, or tertiary butyl phosphine.
Claim 4
Dependent Claim
26 words
The process as set forth in claim 1 wherein the dopant gas is a boron containing gas taken from the group containing; diborane or boron trichloride
Claim 5
Dependent Claim
17 words
The process as set forth in claim 1 wherein the dopant gas is a phosphorous containing gas.
Claim 6
Dependent Claim
17 words
The process as set forth in claim 1 wherein the dopant gas is a boron containing gas.
Claim 7
Dependent Claim
15 words
The process as set forth in claim 1 wherein the silicon containing gas is disilane.
Claim 8
Dependent Claim
15 words
The process as set forth in claim 1 wherein the silicon containing gas is silane.
Claim 9
Independent Claim
100 words
A method for depositing polysilicon on a wafer, comprising the steps of: (a) generating free radicals from a silicon containing gas and a dopant gas in a plasma generating chamber remote from the process chamber; (b) introducing the free radicals to a face of the wafer in the process chamber; (c) providing a separate flow, within said process chamber, of a gas suitable for the production of ultraviolet light; (d) generating an RF power discharge within said separate flow to release ultraviolet energy; and (e) illuminating the face of the wafer with ultraviolet energy which is generated inside the module.
Claim 10
Independent Claim
100 words
A method for depositing polysilicon on a wafer, comprising the steps of: (a) generating free radicals from a silicon containing gas and a dopant gas in a plasma generating chamber remote from the process chamber; (b) introducing the free radicals to a face of the wafer in the process chamber; (c) providing a separate flow, within said process chamber, of a gas suitable for the production of ultraviolet light; (d) generating an RF power discharge within said separate flow to release ultraviolet energy; and (e) illuminating the face of the wafer with ultraviolet energy which is generated inside the module.
Claim 11
Dependent Claim
29 words
The process as set forth in claim 8 wherein the dopant gas is a phosphorous containing gas taken from the group containing phosphine, phosphorous trichloride, or tertiary butyl phosphine.
Claim 12
Dependent Claim
26 words
The process as set forth in claim 8 wherein the dopant gas is a boron containing gas taken from the group containing diborane or boron trichloride.
Claim 13
Dependent Claim
17 words
The process as set forth in claim 8 wherein the dopant gas is a phosphorous containing gas.
Claim 14
Dependent Claim
17 words
The process as set forth in claim 8 wherein the dopant gas is a boron containing gas.
Claim 15
Dependent Claim
15 words
The process as set forth in claim 8 wherein the silicon containing gas is disilane.
Claim 16
Dependent Claim
15 words
The process as set forth in claim 8 wherein the silicon containing gas is silane.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-11-20 | 1993-05-22 | 1993-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-11-20 | 1997-05-22 | 1997-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-11-20 | 2001-05-22 | 2001-11-21 | $7700.00 | Window Closed / Lapsed |