US4237151A
Expired / Lapsed
US
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Thermal decomposition of silane to form hydrogenated amorphous Si film
Assignee: United States Department of Energy
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Filing: 1979-06-26
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Granted: 1980-12-02
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Expires: 1999-06-26
Abstract
Abstract This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH4) or other gases comprising H and Si, at elevated temperatures of about 1700 DEG -2300 DEG C., and preferably in a vacuum of about 10-8 to 10-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.
Inventors
- 👤 Myron Strongin
- 👤 Arup K. Ghosh
- 👤 Harold J. Wiesmann
- 👤 Edward B. Rock
- 👤 Harry A. Lutz, III
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 09:43
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
85 words
A method of producing hydrogenated amorphous silicon which comprises thermally decomposing a silicohydride gas in a tungsten tube heated to a temperature of about 1700°-2300° C. and under a vacuum of about 10 -8 to 10 -4 torr to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate situated outside said heated tungsten tube by directing a stream of said gaseous mixture at said substrate, to form a film of hydrogenated amorphous silicon on said substrate.
Claim 2
Independent Claim
85 words
A method of producing hydrogenated amorphous silicon which comprises thermally decomposing a silicohydride gas in a tungsten tube heated to a temperature of about 1700°-2300° C. and under a vacuum of about 10 -8 to 10 -4 torr to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate situated outside said heated tungsten tube by directing a stream of said gaseous mixture at said substrate, to form a film of hydrogenated amorphous silicon on said substrate.
Claim 3
Dependent Claim
12 words
A method in accordance with claim 1, wherein the silicohydride is silane.
Claim 4
Dependent Claim
19 words
A method in accordance with claim 1, wherein the substrate is heated to a temperature less than 500° C.
Claim 5
Dependent Claim
19 words
A method in accordance with claim 1, wherein the substrate is heated to a temperature of about 225°-325° C.
Claim 6
Dependent Claim
25 words
A method in accordance with claim 1, wherein the substrate is a material selected from the group consisting of sapphire, fused quartz and crystal silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-12-02 | 1984-06-02 | 1984-12-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-12-02 | 1988-06-02 | 1988-12-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-12-02 | 1992-06-02 | 1992-12-02 | $7700.00 | Window Closed / Lapsed |