Abstract A process for producing semiconductor grade silicon. Metallurgical grade silicon, silicon dioxide, and silicon tetrafluoride are chemically combined at an elevated temperature to form silicon difluoride gas. The silicon difluoride gas is then polymerized, preferably in a two-step process. An initial small quantity of silicon difluoride polymers is formed at a first temperature. This initial polymerization removes most of the impurities that were present in the original metallurgical grade silicon and which were transported by the silicon difluoride gas. The bulk of the remaining silicon difluoride gas is then polymerized at a second, lower temperature. These polymers are substantially free from all impurities. The pure silicon difluoride polymers are then thermally decomposed at temperatures below 400° C. to form binary silicon fluoride homologues. The homologues can be distilled for even higher purity, or can be used or stored as formed. The binary silicon fluoride homologues produce pure silicon and silicon tetrafluoride when heated to a temperature between 400° C. and 950° C. The disproportionation of the homologues can be accomplished by chemical vapor deposition techniques onto heated substrates of silicon, metal, or quartz. This disproportionation will result in amorphous, polycrystalline, or monocrystalline silicon depending on the temperatures employed and on the substrate used for deposition.
A process for producing pure silicon which comprises the steps of: chemically combining metallurgical grade silicon containing aluminum as an impurity and silicon tetrafluoride in the presence of silicon dioxide at a temperature greater than 1100° C. to form silicon difluoride gas; forming an initial small quantity of polymers of said silicon difluoride gas including impurities present in said metallurgical grade silicon and said silicon difluoride gas at a first temperature between -45° C. and +200° C.; forming an additional quantity of polymers of said silicon difluoride gas at a temperature lower than said first temperature, said additional quantity of polymers being substantially free of impurities present in said metallurgical grade silicon or said silicon difluoride gas; thermally decomposing said additional quantity of polymers by slowly heating in the range from about +100° C. to about +300° C. to form liquid and gaseous binary silicon fluoride homologues; heating said binary silicon fluoride homologues to a temperature between 400° C. and 950° C. to yield said pure silicon.
Claim 2
Dependent Claim
167 words
A process for producing pure silicon which comprises the steps of: chemically combining metallurgical grade silicon containing aluminum as an impurity and silicon tetrafluoride in the presence of silicon dioxide at a temperature greater than 1100° C. to form silicon difluoride gas; forming an initial small quantity of polymers of said silicon difluoride gas including impurities present in said metallurgical grade silicon and said silicon difluoride gas at a first temperature between -45° C. and +200° C.; forming an additional quantity of polymers of said silicon difluoride gas at a temperature lower than said first temperature, said additional quantity of polymers being substantially free of impurities present in said metallurgical grade silicon or said silicon difluoride gas; thermally decomposing said additional quantity of polymers by slowly heating in the range from about +100° C. to about +300° C. to form liquid and gaseous binary silicon fluoride homologues; heating said binary silicon fluoride homologues to a temperature between 400° C. and 950° C. to yield said pure silicon.
Claim 3
Dependent Claim
31 words
The process of claim 1 wherein said step of heating said binary silicon fluoride homologues is accomplished in a substantial vacuum to yield silicon suitable for charging a crystal pulling crucible.
Claim 4
Dependent Claim
49 words
The process of claim 1 wherein said step of heating said binary silicon fluoride homologues is accomplised by contacting said homologues with a substrate heated between about 400° C. and 950° C., said substrate selected from the group consisting of silicon, tungsten, quartz, steel, nickel, iron, carbon and molybdenum.
Claim 5
Dependent Claim
20 words
The process of claim 1 wherein said temperature lower than said first temperature is between -45° C. and -196° C.
Claim 6
Dependent Claim
20 words
The process of claim 1 further comprising the step of distilling said homologues before heating to yield said pure silicon.