US4485128A
Expired / Lapsed
US
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Bandgap control in amorphous semiconductors
Assignee: Chronar Corp
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Filing: 1982-01-07
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Granted: 1984-11-27
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Expires: 2002-01-07
Abstract
Abstract Method of producing amorphous semiconductor hydrides (hydrogenated amorphous semiconductors) with specified bandgaps. The desired bandgap is achieved by controlling the temperature and partial pressure of higher order semiconductanes which are created pyrolytically, for example, on a substrate using a hot-wall epitaxial reactor.
Inventors
- 👤 Vikram L. Dalal
- 👤 M. Akhtar
- 👤 Shek-Chung Gau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 09:23
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D62/402; H10D62/80; H10D62/83; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
49 words
The method of producing amorphous semiconductor hydrides with specified bandgaps which comprises creating said hydrides pyrolytically on a substrate which is maintained at a first temperature within a reactor that is in turn maintained at a second temperature, by controlling the temperature and partial pressure of higher order semiconductanes.
Claim 2
Independent Claim
49 words
The method of producing amorphous semiconductor hydrides with specified bandgaps which comprises creating said hydrides pyrolytically on a substrate which is maintained at a first temperature within a reactor that is in turn maintained at a second temperature, by controlling the temperature and partial pressure of higher order semiconductanes.
Claim 3
Dependent Claim
30 words
The method of claim 1 wherein said higher order semiconductanes are maintained at a mean temperature in said reactor in the range from about 300° C. to about 500° C.
Claim 4
Dependent Claim
18 words
The method of claim 1 wherein the temperature of said reactor is different than that of said substrate.
Claim 5
Dependent Claim
19 words
The method of claim 1 wherein the temperature of said reactor is the same as that of said substrate.
Claim 6
Dependent Claim
18 words
The method of claim 1 wherein the temperature of said reactor is greater than that of said substrate.
Claim 7
Dependent Claim
22 words
The method of claim 2 wherein said higher order semiconductances are maintained at a mean temperature in range below about 405° C.
Claim 8
Dependent Claim
14 words
The method of claim 2 wherein said mean temperature varies within a prescribed range.
Claim 9
Dependent Claim
24 words
The method of claim 7 wherein there is a variation in temperature between about 5 percent above and 5 percent below said mean temperature.
Claim 10
Dependent Claim
10 words
The method of claim 1 wherein said semiconductanes are disilanes.
Claim 11
Dependent Claim
12 words
The method of claim 1 wherein said semiconductanes are supplemented by monosemiconductanes.
Claim 12
Dependent Claim
12 words
The method of claim 9 wherein said disilanes are supplemented by monosilanes.
Claim 13
Dependent Claim
16 words
The method of claim 1 wherein said higher order semiconductanes include a plurality of different semiconductanes.
Claim 14
Dependent Claim
14 words
The method of claim 1 wherein said semiconductanes are diluted with an inert gas.
Claim 15
Dependent Claim
22 words
The method of claim 13 wherein said inert gas is selected from the class consisting of argon, helium, neon, xenon and hydrogen.
Claim 16
Dependent Claim
23 words
The method of claim 1 wherein said semiconductor hydrides are selected from the class consisting of silicon and germanium hydrides, and alloys thereof.
Claim 17
Dependent Claim
20 words
The method of claim 1 wherein said semiconductanes are selected from the class consisting of silanes, germanes and mixtures thereof.
Claim 18
Dependent Claim
23 words
The method of claim 1 wherein said semiconductanes are included in a gaseous stream which flows continually into and out of said reactor.
Claim 19
Dependent Claim
17 words
The method of claim 1 wherein said semiconductanes are in a static gaseous atmosphere within said reactor.
Claim 20
Dependent Claim
13 words
The method of claim 1 wherein said semiconductanes are accompanied by a dopant.
Claim 21
Dependent Claim
30 words
The method of claim 19 wherein said dopant is selected from the class consisting of phosphorous trihydride, arsenic trihydride, tin trihydride, phosphorous trichloride, diborane, organometallic alloys of aluminum and gallium.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-11-27 | 1988-05-28 | 1988-11-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-11-27 | 1992-05-28 | 1992-11-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-11-27 | 1996-05-28 | 1996-11-27 | $7700.00 | Window Closed / Lapsed |