US2840588A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the preparation of difluorosilylene and the polymers thereof
Assignee: EIDP Inc
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Filing: 1956-03-22
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Granted: 1958-06-24
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Expires: 1976-03-22
Abstract
No abstract record available.
Inventors
- 👤 Donald C Pease
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 06:49
CPC Classifications
C; C07; C07F; C07F7/00; C07F7/02; C07F7/08; C07F7/12; C07F7/121; C07F7/122; C01; C01B; C01B33/00; C01B33/08; Y; Y10; Y10S; Y10S148/00; Y10S148/049
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
71 words
A PROCESS FOR THE PREPARATION OF DIFLUOROSILYLENE WHICH COMPRISES BRINGING SILICON TETRAFLUORIDE IN CONTACT, AT A TEMPERATURE IN THE RANGE FROM ABOUT 1100*C. TO ABOUT 1400*C. AND AT AN ABSOLUTE PRESSURE OF NOT MORE THAN ABOUT 50 MM. OF MERCURY, WITH A MEMBER OF THE CLASS CONSISTING OF ELEMENTAL SILICON ALLOYS, SILICON CARBIDE, AND THE POLYVALENT METAL SILICIDES AND IMMEDIATELY QUENCHING THE REACTION PRODUCTS TO A TEMPERATURE BELOW ABOUT 0* C.
Claim 2
Dependent Claim
71 words
A PROCESS FOR THE PREPARATION OF DIFLUOROSILYLENE WHICH COMPRISES BRINGING SILICON TETRAFLUORIDE IN CONTACT, AT A TEMPERATURE IN THE RANGE FROM ABOUT 1100*C. TO ABOUT 1400*C. AND AT AN ABSOLUTE PRESSURE OF NOT MORE THAN ABOUT 50 MM. OF MERCURY, WITH A MEMBER OF THE CLASS CONSISTING OF ELEMENTAL SILICON ALLOYS, SILICON CARBIDE, AND THE POLYVALENT METAL SILICIDES AND IMMEDIATELY QUENCHING THE REACTION PRODUCTS TO A TEMPERATURE BELOW ABOUT 0* C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-06-23 | 1961-12-23 | 1962-06-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-06-23 | 1965-12-23 | 1966-06-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-06-23 | 1969-12-23 | 1970-06-24 | $7700.00 | Window Closed / Lapsed |